Global existence analysis for degenerate energy-transport models for semiconductors

DOI10.1016/J.JDE.2014.12.007MaRDI QIDQ2256002zbMATH OpenOpenAlexFDO

Authors Nicola Zamponi, Ansgar Jüngel

Publication date 18 February 2015

Published in Journal of Differential Equations (Search for Journal in Brave)

Full work available at URL https://arxiv.org/abs/1310.3377

zbMATH Keywords

algebraic equilibration rateenergy-transport equationsglobal existence of solutionssemiconductorsStampacchia truncation

Mathematics Subject Classification ID

Initial-boundary value problems for second-order parabolic systems (35K51) Degenerate parabolic equations (35K65) PDEs in connection with classical thermodynamics and heat transfer (35Q79) Statistical mechanics of semiconductors (82D37)

Abstract: A class of energy-transport equations without electric field under mixed Dirichlet-Neumann boundary conditions is analyzed. The system of degenerate and strongly coupled parabolic equations for the particle density and temperature arises in semiconductor device theory. The global-in-time existence of weak nonnegative solutions is shown. The proof consists of a variable transformation and a semi-discretization in time such that the discretized system becomes elliptic and semilinear. Positive approximate solutions are obtained by Stampacchia truncation arguments and a new cut-off test function. Nonlogarithmic entropy inequalities yield gradient estimates which allow for the limit of vanishing time step sizes. Exploiting the entropy inequality, the long-time convergence of the weak solutions to the constant steady state is proved. Because of the lack of appropriate convex Sobolev inequalities to estimate the entropy dissipation, only an algebraic decay rate is obtained. Numerical experiments indicate that the decay rate is typically exponential.

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Cited in

(14)

• Analysis of numerical schemes for semiconductor energy-transport models
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