TRANSIENT SEMICONDUCTOR DEVICE SIMULATION INCLUDING ENERGY BALANCE EQUATION

DOI10.1108/EB010094MaRDI QIDQ4021602zbMATH OpenOpenAlexFDO

Authors E. D. Lyumkis, B. S. Pol'skij, A. I. Shur, Paul Visocky

Publication date 16 January 1993

Published in COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1108/eb010094

zbMATH Keywords

numerical examplescharge transportenergy balancesemiconductor device simulationVLSI device structuresdrift- diffusion equationshot-carrier transport equationsubmicrometer devices

Mathematics Subject Classification ID

Technical applications of optics and electromagnetic theory (78A55) PDEs in connection with optics and electromagnetic theory (35Q60) Numerical solution of discretized equations for boundary value problems involving PDEs (65N22) Applications to the sciences (65Z05)

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Cited in

(33)

• Energy transport in semiconductor devices
• Decay to equilibrium for energy-reaction-diffusion systems
• 2D simulation of a silicon MESFET with a nonparabolic hydrodynamical model based on the maximum entropy principle
• Global existence for the system of the macroscopic balance equations of charge transport in semiconductors
• A hydrodynamical model for holes in silicon semiconductors
• 3D NUMERICAL SIMULATION OF TRANSIENT PROCESSES IN SEMICONDUCTOR DEVICES
• scientific article; zbMATH DE number 665488 (Why is no real title available?)
• Simulation of Gunn oscillations with a non‐parabolic hydrodynamical model based on the maximum entropy principle
• Local-in-time well-posedness of a regularized mathematical model for silicon MESFET
• Study of the jump conditions for the 2D MEP hydrodynamical model of charge transport in semiconductors
• Homogenization of a spherical harmonics expansion model
• Discretization of semiconductor device problems. II
• Linear asymptotic stability of the equilibrium state for the 2-D MEP hydrodynamical model of charge transport in semiconductors
• Exact invariant solutions for a class of energy-transport models of semiconductors in the two dimensional stationary case
• Simulation of THz oscillations in semiconductor devices based on balance equations
• Local discontinuous Galerkin methods for moment models in device simulations: Performance assessment and two-dimensional results
• Asymptotic stability of the stationary solution for a new mathematical model of charge transport in semiconductors
• Nonlinear asymptotic stability of the equilibrium state for the MEP model of charge transport in semiconductors
• Study on a cross diffusion parabolic system
• Detailed formulation of energy balance equations in single quantum well devices
• Regularity of the solution and well-posedness of a mixed problem for an elliptic system with quadratic nonlinearity in gradients
• The solution ofLyumkis energy transport model in semiconductor science
• 2D numerical simulation of the MEP energy-transport model with a finite difference scheme
• A NEW FINITE‐ELEMENT DISCRETIZATION TECHNIQUE FOR THE HYDRODYNAMIC FORMULATION OF ENERGY BALANCE EQUATIONS
• Strong discontinuities for the 2-D MEP hydrodynamical model of charge transport in semiconductors
• Non-parabolic band hydrodynamical model of silicon semiconductors and simulation of electron devices
• 2d numerical simulations of an electron-phonon hydrodynamical model based on the maximum entropy principle
• Exact solutions of a spherically symmetric energy-transport model for semiconductors
• Asymptotic stability of the equilibrium state for the hydrodynamical model of charge transport in semiconductors based on the maximum entropy principle
• Lyapunov functionals, weak sequential stability, and uniqueness analysis for energy-transport systems
• Global existence analysis for degenerate energy-transport models for semiconductors
• Hybrid coupling of a one-dimensional energy-transport Schrödinger system
• Modeling of transient drain current overshoot in polycrystalline silicon thin-film transistors

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