2D semiconductor device simulations by WENO-Boltzmann schemes: efficiency, boundary conditions and comparison to Monte Carlo methods
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Publication:2490272
DOI10.1016/j.jcp.2005.09.005zbMath1098.82033OpenAlexW2098149614MaRDI QIDQ2490272
Chi-Wang Shu, Armando Majorana, José Antonio Carrillo, Irene Martínez Gamba
Publication date: 28 April 2006
Published in: Journal of Computational Physics (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1016/j.jcp.2005.09.005
Boltzmann transport equationMOSFETMESFETDirect Monte Carlo simulationSemiconductor device simulationWeighted essentially non-oscillatory schemes
Statistical mechanics of semiconductors (82D37) Transport processes in time-dependent statistical mechanics (82C70)
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Uses Software
Cites Work
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