scientific article; zbMATH DE number 1190386
From MaRDI portal
Publication:3840935
zbMATH Open0913.76001MaRDI QIDQ3840935FDOQ3840935
Authors: Andreas Schenk
Publication date: 16 August 1998
Title of this publication is not available (Why is that?)
Recommendations
- scientific article; zbMATH DE number 687001
- scientific article; zbMATH DE number 4110040
- ENERGY‐MOMENTUM TRANSPORT MODEL SUITABLE FOR SMALL GEOMETRY SILICON DEVICE SIMULATION
- Charge transport in low dimensional semiconductor structures. The maximum entropy approach
- scientific article; zbMATH DE number 108361
microscopic levelmoments of Boltzmann equationnumeric simulationsphysics based modelssilicon devicetaylored quantum mechanics
Rarefied gas flows, Boltzmann equation in fluid mechanics (76P05) Research exposition (monographs, survey articles) pertaining to fluid mechanics (76-02) Applications of statistical mechanics to specific types of physical systems (82D99)
Cited In (8)
- Recovering doping profiles in semiconductor devices with the Boltzmann-Poisson model
- 2D numerical simulation of the MEP energy-transport model with a finite difference scheme
- Title not available (Why is that?)
- Optimal Control for Semiconductor Diode Design based on the MEP Energy-Transport Model
- Title not available (Why is that?)
- On the modeling and simulation of reaction-transfer dynamics in semiconductor-electrolyte solar cells
- Title not available (Why is that?)
- An iterative method for adaptive finite element solutions of an energy transport model of semiconductor devices
This page was built for publication:
Report a bug (only for logged in users!)Click here to report a bug for this page (MaRDI item Q3840935)