Global existence analysis for degenerate energy-transport models for semiconductors

DOI10.1016/J.JDE.2014.12.007zbMATH Open1357.35182arXiv1310.3377OpenAlexW2964020225MaRDI QIDQ2256002FDOQ2256002

Authors: Nicola Zamponi, Ansgar Jüngel 

Publication date: 18 February 2015

Published in: Journal of Differential Equations (Search for Journal in Brave)

Abstract: A class of energy-transport equations without electric field under mixed Dirichlet-Neumann boundary conditions is analyzed. The system of degenerate and strongly coupled parabolic equations for the particle density and temperature arises in semiconductor device theory. The global-in-time existence of weak nonnegative solutions is shown. The proof consists of a variable transformation and a semi-discretization in time such that the discretized system becomes elliptic and semilinear. Positive approximate solutions are obtained by Stampacchia truncation arguments and a new cut-off test function. Nonlogarithmic entropy inequalities yield gradient estimates which allow for the limit of vanishing time step sizes. Exploiting the entropy inequality, the long-time convergence of the weak solutions to the constant steady state is proved. Because of the lack of appropriate convex Sobolev inequalities to estimate the entropy dissipation, only an algebraic decay rate is obtained. Numerical experiments indicate that the decay rate is typically exponential.

Full work available at URL: https://arxiv.org/abs/1310.3377

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zbMATH Keywords

semiconductorsglobal existence of solutionsenergy-transport equationsalgebraic equilibration rateStampacchia truncation

Mathematics Subject Classification ID

Initial-boundary value problems for second-order parabolic systems (35K51) Degenerate parabolic equations (35K65) PDEs in connection with classical thermodynamics and heat transfer (35Q79) Statistical mechanics of semiconductors (82D37)

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Cited In (13)

• Global solvability of the ballistic diode problem for simplified models of charge transport in semiconductors
• Numerical analysis of DDFV schemes for semiconductors energy-transport models
• The 3D transient semiconductor equations with gradient-dependent and interfacial recombination
• Existence analysis for a simplified transient energy-transport model for semiconductors
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• A solution to the simplified multi-dimensional energy-transport model with a general conductivity for semiconductors
• Analysis of numerical schemes for semiconductor energy-transport models
• On a cross-diffusion model for multiple species with nonlocal interaction and size exclusion

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