Recovering doping profiles in semiconductor devices with the Boltzmann-Poisson model
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Publication:543757
DOI10.1016/j.jcp.2011.01.034zbMath1220.82099OpenAlexW2006556102MaRDI QIDQ543757
Yingda Cheng, Kui Ren, Irene Martínez Gamba
Publication date: 17 June 2011
Published in: Journal of Computational Physics (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1016/j.jcp.2011.01.034
inverse problemsparameter identificationdrift-diffusionBoltzmann-Poisson systemdoping profilesemiconductor devicesinverse doping
Statistical mechanics of semiconductors (82D37) Transport processes in time-dependent statistical mechanics (82C70)
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Uses Software
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