Extended Hydrodynamical Model of Carrier Transport in Semiconductors

DOI10.1137/S003613999833294XzbMATH Open0966.35076MaRDI QIDQ4507282FDOQ4507282

Authors: Angelo Marcello Anile, Vittorio Romano, Giovanni Russo 

Publication date: 18 October 2000

Published in: SIAM Journal on Applied Mathematics (Search for Journal in Brave)

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zbMATH Keywords

hyperbolic systemsmaximum entropy principleMonte Carlo simulationsshock-capturingnumerical methods for conservation lawsNessyahu-Tadmor schemehydrodynamical model for charge transport

Mathematics Subject Classification ID

Hyperbolic conservation laws (35L65) Finite difference methods for initial value and initial-boundary value problems involving PDEs (65M06) Motion of charged particles (78A35) Statistical mechanics of semiconductors (82D37)

Cited In (36)

• Thermodynamic derivation of the hydrodynamical model for charge transport in semiconductors
• Hydrodynamical modeling of charge carrier transport in semiconductors
• Asymptotic stability of the equilibrium state for the hydrodynamical model of charge transport in semiconductors based on the maximum entropy principle
• Quantum corrections to the semiclassical hydrodynamical model of semiconductors based on the maximum entropy principle
• Numerical solutions of a viscous‐hydrodynamic model for semiconductors: the supersonic case
• Selected Topics in Approximate Solutions of Nonlinear Conservation Laws. High-Resolution Central Schemes
• Monte Carlo evaluation of the transport coefficients in a n⁺ – n – n⁺ silicon diode
• Nonlinear nonviscous hydrodynamical models for charge transport in the framework of extended thermodynamic methods
• Model Lorentz-like equation with continuous spectrum
• 2D simulation of a silicon MESFET with a nonparabolic hydrodynamical model based on the maximum entropy principle
• A relaxation scheme for the hydrodynamic equations for semiconductors
• Semiconductor device simulation using a viscous hydrodynamic model.
• Simulation of Gunn oscillations with a non‐parabolic hydrodynamical model based on the maximum entropy principle
• Relationships between rational extended thermodynamics and extended irreversible thermodynamics
• A hybrid kinetic/fluid model for solving the gas dynamics Boltzmann-BGK equation
• Linear kinetic heat transfer: moment equations, boundary conditions, and Knudsen layers
• A finite difference scheme solving the Boltzmann-Poisson system for semiconductor devices
• Maximum entropy moment system of the semiconductor Boltzmann equation using Kane's dispersion relation
• Electron-phonon hydrodynamical model for semiconductors
• Global existence for the system of the macroscopic balance equations of charge transport in semiconductors
• A HYDRODYNAMIC MODEL FOR SEMICONDUCTORS WITH FIELD-DEPENDENT MOBILITY
• Mathematical properties of a kinetic transport model for carriers and phonons in semiconductors
• Computational macroscopic approximations to the one-dimensional relaxation-time kinetic system for semiconductors
• Stochastic continuum mechanics -- a thermodynamic-limit-free alternative to statistical mechanics: equilibrium of isothermal ideal isotropic uniform fluid.
• New high-resolution central schemes for nonlinear conservation laws and convection-diffusion equations
• Non-parabolic band hydrodynamical model of silicon semiconductors and simulation of electron devices
• On the modeling and simulation of reaction-transfer dynamics in semiconductor-electrolyte solar cells
• High field fluid dynamical models for the transport of charge carriers in semiconductors
• A splitting scheme based on the space-time CE/SE method for solving multi-dimensional hydrodynamical models of semiconductor devices
• The Onsager reciprocity principle as a check of consistency for semiconductor carrier transport models
• Nonlinear asymptotic stability of the equilibrium state for the MEP model of charge transport in semiconductors
• Extended hydrodynamic models and multigrid solver of a silicon diode simulation
• CROSS-VALIDATION OF NUMERICAL SCHEMES FOR EXTENDED HYDRODYNAMICAL MODELS OF SEMICONDUCTORS
• A WENO-solver for the transients of Boltzmann-Poisson system for semiconductor devices: Performance and comparisons with Monte Carlo methods.
• Asymptotic preserving methods for quasilinear hyperbolic systems with stiff relaxation: a review
• Numerical problems in semiconductor simulation using the hydrodynamic model: a second-order finite difference scheme.

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