2D numerical simulation of the MEP energy-transport model with a finite difference scheme

From MaRDI portal
Publication:870557


DOI10.1016/j.jcp.2006.06.028zbMath1216.82035MaRDI QIDQ870557

Vittorio Romano

Publication date: 13 March 2007

Published in: Journal of Computational Physics (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1016/j.jcp.2006.06.028


65M06: Finite difference methods for initial value and initial-boundary value problems involving PDEs

82D37: Statistical mechanics of semiconductors

82C70: Transport processes in time-dependent statistical mechanics

76X05: Ionized gas flow in electromagnetic fields; plasmic flow


Related Items

Charge Transport in Graphene including Thermal Effects, On an algorithm for finding the electric potential distribution in the DG-MOSFET transistor, Semiconductor device design using the \textsc{BiMADS} algorithm, Simulation of a double-gate MOSFET by a non-parabolic energy-transport subband model for semiconductors based on the maximum entropy principle, Local-in-time well-posedness of a regularized mathematical model for silicon MESFET, 2d numerical simulations of an electron-phonon hydrodynamical model based on the maximum entropy principle, Group classification of an energy transport model for semiconductors with crystal heating, Modeling and simulation of electronic structure, material interface and random doping in nano-electronic devices, A non parabolic hydrodynamical subband model for semiconductors based on the maximum entropy principle, Numerical simulation of a double-gate MOSFET with a subband model for semiconductors based on the maximum entropy principle, Asymptotic stability of the stationary solution for a new mathematical model of charge transport in semiconductors, Numerical Simulation of a Hydrodynamic Subband Model for Semiconductors Based on the Maximum Entropy Principle, Energy transport in semiconductor devices, A hydrodynamical model for holes in silicon semiconductors, On calculating the electric potential for 2D silicon transistor with a silicon oxide nanochannel, Quantum corrections to the semiclassical hydrodynamical model of semiconductors based on the maximum entropy principle


Uses Software


Cites Work