Efficient solution of the Schrödinger-Poisson equations in layered semiconductor devices

DOI10.1016/J.JCP.2009.03.037MaRDI QIDQ2390425zbMATH OpenOpenAlexFDO

Authors Christopher Anderson

Publication date 22 July 2009

Published in Journal of Computational Physics (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1016/j.jcp.2009.03.037

zbMATH Keywords

quantum dotselectronic structurecomputational nano-technologySchrödinger-Poisson

Mathematics Subject Classification ID

Schrödinger operator, Schrödinger equation (35J10) Multistep, Runge-Kutta and extrapolation methods for ordinary differential equations (65L06) Finite difference methods for boundary value problems involving PDEs (65N06) Statistical mechanics of semiconductors (82D37)

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Cites work

• scientific article; zbMATH DE number 3659161 (Why is no real title available?)
• scientific article; zbMATH DE number 1049353 (Why is no real title available?)
• A Fourier--Wachspress method for solving Helmholtz's equation in three-dimensional layered domains
• LAPACK Users' Guide
• Modeling, Design, and Optimization of a Solid State Electron Spin Qubit
• Self-consistent-field calculations using Chebyshev-filtered subspace iteration
• State-of-the-art eigensolvers for electronic structure calculations of large scale nano-systems

Cited in

(13)

• The Asymptotic form of the solution of the Poisson equation in a model of a three-dimensional semiconductor structure
• Simulation of Si n-MOS inversion layer with Schrödinger-Poisson equivalent circuit model
• Large-Scale Scientific Computing
• scientific article; zbMATH DE number 4106228 (Why is no real title available?)
• A discrete geometric approach to solving time independent Schrödinger equation
• Solution of the 1D Schrödinger equation in semiconductor heterostructures using the immersed interface method
• Isospectral measures
• A numerical iterative method for solving Schrödinger and Poisson equations in nanoscale single, double and surrounding gate metal-oxide-semiconductor structures
• Efficient Numerical Solution of the 3-D Semiconductor Poisson Equation for {Monte Carlo} Device Simulation
• Complementary geometric formulations for electrostatics
• A Rayleigh-Chebyshev procedure for finding the smallest eigenvalues and associated eigenvectors of large sparse Hermitian matrices
• An improved shooting approach for solving the time-independent Schrödinger equation for III/V QW structures
• Modeling and simulation of electronic structure, material interface and random doping in nano-electronic devices

Describes a project that uses

Uses Software

• LAPACK
• FFTW

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