Efficient solution of the Schrödinger-Poisson equations in layered semiconductor devices
DOI10.1016/J.JCP.2009.03.037zbMATH Open1169.82020OpenAlexW2038376011MaRDI QIDQ2390425FDOQ2390425
Authors: Christopher Anderson 
Publication date: 22 July 2009
Published in: Journal of Computational Physics (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1016/j.jcp.2009.03.037
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Cites Work
- LAPACK Users' Guide
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- Self-consistent-field calculations using Chebyshev-filtered subspace iteration
- State-of-the-art eigensolvers for electronic structure calculations of large scale nano-systems
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- A Fourier--Wachspress method for solving Helmholtz's equation in three-dimensional layered domains
- Modeling, Design, and Optimization of a Solid State Electron Spin Qubit
Cited In (13)
- Title not available (Why is that?)
- Solution of the 1D Schrödinger equation in semiconductor heterostructures using the immersed interface method
- A Rayleigh-Chebyshev procedure for finding the smallest eigenvalues and associated eigenvectors of large sparse Hermitian matrices
- A numerical iterative method for solving Schrödinger and Poisson equations in nanoscale single, double and surrounding gate metal-oxide-semiconductor structures
- An improved shooting approach for solving the time-independent Schrödinger equation for III/V QW structures
- Simulation of Si n-MOS inversion layer with Schrödinger-Poisson equivalent circuit model
- The Asymptotic form of the solution of the Poisson equation in a model of a three-dimensional semiconductor structure
- Large-Scale Scientific Computing
- Efficient Numerical Solution of the 3-D Semiconductor Poisson Equation for {Monte Carlo} Device Simulation
- A discrete geometric approach to solving time independent Schrödinger equation
- Modeling and simulation of electronic structure, material interface and random doping in nano-electronic devices
- Complementary geometric formulations for electrostatics
- Isospectral measures
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