Modeling and simulation of electronic structure, material interface and random doping in nano-electronic devices

DOI10.1016/j.jcp.2010.02.002zbMath1191.82113OpenAlexW2022615719WikidataQ39982367 ScholiaQ39982367MaRDI QIDQ975119

Duan Chen, Guo-Wei Wei

Publication date: 8 June 2010

Published in: Journal of Computational Physics (Search for Journal in Brave)

Full work available at URL: http://europepmc.org/articles/pmc2852905

zbMATH Keywords

interface modelmathematical modelingMOSFETquantum effectsrandom dopantnano-electronic devicePoisson-Schrödinger equations

Mathematics Subject Classification ID

NLS equations (nonlinear Schrödinger equations) (35Q55) Statistical mechanics of semiconductors (82D37) Interface problems; diffusion-limited aggregation arising in equilibrium statistical mechanics (82B24) Transport processes in time-dependent statistical mechanics (82C70) Statistical mechanics of nanostructures and nanoparticles (82D80)

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