Monte Carlo evaluation of the transport coefficients in a n+ – n – n+ silicon diode

DOI10.1108/03321640010334613zbMath0977.82054OpenAlexW2164898923MaRDI QIDQ4519080

Orazio Muscato

Publication date: 3 December 2000

Published in: COMPEL - The international journal for computation and mathematics in electrical and electronic engineering (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1108/03321640010334613

zbMATH Keywords

Monte Carlo simulationsBoltzmann transport equationsemiconductor devicesrelaxation-time approximationcarrier transportproduction termsmoments expansionsilicon diode

Mathematics Subject Classification ID

Related Items (6)

Electrothermal Transport in Silicon Carbide Semiconductors via a Hydrodynamic Model ⋮ Heat generation in silicon nanometric semiconductor devices ⋮ Heat generation and transport in nanoscale semiconductor devices via Monte Carlo and hydrodynamic simulations ⋮ Numerical solutions of a viscous‐hydrodynamic model for semiconductors: the supersonic case ⋮ Hydrodynamic simulation of a \(n^{+}-n-n^{+}\) silicon nanowire ⋮ Semiconductor device simulation using a viscous hydrodynamic model.

Cites Work

• Extended thermodynamics tested beyond the linear regime: The case of electron transport in silicon semiconductors
• Thermodynamic derivation of the hydrodynamical model for charge transport in semiconductors
• Extended Hydrodynamical Model of Carrier Transport in Semiconductors

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