Simulation of Gunn oscillations with a non‐parabolic hydrodynamical model based on the maximum entropy principle
From MaRDI portal
Publication:4672394
DOI10.1108/03321640510571039zbMath1071.78031MaRDI QIDQ4672394
Vittorio Romano, Giovanni Mascali
Publication date: 29 April 2005
Published in: COMPEL - The international journal for computation and mathematics in electrical and electronic engineering (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1108/03321640510571039
78M20: Finite difference methods applied to problems in optics and electromagnetic theory
78A99: General topics in optics and electromagnetic theory
Related Items
Simulation of a double-gate MOSFET by a non-parabolic energy-transport subband model for semiconductors based on the maximum entropy principle, An energy transport model describing heat generation and conduction in silicon semiconductors, Hydrodynamic simulation of a \(n^{+}-n-n^{+}\) silicon nanowire, A hydrodynamic model for covalent semiconductors with applications to GaN and SiC, A non parabolic hydrodynamical subband model for semiconductors based on the maximum entropy principle, Numerical simulation of a double-gate MOSFET with a subband model for semiconductors based on the maximum entropy principle
Cites Work
- Unnamed Item
- Non-oscillatory central differencing for hyperbolic conservation laws
- Hydrodynamical model of charge transport in GaAs based on the maximum entropy principle
- Moment closure hierarchies for kinetic theories.
- 2D simulation of a silicon MESFET with a nonparabolic hydrodynamical model based on the maximum entropy principle
- Non parabolic band transport in semiconductors: closure of the moment equations
- Non-parabolic band transport in semiconductors: Closure of the production terms in the moment equations
- Central Schemes for Balance Laws of Relaxation Type
- Non-parabolic band hydrodynamical model of silicon semiconductors and simulation of electron devices
- TRANSIENT SEMICONDUCTOR DEVICE SIMULATION INCLUDING ENERGY BALANCE EQUATION
- Nonoscillatory Central Schemes for Multidimensional Hyperbolic Conservation Laws
- Extended Hydrodynamical Model of Carrier Transport in Semiconductors
- NUMERICAL SOLUTION FOR HYDRODYNAMICAL MODELS OF SEMICONDUCTORS
- On a hierarchy of macroscopic models for semiconductors
- Hydrodynamical modeling of charge carrier transport in semiconductors