On a hierarchy of macroscopic models for semiconductors

DOI10.1063/1.531567MaRDI QIDQ5284790zbMATH OpenOpenAlexFDO

Authors Naoufel Ben Abdallah, Pierre Degond

Publication date 17 August 1997

Published in Journal of Mathematical Physics (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1063/1.531567

zbMATH Keywords

asymptoticsBoltzmann equationdiffusion limitdrift-diffusion modelsemiconductorrelaxation limitspherical harmonic expansion model

Mathematics Subject Classification ID

Technical applications of optics and electromagnetic theory (78A55) Integro-partial differential equations (45K05) Rarefied gas flows, Boltzmann equation in fluid mechanics (76P05) Transport processes in time-dependent statistical mechanics (82C70) Asymptotics of solutions to integral equations (45M05)

Recommendations

• The Drift–Diffusion Limit for Electron–Phonon Interaction in Semiconductors
• On the convergence of the Boltzmann equation for semiconductors toward the energy transport model
• scientific article; zbMATH DE number 2042309
• scientific article; zbMATH DE number 5507729

Cites work

• COMPARATIVE STUDIES OF HYDRODYNAMIC AND ENERGY TRANSPORT MODELS
• Conservation laws from the Boltzmann equation describing electron-phonon interactions in semiconductors
• High electric field approximation to charge transport in semiconductor devices
• Multidimensional spherical harmonics expansion of Boltzmann equation for transport in semiconductors
• Space homogeneous solutions of the Boltzmann equation describing electron-phonon interactions in semiconductors
• The influence of interelectronic collisions on conduction and breakdown in covalent semi-conductors
• The influence of interelectronic collisions on conduction and breakdown in polar crystals
• Theory of the flow of electrons and holes in Germanium and other semiconductors

Cited in

(only showing first 100 items - show all)

