Modeling and simulation of electronic structure, material interface and random doping in nano-electronic devices
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Publication:975119
mathematical modelingMOSFETquantum effectsinterface modelrandom dopantnano-electronic devicePoisson-Schrödinger equations
NLS equations (nonlinear Schrödinger equations) (35Q55) Interface problems; diffusion-limited aggregation arising in equilibrium statistical mechanics (82B24) Transport processes in time-dependent statistical mechanics (82C70) Statistical mechanics of semiconductors (82D37) Statistical mechanics of nanostructures and nanoparticles (82D80)
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Cited in
(21)- A three-dimensional Monte Carlo model for the simulation of nanoelectronic devices
- High-order fractional partial differential equation transform for molecular surface construction
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- Numerical study on two-dimensional micro-channel flows using the gas-kinetic unified algorithm
- Partial differential equation transform -- variational formulation and Fourier analysis
- Modeling and computation of heterogeneous implicit solvent and its applications for biomolecules
- Quantum hydrodynamic simulation of discrete-dopant fluctuated physical quantities in nanoscale FinFET
- A new mathematical interpretation of disordered nanoscale material systems for computational modelling
- Impact of geometric, thermal and tunneling effects on nano-transistors
- An adaptive multilevel Monte Carlo algorithm for the stochastic drift-diffusion-Poisson system
- MIB Galerkin method for elliptic interface problems
- Modeling and computation of heterogeneous implicit solvent and its applications for biomolecules
- A Galerkin formulation of the MIB method for three dimensional elliptic interface problems
- Quantum dynamics in continuum for proton transport. II: Variational solvent-solute interface
- Gigahertz nanomechanical oscillators based on ions inside cyclic peptide nanotubes: a continuum study
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- Nanoionics from a quantum mechanics point of view: mathematical modeling and numerical simulation
- Optimal multilevel randomized quasi-Monte-Carlo method for the stochastic drift-diffusion-Poisson system
- Simulation of a double-gate MOSFET by a non-parabolic energy-transport subband model for semiconductors based on the maximum entropy principle
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