2D numerical simulation of the MEP energy-transport model with a finite difference scheme

DOI10.1016/j.jcp.2006.06.028zbMath1216.82035OpenAlexW2067040437MaRDI QIDQ870557

Vittorio Romano

Publication date: 13 March 2007

Published in: Journal of Computational Physics (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1016/j.jcp.2006.06.028

zbMATH Keywords

finite differencessemiconductorsMOSFETenergy-transport modelMESFET

Mathematics Subject Classification ID

Finite difference methods for initial value and initial-boundary value problems involving PDEs (65M06) Statistical mechanics of semiconductors (82D37) Transport processes in time-dependent statistical mechanics (82C70) Ionized gas flow in electromagnetic fields; plasmic flow (76X05)

Related Items (22)

Asymptotic stability of the stationary solution for a new mathematical model of charge transport in semiconductors ⋮ Numerical Simulation of a Hydrodynamic Subband Model for Semiconductors Based on the Maximum Entropy Principle ⋮ Optimal Control for Semiconductor Diode Design based on the MEP Energy-Transport Model ⋮ Energy transport in semiconductor devices ⋮ Charge Transport in Graphene including Thermal Effects ⋮ A non parabolic hydrodynamical subband model for semiconductors based on the maximum entropy principle ⋮ Semiconductor device design using the \textsc{BiMADS} algorithm ⋮ Numerical simulation of a double-gate MOSFET with a subband model for semiconductors based on the maximum entropy principle ⋮ An improved 2D-3D model for charge transport based on the maximum entropy principle ⋮ Numerical Schemes for Semiconductors Energy-Transport Models ⋮ A hydrodynamical model for holes in silicon semiconductors ⋮ Local-in-time well-posedness of a regularized mathematical model for silicon MESFET ⋮ Simulation of a double-gate MOSFET by a non-parabolic energy-transport subband model for semiconductors based on the maximum entropy principle ⋮ 2d numerical simulations of an electron-phonon hydrodynamical model based on the maximum entropy principle ⋮ Quantum corrections to the semiclassical hydrodynamical model of semiconductors based on the maximum entropy principle ⋮ On an algorithm for finding the electric potential distribution in the DG-MOSFET transistor ⋮ A new approach to numerical simulation of charge transport in double gate-MOSFET ⋮ Modeling and simulation of electronic structure, material interface and random doping in nano-electronic devices ⋮ Analysis of numerical schemes for semiconductor energy-transport models ⋮ On calculating the electric potential for 2D silicon transistor with a silicon oxide nanochannel ⋮ Group classification of an energy transport model for semiconductors with crystal heating ⋮ Numerical analysis of DDFV schemes for semiconductors energy-transport models

Uses Software

• WENO

Cites Work

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• An energy-transport model for semiconductors derived from the Boltzmann equation.
• 2D simulation of a silicon MESFET with a nonparabolic hydrodynamical model based on the maximum entropy principle
• Numerical discretization of energy-transport model for semiconductors using high-order compact schemes
• Quasi-hydrodynamic semiconductor equations
• A WENO-solver for the transients of Boltzmann-Poisson system for semiconductor devices: Performance and comparisons with Monte Carlo methods.
• Non parabolic band transport in semiconductors: closure of the moment equations
• Non-parabolic band transport in semiconductors: Closure of the production terms in the moment equations
• Asymptotic behavior at the boundary of a semiconductor device in two space dimensions
• Non-parabolic band hydrodynamical model of silicon semiconductors and simulation of electron devices
• TRANSIENT SEMICONDUCTOR DEVICE SIMULATION INCLUDING ENERGY BALANCE EQUATION
• A Mixed Finite-Element Discretization of the Energy-Transport Model for Semiconductors
• Numerical Discretization of Energy-Transport Models for Semiconductors with Nonparabolic Band Structure
• An Adaptive Mixed Scheme for Energy-Transport Simulations of Field-Effect Transistors
• AN ENTROPY-BASED FINITE DIFFERENCE METHOD FOR THE ENERGY TRANSPORT SYSTEM
• On a hierarchy of macroscopic models for semiconductors
• NEW MIXED FINITE ELEMENT SCHEMES FOR CURRENT CONTINUITY EQUATIONS

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