• An energy transport model describing heat generation and conduction in silicon semiconductors
• Energy transport in semiconductor devices
• On Well-Posedness of a Boltzmann-Like Semiconductor Model
• A system of parabolic equations in nonequilibrium thermodynamics including thermal and electrical effects
• THE HIGH FIELD ASYMPTOTICS FOR DEGENERATE SEMICONDUCTORS
• On the initial-boundary value problem for the bipolar hydrodynamic model for semiconductors
• DIFFUSION AND HOMOGENIZATION APPROXIMATION FOR SEMICONDUCTOR BOLTZMANN–POISSON SYSTEM
• 2D simulation of a silicon MESFET with a nonparabolic hydrodynamical model based on the maximum entropy principle
• Semiconductor device optimization in the presence of thermal effects
• Analysis of numerical schemes for semiconductor energy-transport models
• Study of hydrodynamical limits in a multicollision scale Boltzmann equation for semiconductors
• NUMERICAL SOLUTION FOR HYDRODYNAMICAL MODELS OF SEMICONDUCTORS
• The free path in a high velocity random flight process associated to a Lorentz gas in an external field
• LOW AND HIGH FIELD SCALING LIMITS FOR THE VLASOV– AND WIGNER–POISSON–FOKKER–PLANCK SYSTEMS
• A note on the entropy production of the radiative transfer equation
• A relaxation scheme for the hydrodynamic equations for semiconductors
• Simulation of Gunn oscillations with a non‐parabolic hydrodynamical model based on the maximum entropy principle
• Analysis of a bipolar energy-transport model for a metal-oxide-semiconductor diode
• Local-in-time well-posedness of a regularized mathematical model for silicon MESFET
• Homogenization of a spherical harmonics expansion model
• Diffusion limits of the linear boltzmann equation in extended kinetic theory: Weak and strong inelastic collisions
• Numerical discretization of energy-transport model for semiconductors using high-order compact schemes
• Asymptotics of initial boundary value problems for hydrodynamic and drift diffusion models for semiconductors
• On spherical harmonics expansion type modelsfor electron–phonon collisions
• A three-fluid approach in bipolar semiconductors with generation-recombination: constitutive laws and Onsager symmetry
• Linear asymptotic stability of the equilibrium state for the 2-D MEP hydrodynamical model of charge transport in semiconductors
• Recovering doping profiles in semiconductor devices with the Boltzmann-Poisson model
• AN INFINITE SYSTEM OF DIFFUSION EQUATIONS ARISING IN TRANSPORT THEORY: THE COUPLED SPHERICAL HARMONICS EXPANSION MODEL
• INTERPLAY OF ELASTIC AND INELASTIC SCATTERING OPERATORS IN EXTENDED KINETIC MODELS AND THEIR HYDRODYNAMIC LIMITS: REFERENCE MANUAL
• ON THE RELAXATION LIMITS OF THE HYDRODYNAMIC MODEL FOR SEMICONDUCTOR DEVICES
• THE GLOBAL WEAK SOLUTION AND RELAXATION LIMITS OF THE INITIAL–BOUNDARY VALUE PROBLEM TO THE BIPOLAR HYDRODYNAMIC MODEL FOR SEMICONDUCTORS
• THE GLOBAL WEAK SOLUTION AND RELAXATION LIMITS OF THE INITIAL–BOUNDARY VALUE PROBLEM TO THE BIPOLAR HYDRODYNAMIC MODEL FOR SEMICONDUCTORS
• Duality theory for solutions to Volterra integral equations
• Discrete duality finite volume schemes for two‐dimensional drift‐diffusion and energy‐transport models
• Energy-transport systems for optical lattices: Derivation, analysis, simulation
• Semiconductor device design using the \textsc{BiMADS} algorithm
• A complete multifluid model for bipolar semiconductors, with interacting carriers, phonons, and photons
• Macroscopic models for ionization in the presence of strong electric fields
• A coupled Schrödinger drift-diffusion model for quantum semiconductor device simulations
• Diffusive limit of a two dimensional kinetic system of partially quantized particles
• Quantum energy-transport and drift-diffusion models
• Group classification of an energy transport model for semiconductors with crystal heating
• Nonlinear asymptotic stability of the equilibrium state for the MEP model of charge transport in semiconductors
• Numerical methods for kinetic equations in semiconductor superlattices
• Discrete version of the SHE asymptotics: multigroup neutron transport equations
• On fluid limit for the semiconductors Boltzmann equation
• An asymptotic-preserving scheme for the semiconductor Boltzmann equation with two-scale collisions: a splitting approach
• Study on a cross diffusion parabolic system
• Kinetic boundary layers and fluid-kinetic coupling in semiconductors
• LOW AND HIGH FIELD SCALING LIMITS FOR THE VLASOV– AND WIGNER–POISSON–FOKKER–PLANCK SYSTEMS
• An asymptotic-preserving scheme for the semiconductor Boltzmann equation toward the energy-transport limit
• Relaxation limit in bipolar semiconductor hydrodynamic model with non-constant doping profile
• Homogenized diffusion limit of a Vlasov-Poisson-Fokker-Planck model
• Diffusive semiconductor moment equations using Fermi-Dirac statistics
• A COUPLED SPHERICAL HARMONICS EXPANSION MODEL FOR CONFINED PARTICLES
• ANALYSIS OF A SPHERICAL HARMONICS EXPANSION MODEL OF PLASMA PHYSICS
• From the Boltzmann equation to generalized kinetic models in applied sciences
• 2D numerical simulation of the MEP energy-transport model with a finite difference scheme
• On quantum extensions to classical spherical harmonics expansion/Fokker-Planck models
• Exciton-catalyzed recombination-generation of electrons and holes in semiconductors: a kinetic approach
• Derivation of a kinetic/drift-diffusion model describing fast and slow particles
• scientific article; zbMATH DE number 2042309 (Why is no real title available?)
• Macroscopic models for semiconductor heterostructures
• Asymptotic preserving schemes for the Wigner-Poisson-BGK equations in the diffusion limit
• Non-parabolic band hydrodynamical model of silicon semiconductors and simulation of electron devices
• A strong ionization model in plasma physics
• Positivity preserving discretization of time dependent semiconductor drift-diffusion equations
• 2d numerical simulations of an electron-phonon hydrodynamical model based on the maximum entropy principle
• Large time behavior and energy relaxation time limit of the solutions to an energy transport model in semiconductors
• Asymptotic stability of the equilibrium state for the hydrodynamical model of charge transport in semiconductors based on the maximum entropy principle
• On the modeling and simulation of reaction-transfer dynamics in semiconductor-electrolyte solar cells
• Lyapunov functionals, weak sequential stability, and uniqueness analysis for energy-transport systems
• Numerical solver for the time-dependent far-from-equilibrium Boltzmann equation
• Anomalous diffusion limit for kinetic equations with degenerate collision frequency
• Nonlinear stability of smooth solutions of the energy-transport model for semiconductors
• OPTIMAL DOPANT PROFILING BASED ON ENERGY-TRANSPORT SEMICONDUCTOR MODELS
• Numerical analysis of DDFV schemes for semiconductors energy-transport models
• Asymptotic-preserving discretization of three-dimensional plasma fluid models
• DIFFUSION OF ELECTRONS BY MULTICHARGED IONS
• Diffusion limit of a Boltzmann-Poisson system with nonlinear equilibrium state
• Global existence for the system of the macroscopic balance equations of charge transport in semiconductors
• A two-surface problem of the electron flow in a semiconductor on the basis of kinetic theory
• A hydrodynamical model for holes in silicon semiconductors
• On an algorithm for finding the electric potential distribution in the DG-MOSFET transistor
• Kinetic relaxation models for the Boltzmann transport equation for silicon semiconductors
• Study of the jump conditions for the 2D MEP hydrodynamical model of charge transport in semiconductors
• Global analytic solutions of the semiconductor Boltzmann-Dirac-Benney equation with relaxation time approximation
• Numerical scheme for the far-out-of-equilibrium time-dependent Boltzmann collision operator: 1D second-degree momentum discretisation and adaptive time stepping
• The existence of moments of solutions to transport equations with inelastic scattering and their application in the asymptotic analysis
• Asymptotic stability of the stationary solution for a new mathematical model of charge transport in semiconductors
• The stationary solution of a one-dimensional bipolar quantum hydrodynamic model
• Hydrodynamic limit for an arc discharge at atmospheric pressure
• Semiconductor Boltzmann-Dirac-Benney equation with a BGK-type collision operator: existence of solutions vs. ill-posedness
• Mathematical study of a Lagrange-multiplier technique for stiff transport problems
• scientific article; zbMATH DE number 5679679 (Why is no real title available?)
• Optimal Control for Semiconductor Diode Design based on the MEP Energy-Transport Model
• Regularity of the solution and well-posedness of a mixed problem for an elliptic system with quadratic nonlinearity in gradients
• scientific article; zbMATH DE number 2066062 (Why is no real title available?)
• Numerical solver for the out-of-equilibrium time dependent Boltzmann collision operator: application to 2D materials
• Strong discontinuities for the 2-D MEP hydrodynamical model of charge transport in semiconductors

This page was built for publication: On a hierarchy of macroscopic models for semiconductors

Report a bug (only for logged in users!)Click here to report a bug for this page (MaRDI item Q5284790)