On a hierarchy of macroscopic models for semiconductors

DOI10.1063/1.531567MaRDI QIDQ5284790zbMATH OpenOpenAlexFDO

Authors Naoufel Ben Abdallah, Pierre Degond

Publication date 17 August 1997

Published in Journal of Mathematical Physics (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1063/1.531567

zbMATH Keywords

asymptoticsBoltzmann equationdiffusion limitdrift-diffusion modelrelaxation limitsemiconductorspherical harmonic expansion model

Mathematics Subject Classification ID

Integro-partial differential equations (45K05) Asymptotics of solutions to integral equations (45M05) Rarefied gas flows, Boltzmann equation in fluid mechanics (76P05) Technical applications of optics and electromagnetic theory (78A55) Transport processes in time-dependent statistical mechanics (82C70)

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Cites work

• COMPARATIVE STUDIES OF HYDRODYNAMIC AND ENERGY TRANSPORT MODELS
• Conservation laws from the Boltzmann equation describing electron-phonon interactions in semiconductors
• High electric field approximation to charge transport in semiconductor devices
• Multidimensional spherical harmonics expansion of Boltzmann equation for transport in semiconductors
• Space homogeneous solutions of the Boltzmann equation describing electron-phonon interactions in semiconductors
• The influence of interelectronic collisions on conduction and breakdown in covalent semi-conductors
• The influence of interelectronic collisions on conduction and breakdown in polar crystals
• Theory of the flow of electrons and holes in Germanium and other semiconductors

Cited in

(only showing first 100 items - show all)

