scientific article; zbMATH DE number 1190386
From MaRDI portal
Publication:3840935
Recommendations
- scientific article; zbMATH DE number 687001
- scientific article; zbMATH DE number 4110040
- ENERGY‐MOMENTUM TRANSPORT MODEL SUITABLE FOR SMALL GEOMETRY SILICON DEVICE SIMULATION
- Charge transport in low dimensional semiconductor structures. The maximum entropy approach
- scientific article; zbMATH DE number 108361
Cited in
(8)- Recovering doping profiles in semiconductor devices with the Boltzmann-Poisson model
- 2D numerical simulation of the MEP energy-transport model with a finite difference scheme
- scientific article; zbMATH DE number 444441 (Why is no real title available?)
- Optimal Control for Semiconductor Diode Design based on the MEP Energy-Transport Model
- scientific article; zbMATH DE number 1967753 (Why is no real title available?)
- On the modeling and simulation of reaction-transfer dynamics in semiconductor-electrolyte solar cells
- scientific article; zbMATH DE number 687001 (Why is no real title available?)
- An iterative method for adaptive finite element solutions of an energy transport model of semiconductor devices
This page was built for publication:
Report a bug (only for logged in users!)Click here to report a bug for this page (MaRDI item Q3840935)