Hydrodynamic simulation of a n^+-n-n^+ silicon nanowire
DOI10.1007/S00161-013-0296-7zbMATH Open1343.82075OpenAlexW2018068080MaRDI QIDQ738065FDOQ738065
Publication date: 15 August 2016
Published in: Continuum Mechanics and Thermodynamics (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1007/s00161-013-0296-7
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- Theoretical foundations for tail electron hydrodynamical models in semiconductors
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- Time step truncation in direct simulation Monte Carlo for semiconductors
Cited In (8)
- Wigner Monte Carlo simulation without discretization error of the tunneling rectangular barrier
- Electrothermal Transport in Silicon Carbide Semiconductors via a Hydrodynamic Model
- Electron transport in silicon nanowires having different cross-sections
- Development of EEM based silicon-water and silica-water wall potentials for non-reactive molecular dynamics simulations
- A benchmark study of the signed-particle Monte Carlo algorithm for the Wigner equation
- A hierarchy of hydrodynamic models for silicon carbide semiconductors
- Non-Parabolic Band Hydrodynamic Model for Silicon Quantum Wires
- An improved 2D-3D model for charge transport based on the maximum entropy principle
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