On a hierarchy of macroscopic models for semiconductors

DOI10.1063/1.531567zbMATH Open0868.45006OpenAlexW2035610195MaRDI QIDQ5284790FDOQ5284790

Authors: Naoufel Ben Abdallah, Pierre Degond 

Publication date: 17 August 1997

Published in: Journal of Mathematical Physics (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1063/1.531567

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zbMATH Keywords

asymptoticsBoltzmann equationdiffusion limitdrift-diffusion modelsemiconductorrelaxation limitspherical harmonic expansion model

Mathematics Subject Classification ID

Technical applications of optics and electromagnetic theory (78A55) Integro-partial differential equations (45K05) Rarefied gas flows, Boltzmann equation in fluid mechanics (76P05) Transport processes in time-dependent statistical mechanics (82C70) Asymptotics of solutions to integral equations (45M05)

Cites Work

• Theory of the flow of electrons and holes in Germanium and other semiconductors
• Space homogeneous solutions of the Boltzmann equation describing electron-phonon interactions in semiconductors
• Multidimensional spherical harmonics expansion of Boltzmann equation for transport in semiconductors
• High electric field approximation to charge transport in semiconductor devices
• COMPARATIVE STUDIES OF HYDRODYNAMIC AND ENERGY TRANSPORT MODELS
• Conservation laws from the Boltzmann equation describing electron-phonon interactions in semiconductors
• The influence of interelectronic collisions on conduction and breakdown in covalent semi-conductors
• The influence of interelectronic collisions on conduction and breakdown in polar crystals

Cited In (only showing first 100 items - show all)

