Asymptotic behavior at the boundary of a semiconductor device in two space dimensions

DOI10.1007/BF01759016zbMath0791.35012MaRDI QIDQ2367504

Irene Martínez Gamba

Publication date: 16 August 1993

Published in: Annali di Matematica Pura ed Applicata. Serie Quarta (Search for Journal in Brave)

zbMATH Keywords

quasilinear parabolic equationsmixed boundary conditionssemiconductor deviceoptimal regularityasymptotic behavior at the singular pointselliptic equation in non-convex domainsystem of elliptic-parabolic equationstwo-dimensional non-convex domain with corners

Mathematics Subject Classification ID

Asymptotic behavior of solutions to PDEs (35B40) Nonlinear initial, boundary and initial-boundary value problems for linear parabolic equations (35K60) PDEs with low regular coefficients and/or low regular data (35R05) Asymptotic expansions of solutions to PDEs (35C20) Motion of charged particles (78A35)

Related Items

2D numerical simulation of the MEP energy-transport model with a finite difference scheme ⋮ Behavior of the potential at the pn-junction for a model in semiconductor theory ⋮ 2D semiconductor device simulations by WENO-Boltzmann schemes: efficiency, boundary conditions and comparison to Monte Carlo methods

Cites Work

• Unnamed Item
• Unnamed Item
• Unnamed Item
• Unnamed Item
• Unnamed Item
• Unnamed Item
• Evolution systems in semiconductor device modeling: A cyclic uncoupled line analysis for the gummel map
• Uniform Asymptotic Representation of Solutions of the Basic Semiconductor-Device Equations