The Asymptotic form of the solution of the Poisson equation in a model of a three-dimensional semiconductor structure

MaRDI QIDQ1802638zbMATH OpenFDO

Authors Leonid V. Kalachev, I. A. Obukhov

Publication date 6 September 1993

Published in Computational Mathematics and Mathematical Physics (Search for Journal in Brave)

zbMATH Keywords

drift-diffusion modelparallelepipedboundary-layer functionssingularly perturbed Poisson equation

Mathematics Subject Classification ID

Technical applications of optics and electromagnetic theory (78A55) Laplace operator, Helmholtz equation (reduced wave equation), Poisson equation (35J05) Asymptotic expansions of solutions to PDEs (35C20)

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(7)

• Representation of the solution to a model problem in semiconductor physics
• scientific article; zbMATH DE number 4106228 (Why is no real title available?)
• Application of the homotopy analysis method to the Poisson-Boltzmann equation for semiconductor devices
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• Integration of Poisson Equation for the Diamond-Structure Semiconductors by the Green Function Cellular Method (GFCM)
• On an asymptotic formula for the maximum voltage drop in a on-chip power distribution network
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