Hydrodynamic simulation of a n^+-n-n^+ silicon nanowire

DOI10.1007/S00161-013-0296-7MaRDI QIDQ738065zbMATH OpenOpenAlexFDO

Authors O. Muscato, V. Di Stefano

Publication date 15 August 2016

Published in Continuum Mechanics and Thermodynamics (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1007/s00161-013-0296-7

zbMATH Keywords

maximum entropy principlesilicon nanowireshydrodynamic modelSchrödinger-Poisson-Boltzmann system

Mathematics Subject Classification ID

Statistical mechanics of nanostructures and nanoparticles (82D80)

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Cites work

• scientific article; zbMATH DE number 1619362 (Why is no real title available?)
• scientific article; zbMATH DE number 1302036 (Why is no real title available?)
• scientific article; zbMATH DE number 1161505 (Why is no real title available?)
• A variance-reduced electrothermal Monte Carlo method for semiconductor device simulation
• An energy transport model describing heat generation and conduction in silicon semiconductors
• Charge transport in 1D silicon devices via Monte Carlo simulation and Boltzmann‐Poisson solver
• Heat generation and transport in nanoscale semiconductor devices via Monte Carlo and hydrodynamic simulations
• Hydrodynamic modeling of the electro-thermal transport in silicon semiconductors
• Monte Carlo evaluation of the transport coefficients in a n⁺ – n – n⁺ silicon diode
• Numerical simulation of a double-gate MOSFET with a subband model for semiconductors based on the maximum entropy principle
• Numerical study of the systematic error in Monte Carlo schemes for semiconductors
• Properties of the steady state distribution of electrons in semiconductors
• Seebeck effect in silicon semiconductors
• Simulation of Gunn oscillations with a non‐parabolic hydrodynamical model based on the maximum entropy principle
• The Onsager reciprocity principle as a check of consistency for semiconductor carrier transport models
• Theoretical foundations for tail electron hydrodynamical models in semiconductors
• Time step truncation in direct simulation Monte Carlo for semiconductors

Cited in

(11)

• Wigner Monte Carlo simulation without discretization error of the tunneling rectangular barrier
• Thermoelectric effects in silicon quantum wires
• Analysis of a diffusive effective mass model for nanowires
• Electron transport in silicon nanowires having different cross-sections
• Non-Markovian electron dynamics in nanostructures coupled to dissipative contacts
• Development of EEM based silicon-water and silica-water wall potentials for non-reactive molecular dynamics simulations
• A benchmark study of the signed-particle Monte Carlo algorithm for the Wigner equation
• A hierarchy of hydrodynamic models for silicon carbide semiconductors
• Electrothermal transport in silicon carbide semiconductors via a hydrodynamic model
• An improved 2D-3D model for charge transport based on the maximum entropy principle
• Non-Parabolic Band Hydrodynamic Model for Silicon Quantum Wires

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