Modeling and simulation of electronic structure, material interface and random doping in nano-electronic devices
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Publication:975119
DOI10.1016/J.JCP.2010.02.002zbMATH Open1191.82113OpenAlexW2022615719WikidataQ39982367 ScholiaQ39982367MaRDI QIDQ975119FDOQ975119
Publication date: 8 June 2010
Published in: Journal of Computational Physics (Search for Journal in Brave)
Full work available at URL: http://europepmc.org/articles/pmc2852905
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mathematical modelingMOSFETquantum effectsinterface modelrandom dopantnano-electronic devicePoisson-Schrödinger equations
NLS equations (nonlinear Schrödinger equations) (35Q55) Interface problems; diffusion-limited aggregation arising in equilibrium statistical mechanics (82B24) Transport processes in time-dependent statistical mechanics (82C70) Statistical mechanics of semiconductors (82D37) Statistical mechanics of nanostructures and nanoparticles (82D80)
Cites Work
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Cited In (20)
- Quantum dynamics in continuum for proton transport. II: Variational solvent-solute interface
- Quantum hydrodynamic simulation of discrete-dopant fluctuated physical quantities in nanoscale FinFET
- Partial differential equation transform -- variational formulation and Fourier analysis
- An adaptive multilevel Monte Carlo algorithm for the stochastic drift-diffusion-Poisson system
- Finite volume formulation of the MIB method for elliptic interface problems
- Optimal multilevel randomized quasi-Monte-Carlo method for the stochastic drift-diffusion-Poisson system
- Title not available (Why is that?)
- High-order fractional partial differential equation transform for molecular surface construction
- Simulation of a double-gate MOSFET by a non-parabolic energy-transport subband model for semiconductors based on the maximum entropy principle
- Modeling and computation of heterogeneous implicit solvent and its applications for biomolecules
- A non parabolic hydrodynamical subband model for semiconductors based on the maximum entropy principle
- Numerical simulation of a double-gate MOSFET with a subband model for semiconductors based on the maximum entropy principle
- Impact of geometric, thermal and tunneling effects on nano-transistors
- MIB Galerkin method for elliptic interface problems
- Modeling and computation of heterogeneous implicit solvent and its applications for biomolecules
- A Galerkin formulation of the MIB method for three dimensional elliptic interface problems
- A three-dimensional Monte Carlo model for the simulation of nanoelectronic devices
- Numerical Study on Two-Dimensional Micro-Channel Flows Using the Gas-Kinetic Unified Algorithm
- Gigahertz nanomechanical oscillators based on ions inside cyclic peptide nanotubes: a continuum study
- A new mathematical interpretation of disordered nanoscale material systems for computational modelling
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