Global solvability of the ballistic diode problem for simplified models of charge transport in semiconductors
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Publication:2883014
zbMATH Open1249.35317MaRDI QIDQ2883014FDOQ2883014
Authors: R. S. Bushmanov, A. M. Blokhin 
Publication date: 11 May 2012
Published in: Vestnik Novosibirskogo Gosudarstvennogo Universiteta. Seriya: Matematika, Mekhanika, Informatika (Search for Journal in Brave)
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Stability in context of PDEs (35B35) PDEs in connection with optics and electromagnetic theory (35Q60) Statistical mechanics of semiconductors (82D37)
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- Title not available (Why is that?)
- Simulation of an \(n^+\)-\(n\)-\(n^+\) diode by using globally-hyperbolically-closed high-order moment models
- 1D numerical simulation of the mep mathematical model in ballistic diode problem
- The constructions of a class of numerical algorithms in the ballistic diode problem
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