TRANSIENT SEMICONDUCTOR DEVICE SIMULATION INCLUDING ENERGY BALANCE EQUATION

DOI10.1108/eb010094zbMath0756.65144OpenAlexW1971699851MaRDI QIDQ4021602

E. D. Lyumkis, A. I. Shur, Paul Visocky, B. S. Pol'Skij

Publication date: 16 January 1993

Published in: COMPEL - The international journal for computation and mathematics in electrical and electronic engineering (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1108/eb010094

zbMATH Keywords

numerical examplesenergy balancecharge transportsemiconductor device simulationVLSI device structuresdrift- diffusion equationshot-carrier transport equationsubmicrometer devices

Mathematics Subject Classification ID

PDEs in connection with optics and electromagnetic theory (35Q60) Technical applications of optics and electromagnetic theory (78A55) Applications to the sciences (65Z05) Numerical solution of discretized equations for boundary value problems involving PDEs (65N22)

Related Items (27)

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Cites Work

• 3D NUMERICAL SIMULATION OF TRANSIENT PROCESSES IN SEMICONDUCTOR DEVICES
• Unnamed Item

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