• Duality theory for solutions to Volterra integral equations
• From the Boltzmann equation to generalized kinetic models in applied sciences
• A system of parabolic equations in nonequilibrium thermodynamics including thermal and electrical effects
• Derivation of a kinetic/drift-diffusion model describing fast and slow particles
• 2D simulation of a silicon MESFET with a nonparabolic hydrodynamical model based on the maximum entropy principle
• Numerical discretization of energy-transport model for semiconductors using high-order compact schemes
• Hybrid coupling of a one-dimensional energy-transport Schrödinger system
• Global existence for the system of the macroscopic balance equations of charge transport in semiconductors
• Quantum energy-transport and drift-diffusion models
• A note on the entropy production of the radiative transfer equation
• A coupled Schrödinger drift-diffusion model for quantum semiconductor device simulations
• A relaxation scheme for the hydrodynamic equations for semiconductors
• On fluid limit for the semiconductors Boltzmann equation
• Diffusive semiconductor moment equations using Fermi-Dirac statistics
• A new approach to numerical simulation of charge transport in double gate-MOSFET
• Analysis of numerical schemes for semiconductor energy-transport models
• Numerical analysis of DDFV schemes for semiconductors energy-transport models
• Global analytic solutions of the semiconductor Boltzmann-Dirac-Benney equation with relaxation time approximation
• The stationary solution of a one-dimensional bipolar quantum hydrodynamic model
• Global existence analysis for degenerate energy-transport models for semiconductors
• Semiconductor Boltzmann-Dirac-Benney equation with a BGK-type collision operator: existence of solutions vs. ill-posedness
• A three-fluid approach in bipolar semiconductors with generation-recombination: constitutive laws and Onsager symmetry
• A strong ionization model in plasma physics
• A two-surface problem of the electron flow in a semiconductor on the basis of kinetic theory
• Hydrodynamic limit for an arc discharge at atmospheric pressure
• Linear asymptotic stability of the equilibrium state for the 2-D MEP hydrodynamical model of charge transport in semiconductors
• An asymptotic-preserving scheme for the semiconductor Boltzmann equation with two-scale collisions: a splitting approach
• Large time behavior and energy relaxation time limit of the solutions to an energy transport model in semiconductors
• Mathematical aspects and simulation of electron-electron scattering in graphene
• The existence of moments of solutions to transport equations with inelastic scattering and their application in the asymptotic analysis
• Macroscopic models for ionization in the presence of strong electric fields
• Non-parabolic band hydrodynamical model of silicon semiconductors and simulation of electron devices
• The free path in a high velocity random flight process associated to a Lorentz gas in an external field
• Regularity of the solution and well-posedness of a mixed problem for an elliptic system with quadratic nonlinearity in gradients
• Semiconductor device optimization in the presence of thermal effects
• Anomalous diffusion limit for kinetic equations with degenerate collision frequency
• Asymptotic stability of the stationary solution for a new mathematical model of charge transport in semiconductors
• Energy transport in semiconductor devices
• Homogenization and hydrodynamic limit for Fermi-Dirac statistics coupled to a Poisson equation
• A hydrodynamical model for holes in silicon semiconductors
• On Well-Posedness of a Boltzmann-Like Semiconductor Model
• Homogenized diffusion limit of a Vlasov-Poisson-Fokker-Planck model
• Study of the jump conditions for the 2D MEP hydrodynamical model of charge transport in semiconductors
• Asymptotic preserving schemes for the Wigner-Poisson-BGK equations in the diffusion limit
• On quantum extensions to classical spherical harmonics expansion/Fokker-Planck models
• On the modeling and simulation of reaction-transfer dynamics in semiconductor-electrolyte solar cells
• Strong discontinuities for the 2-D MEP hydrodynamical model of charge transport in semiconductors
• DIFFUSION AND HOMOGENIZATION APPROXIMATION FOR SEMICONDUCTOR BOLTZMANN–POISSON SYSTEM
• OPTIMAL DOPANT PROFILING BASED ON ENERGY-TRANSPORT SEMICONDUCTOR MODELS
• Diffusion limits of the linear boltzmann equation in extended kinetic theory: Weak and strong inelastic collisions
• Discrete duality finite volume schemes for two‐dimensional drift‐diffusion and energy‐transport models
• Kinetic relaxation models for the Boltzmann transport equation for silicon semiconductors
• Semiconductor device design using the \textsc{BiMADS} algorithm
• Study of hydrodynamical limits in a multicollision scale Boltzmann equation for semiconductors
• Kinetic boundary layers and fluid-kinetic coupling in semiconductors
• The Drift–Diffusion Limit for Electron–Phonon Interaction in Semiconductors
• scientific article; zbMATH DE number 2042309 (Why is no real title available?)
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• Positivity preserving discretization of time dependent semiconductor drift-diffusion equations
• THE GLOBAL WEAK SOLUTION AND RELAXATION LIMITS OF THE INITIAL–BOUNDARY VALUE PROBLEM TO THE BIPOLAR HYDRODYNAMIC MODEL FOR SEMICONDUCTORS
• Homogenization of a spherical harmonics expansion model
• Energy-transport systems for optical lattices: Derivation, analysis, simulation
• Nonlinear stability of smooth solutions of the energy-transport model for semiconductors
• Simulation of Gunn oscillations with a non‐parabolic hydrodynamical model based on the maximum entropy principle
• Macroscopic models for semiconductor heterostructures
• Macroscopic Models for Almost Elastic Nonlinear Electron-Phonon Interaction in Semiconductors
• Lyapunov functionals, weak sequential stability, and uniqueness analysis for energy-transport systems
• INTERPLAY OF ELASTIC AND INELASTIC SCATTERING OPERATORS IN EXTENDED KINETIC MODELS AND THEIR HYDRODYNAMIC LIMITS: REFERENCE MANUAL
• DIFFUSION OF ELECTRONS BY MULTICHARGED IONS
• NUMERICAL SOLUTION FOR HYDRODYNAMICAL MODELS OF SEMICONDUCTORS
• THE GLOBAL WEAK SOLUTION AND RELAXATION LIMITS OF THE INITIAL–BOUNDARY VALUE PROBLEM TO THE BIPOLAR HYDRODYNAMIC MODEL FOR SEMICONDUCTORS
• AN INFINITE SYSTEM OF DIFFUSION EQUATIONS ARISING IN TRANSPORT THEORY: THE COUPLED SPHERICAL HARMONICS EXPANSION MODEL
• THE HIGH FIELD ASYMPTOTICS FOR DEGENERATE SEMICONDUCTORS
• ON THE RELAXATION LIMITS OF THE HYDRODYNAMIC MODEL FOR SEMICONDUCTOR DEVICES
• On spherical harmonics expansion type modelsfor electron–phonon collisions
• Discrete version of the SHE asymptotics: multigroup neutron transport equations
• Numerical methods for kinetic equations in semiconductor superlattices
• Exciton-catalyzed recombination-generation of electrons and holes in semiconductors: a kinetic approach
• Mathematical study of a Lagrange-multiplier technique for stiff transport problems
• Optimal Control for Semiconductor Diode Design based on the MEP Energy-Transport Model
• scientific article; zbMATH DE number 5679679 (Why is no real title available?)
• Diffusion limit of a Boltzmann-Poisson system with nonlinear equilibrium state
• ANALYSIS OF A SPHERICAL HARMONICS EXPANSION MODEL OF PLASMA PHYSICS
• A COUPLED SPHERICAL HARMONICS EXPANSION MODEL FOR CONFINED PARTICLES
• Asymptotic stability of the equilibrium state for the hydrodynamical model of charge transport in semiconductors based on the maximum entropy principle
• On an algorithm for finding the electric potential distribution in the DG-MOSFET transistor
• Recovering doping profiles in semiconductor devices with the Boltzmann-Poisson model
• LOW AND HIGH FIELD SCALING LIMITS FOR THE VLASOV– AND WIGNER–POISSON–FOKKER–PLANCK SYSTEMS
• LOW AND HIGH FIELD SCALING LIMITS FOR THE VLASOV– AND WIGNER–POISSON–FOKKER–PLANCK SYSTEMS
• Asymptotics of initial boundary value problems for hydrodynamic and drift diffusion models for semiconductors
• On the initial-boundary value problem for the bipolar hydrodynamic model for semiconductors
• Numerical scheme for the far-out-of-equilibrium time-dependent Boltzmann collision operator: 1D second-degree momentum discretisation and adaptive time stepping
• Numerical solver for the time-dependent far-from-equilibrium Boltzmann equation
• Numerical solver for the out-of-equilibrium time dependent Boltzmann collision operator: application to 2D materials
• Weak Solutions for Nonlinear Boltzmann–Poisson System Modelling Electron–Electron Interactions
• Analysis of a bipolar energy-transport model for a metal-oxide-semiconductor diode
• An energy transport model describing heat generation and conduction in silicon semiconductors
• Local-in-time well-posedness of a regularized mathematical model for silicon MESFET
• 2d numerical simulations of an electron-phonon hydrodynamical model based on the maximum entropy principle
• Asymptotic-preserving discretization of three-dimensional plasma fluid models

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