2D numerical simulation of the MEP energy-transport model with a finite difference scheme
From MaRDI portal
Publication:870557
DOI10.1016/j.jcp.2006.06.028zbMath1216.82035MaRDI QIDQ870557
Publication date: 13 March 2007
Published in: Journal of Computational Physics (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1016/j.jcp.2006.06.028
65M06: Finite difference methods for initial value and initial-boundary value problems involving PDEs
82D37: Statistical mechanics of semiconductors
82C70: Transport processes in time-dependent statistical mechanics
76X05: Ionized gas flow in electromagnetic fields; plasmic flow
Related Items
Charge Transport in Graphene including Thermal Effects, On an algorithm for finding the electric potential distribution in the DG-MOSFET transistor, Semiconductor device design using the \textsc{BiMADS} algorithm, Simulation of a double-gate MOSFET by a non-parabolic energy-transport subband model for semiconductors based on the maximum entropy principle, Local-in-time well-posedness of a regularized mathematical model for silicon MESFET, 2d numerical simulations of an electron-phonon hydrodynamical model based on the maximum entropy principle, Group classification of an energy transport model for semiconductors with crystal heating, Modeling and simulation of electronic structure, material interface and random doping in nano-electronic devices, A non parabolic hydrodynamical subband model for semiconductors based on the maximum entropy principle, Numerical simulation of a double-gate MOSFET with a subband model for semiconductors based on the maximum entropy principle, Asymptotic stability of the stationary solution for a new mathematical model of charge transport in semiconductors, Numerical Simulation of a Hydrodynamic Subband Model for Semiconductors Based on the Maximum Entropy Principle, Energy transport in semiconductor devices, A hydrodynamical model for holes in silicon semiconductors, On calculating the electric potential for 2D silicon transistor with a silicon oxide nanochannel, Quantum corrections to the semiclassical hydrodynamical model of semiconductors based on the maximum entropy principle
Uses Software
Cites Work
- An energy-transport model for semiconductors derived from the Boltzmann equation.
- 2D simulation of a silicon MESFET with a nonparabolic hydrodynamical model based on the maximum entropy principle
- Numerical discretization of energy-transport model for semiconductors using high-order compact schemes
- Quasi-hydrodynamic semiconductor equations
- A WENO-solver for the transients of Boltzmann-Poisson system for semiconductor devices: Performance and comparisons with Monte Carlo methods.
- Non parabolic band transport in semiconductors: closure of the moment equations
- Non-parabolic band transport in semiconductors: Closure of the production terms in the moment equations
- Asymptotic behavior at the boundary of a semiconductor device in two space dimensions
- Non-parabolic band hydrodynamical model of silicon semiconductors and simulation of electron devices
- TRANSIENT SEMICONDUCTOR DEVICE SIMULATION INCLUDING ENERGY BALANCE EQUATION
- A Mixed Finite-Element Discretization of the Energy-Transport Model for Semiconductors
- Numerical Discretization of Energy-Transport Models for Semiconductors with Nonparabolic Band Structure
- An Adaptive Mixed Scheme for Energy-Transport Simulations of Field-Effect Transistors
- AN ENTROPY-BASED FINITE DIFFERENCE METHOD FOR THE ENERGY TRANSPORT SYSTEM
- On a hierarchy of macroscopic models for semiconductors
- NEW MIXED FINITE ELEMENT SCHEMES FOR CURRENT CONTINUITY EQUATIONS
- Unnamed Item
- Unnamed Item
- Unnamed Item
- Unnamed Item
- Unnamed Item
- Unnamed Item
- Unnamed Item