• Macroscopic models for semiconductor heterostructures
• THE HIGH FIELD ASYMPTOTICS FOR DEGENERATE SEMICONDUCTORS
• On spherical harmonics expansion type modelsfor electron–phonon collisions
• Semiconductor device design using the \textsc{BiMADS} algorithm
• Discrete version of the SHE asymptotics: multigroup neutron transport equations
• On quantum extensions to classical spherical harmonics expansion/Fokker-Planck models
• Asymptotic stability of the equilibrium state for the hydrodynamical model of charge transport in semiconductors based on the maximum entropy principle
• Homogenization of a spherical harmonics expansion model
• Large time behavior and energy relaxation time limit of the solutions to an energy transport model in semiconductors
• Linear asymptotic stability of the equilibrium state for the 2-D MEP hydrodynamical model of charge transport in semiconductors
• AN INFINITE SYSTEM OF DIFFUSION EQUATIONS ARISING IN TRANSPORT THEORY: THE COUPLED SPHERICAL HARMONICS EXPANSION MODEL
• INTERPLAY OF ELASTIC AND INELASTIC SCATTERING OPERATORS IN EXTENDED KINETIC MODELS AND THEIR HYDRODYNAMIC LIMITS: REFERENCE MANUAL
• ON THE RELAXATION LIMITS OF THE HYDRODYNAMIC MODEL FOR SEMICONDUCTOR DEVICES
• DIFFUSION AND HOMOGENIZATION APPROXIMATION FOR SEMICONDUCTOR BOLTZMANN–POISSON SYSTEM
• Asymptotics of initial boundary value problems for hydrodynamic and drift diffusion models for semiconductors
• Recovering doping profiles in semiconductor devices with the Boltzmann-Poisson model
• 2D numerical simulation of the MEP energy-transport model with a finite difference scheme
• Energy transport in semiconductor devices
• Diffusive limit of a two dimensional kinetic system of partially quantized particles
• Derivation of a kinetic/drift-diffusion model describing fast and slow particles
• A COUPLED SPHERICAL HARMONICS EXPANSION MODEL FOR CONFINED PARTICLES
• ANALYSIS OF A SPHERICAL HARMONICS EXPANSION MODEL OF PLASMA PHYSICS
• Exciton-catalyzed recombination-generation of electrons and holes in semiconductors: a kinetic approach
• Anomalous diffusion limit for kinetic equations with degenerate collision frequency
• NUMERICAL SOLUTION FOR HYDRODYNAMICAL MODELS OF SEMICONDUCTORS
• Title not available (Why is that?)
• A system of parabolic equations in nonequilibrium thermodynamics including thermal and electrical effects
• 2D simulation of a silicon MESFET with a nonparabolic hydrodynamical model based on the maximum entropy principle
• A relaxation scheme for the hydrodynamic equations for semiconductors
• Simulation of Gunn oscillations with a non‐parabolic hydrodynamical model based on the maximum entropy principle
• A note on the entropy production of the radiative transfer equation
• A coupled Schrödinger drift-diffusion model for quantum semiconductor device simulations
• On Well-Posedness of a Boltzmann-Like Semiconductor Model
• A three-fluid approach in bipolar semiconductors with generation-recombination: constitutive laws and Onsager symmetry
• Macroscopic models for ionization in the presence of strong electric fields
• Numerical methods for kinetic equations in semiconductor superlattices
• Study on a cross diffusion parabolic system
• An asymptotic-preserving scheme for the semiconductor Boltzmann equation toward the energy-transport limit
• Relaxation limit in bipolar semiconductor hydrodynamic model with non-constant doping profile
• Positivity preserving discretization of time dependent semiconductor drift-diffusion equations
• Diffusion limits of the linear boltzmann equation in extended kinetic theory: Weak and strong inelastic collisions
• Kinetic boundary layers and fluid-kinetic coupling in semiconductors
• Homogenized diffusion limit of a Vlasov-Poisson-Fokker-Planck model
• Nonlinear stability of smooth solutions of the energy-transport model for semiconductors
• An energy transport model describing heat generation and conduction in silicon semiconductors
• LOW AND HIGH FIELD SCALING LIMITS FOR THE VLASOV– AND WIGNER–POISSON–FOKKER–PLANCK SYSTEMS
• Numerical solver for the time-dependent far-from-equilibrium Boltzmann equation
• Group classification of an energy transport model for semiconductors with crystal heating
• A strong ionization model in plasma physics
• Analysis of a bipolar energy-transport model for a metal-oxide-semiconductor diode
• Local-in-time well-posedness of a regularized mathematical model for silicon MESFET
• The free path in a high velocity random flight process associated to a Lorentz gas in an external field
• From the Boltzmann equation to generalized kinetic models in applied sciences
• Non-parabolic band hydrodynamical model of silicon semiconductors and simulation of electron devices
• Study of hydrodynamical limits in a multicollision scale Boltzmann equation for semiconductors
• On the modeling and simulation of reaction-transfer dynamics in semiconductor-electrolyte solar cells
• Lyapunov functionals, weak sequential stability, and uniqueness analysis for energy-transport systems
• Asymptotic preserving schemes for the Wigner-Poisson-BGK equations in the diffusion limit
• Discrete duality finite volume schemes for two‐dimensional drift‐diffusion and energy‐transport models
• On the initial-boundary value problem for the bipolar hydrodynamic model for semiconductors
• Numerical discretization of energy-transport model for semiconductors using high-order compact schemes
• THE GLOBAL WEAK SOLUTION AND RELAXATION LIMITS OF THE INITIAL–BOUNDARY VALUE PROBLEM TO THE BIPOLAR HYDRODYNAMIC MODEL FOR SEMICONDUCTORS
• Nonlinear asymptotic stability of the equilibrium state for the MEP model of charge transport in semiconductors
• LOW AND HIGH FIELD SCALING LIMITS FOR THE VLASOV– AND WIGNER–POISSON–FOKKER–PLANCK SYSTEMS
• Diffusive semiconductor moment equations using Fermi-Dirac statistics
• OPTIMAL DOPANT PROFILING BASED ON ENERGY-TRANSPORT SEMICONDUCTOR MODELS
• An asymptotic-preserving scheme for the semiconductor Boltzmann equation with two-scale collisions: a splitting approach
• Semiconductor device optimization in the presence of thermal effects
• On fluid limit for the semiconductors Boltzmann equation
• THE GLOBAL WEAK SOLUTION AND RELAXATION LIMITS OF THE INITIAL–BOUNDARY VALUE PROBLEM TO THE BIPOLAR HYDRODYNAMIC MODEL FOR SEMICONDUCTORS
• Duality theory for solutions to Volterra integral equations
• 2d numerical simulations of an electron-phonon hydrodynamical model based on the maximum entropy principle
• Energy-transport systems for optical lattices: Derivation, analysis, simulation
• Quantum energy-transport and drift-diffusion models
• Analysis of numerical schemes for semiconductor energy-transport models
• A complete multifluid model for bipolar semiconductors, with interacting carriers, phonons, and photons
• DIFFUSION OF ELECTRONS BY MULTICHARGED IONS
• Asymptotic stability of the stationary solution for a new mathematical model of charge transport in semiconductors
• Mathematical study of a Lagrange-multiplier technique for stiff transport problems
• A new approach to numerical simulation of charge transport in double gate-MOSFET
• Numerical analysis of DDFV schemes for semiconductors energy-transport models
• Diffusion limit of a Boltzmann-Poisson system with nonlinear equilibrium state
• Numerical scheme for the far-out-of-equilibrium time-dependent Boltzmann collision operator: 1D second-degree momentum discretisation and adaptive time stepping
• Optimal Control for Semiconductor Diode Design based on the MEP Energy-Transport Model
• Numerical solver for the out-of-equilibrium time dependent Boltzmann collision operator: application to 2D materials
• On an algorithm for finding the electric potential distribution in the DG-MOSFET transistor
• Title not available (Why is that?)
• Homogenization and hydrodynamic limit for Fermi-Dirac statistics coupled to a Poisson equation
• A two-surface problem of the electron flow in a semiconductor on the basis of kinetic theory
• Title not available (Why is that?)
• Hydrodynamic limit for an arc discharge at atmospheric pressure
• Global existence for the system of the macroscopic balance equations of charge transport in semiconductors
• Regularity of the solution and well-posedness of a mixed problem for an elliptic system with quadratic nonlinearity in gradients
• Weak Solutions for Nonlinear Boltzmann–Poisson System Modelling Electron–Electron Interactions
• Asymptotic-preserving discretization of three-dimensional plasma fluid models
• A hydrodynamical model for holes in silicon semiconductors
• Diffusion limit of a Boltzmann-Poisson system: case of general inflow boundary data profile
• Global existence analysis for degenerate energy-transport models for semiconductors
• Hybrid coupling of a one-dimensional energy-transport Schrödinger system
• Mathematical aspects and simulation of electron-electron scattering in graphene

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