A coupled Schrödinger drift-diffusion model for quantum semiconductor device simulations
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Publication:1851269
DOI10.1006/jcph.2002.7122zbMath1008.82033OpenAlexW2086729828MaRDI QIDQ1851269
Publication date: 16 December 2002
Published in: Journal of Computational Physics (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1006/jcph.2002.7122
resonant tunneling diodecoupled Schrödinger drift-diffusion modelquantum semiconductor device simulations
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- Erratum
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- Coupling one-dimensional time-dependent classical and quantum transport models
- SECOND ORDER BOUNDARY CONDITIONS FOR THE DRIFT-DIFFUSION EQUATIONS OF SEMICONDUCTORS
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