Monte Carlo evaluation of the transport coefficients in a n+ – n – n+ silicon diode

DOI10.1108/03321640010334613MaRDI QIDQ4519080zbMATH OpenOpenAlexFDO

Authors O. Muscato

Publication date 3 December 2000

Published in COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1108/03321640010334613

zbMATH Keywords

Boltzmann transport equationcarrier transportmoments expansionMonte Carlo simulationsproduction termsrelaxation-time approximationsemiconductor devicessilicon diode

Mathematics Subject Classification ID

Statistical mechanics of semiconductors (82D37)

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Cites work

• Extended Hydrodynamical Model of Carrier Transport in Semiconductors
• Extended thermodynamics tested beyond the linear regime: The case of electron transport in silicon semiconductors
• Thermodynamic derivation of the hydrodynamical model for charge transport in semiconductors

Cited in

(12)

• Semiconductor device simulation using a viscous hydrodynamic model.
• Device benchmark comparisons via kinetic, hydrodynamic, and high-field models
• Electrothermal transport in silicon carbide semiconductors via a hydrodynamic model
• Heat generation in silicon nanometric semiconductor devices
• Heat generation and transport in nanoscale semiconductor devices via Monte Carlo and hydrodynamic simulations
• COMPARATIVE STUDIES OF HYDRODYNAMIC AND ENERGY TRANSPORT MODELS
• Numerical solutions of a viscous‐hydrodynamic model for semiconductors: the supersonic case
• Monte Carlo Simulation of Narrow-Width SOI Devices: Incorporation of the Short Range Coulomb Interaction
• Extended hydrodynamic models and multigrid solver of a silicon diode simulation
• THE MONTE CARLO METHOD APPLIED TO CARRIER TRANSPORT IN Si/SiGe QUANTUM WELLS
• A comparison between different Monte Carlo models in simulation of hole transport in 4H-SiC
• Hydrodynamic simulation of a \(n^{+}-n-n^{+}\) silicon nanowire

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