The Asymptotic form of the solution of the Poisson equation in a model of a three-dimensional semiconductor structure

zbMATH Open0778.35026MaRDI QIDQ1802638FDOQ1802638

Authors: Leonid V. Kalachev, I. A. Obukhov 

Publication date: 6 September 1993

Published in: Computational Mathematics and Mathematical Physics (Search for Journal in Brave)

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zbMATH Keywords

drift-diffusion modelparallelepipedboundary-layer functionssingularly perturbed Poisson equation

Mathematics Subject Classification ID

Technical applications of optics and electromagnetic theory (78A55) Laplace operator, Helmholtz equation (reduced wave equation), Poisson equation (35J05) Asymptotic expansions of solutions to PDEs (35C20)

Cited In (7)

• Representation of the solution to a model problem in semiconductor physics
• Title not available (Why is that?)
• Application of the homotopy analysis method to the Poisson-Boltzmann equation for semiconductor devices
• Title not available (Why is that?)
• Integration of Poisson Equation for the Diamond-Structure Semiconductors by the Green Function Cellular Method (GFCM)
• On an asymptotic formula for the maximum voltage drop in a on-chip power distribution network
• Title not available (Why is that?)

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