The 3D transient semiconductor equations with gradient-dependent and interfacial recombination

DOI10.1142/S0218202519500350zbMATH Open1425.35097arXiv1805.01348OpenAlexW2964244485WikidataQ127750291 ScholiaQ127750291MaRDI QIDQ4973265FDOQ4973265

Authors: Karoline Disser, Joachim Rehberg 

Publication date: 3 December 2019

Published in: M\(^3\)AS. Mathematical Models \& Methods in Applied Sciences (Search for Journal in Brave)

Abstract: We establish the well-posedness of the transient van Roosbroeck system in three space dimensions under realistic assumptions on the data: non-smooth domains, discontinuous coefficient functions and mixed boundary conditions. Moreover, within this analysis, recombination terms may be concentrated on surfaces and interfaces and may not only depend on charge-carrier densities, but also on the electric field and currents. In particular, this includes Avalanche recombination. The proofs are based on recent abstract results on maximal parabolic and optimal elliptic regularity of divergence-form operators.

Full work available at URL: https://arxiv.org/abs/1805.01348

Recommendations

• Semiconductor equations modelling non-stationary avalanche generation in 3D
• Publication:3492055
• Publication:3467967
• EXISTENCE AND REGULARITY FOR VAN ROOSBROECK SYSTEMS WITH GENERAL MIXED BOUNDARY CONDITIONS
• On Weak Solutions to the Non-stationary van Roosbroeck's System with Discontinuous Permittivities

zbMATH Keywords

mixed boundary conditionsnonlinear parabolic systemsemiconductor deviceheterogeneous materialvan Roosbroeck's systemAvalanche recombinationdiscontinuous coefficients and datasurface recombination

Mathematics Subject Classification ID

Initial value problems for second-order parabolic systems (35K45) Nonlinear parabolic equations (35K55) Reaction-diffusion equations (35K57) PDEs in connection with optics and electromagnetic theory (35Q60) PDEs with low regular coefficients and/or low regular data (35R05) Motion of charged particles (78A35)

Cites Work

• Title not available (Why is that?)
• Title not available (Why is that?)
• Title not available (Why is that?)
• A \(W^{1,p}\)-estimate for solutions to mixed boundary value problems for second order elliptic differential equations
• The asymptotic behavior of globally smooth solutions of the multidimensional isentropic hydrodynamic model for semiconductors.
• Title not available (Why is that?)
• Title not available (Why is that?)
• Title not available (Why is that?)
• Title not available (Why is that?)
• Heat kernels and maximal l^p—l^qestimates for parabolic evolution equations
• Interpolation for Function Spaces Related to Mixed Boundary Value Problems
• Analytic semigroups and optimal regularity in parabolic problems
• Stability of semiconductor states with insulating and contact boundary conditions
• Title not available (Why is that?)
• Title not available (Why is that?)
• Title not available (Why is that?)
• Title not available (Why is that?)
• Title not available (Why is that?)
• Relative boundedness and relative compactness for linear operators in Banach spaces
• GLOBAL EXISTENCE AND ASYMPTOTIC BEHAVIOR FOR A SEMICONDUCTOR DRIFT-DIFFUSION-POISSON MODEL
• Elliptic model problems including mixed boundary conditions and material heterogeneities
• The square root problem for second-order, divergence form operators with mixed boundary conditions on \(L^p\)
• Maximal parabolic regularity for divergence operators on distribution spaces
• Title not available (Why is that?)
• Optimal Sobolev regularity for linear second-order divergence elliptic operators occurring in real-world problems
• Coercivity for elliptic operators and positivity of solutions on Lipschitz domains
• Maximal parabolic regularity for divergence operators including mixed boundary conditions
• Hölder continuity and optimal control for nonsmooth elliptic problems
• On the basic equations for carrier transport in semiconductors
• Analysis of \(p(x)\)-Laplace thermistor models describing the electrothermal behavior of organic semiconductor devices
• Theory of the flow of electrons and holes in Germanium and other semiconductors
• An electronic model for solar cells including active interfaces and energy resolved defect densities
• \(L^{p}\)-maximal regularity for nonautonomous evolution equations
• Maximal regularity and kernel bounds: observations on a theorem by Hieber and Prüss
• Maximal regularity in \(L^p\) spaces for an abstract Cauchy problem
• On the uniqueness of solutions for nonlinear elliptic-parabolic equations
• \(L^{\infty }\)-estimates for divergence operators on bad domains
• On the semiconductor drift diffusion equations
• Hardy's inequality for functions vanishing on a part of the boundary
• Title not available (Why is that?)
• Semiconductor Equations for variable Mobilities Based on Boltzmann Statistics or Fermi-Dirac Statistics
• On a drift-diffusion system for semiconductor devices
• Hölder regularity for non-autonomous abstract parabolic equations
• Title not available (Why is that?)
• Classical solutions of drift-diffusion equations for semiconductor devices: The two-dimensional case
• Title not available (Why is that?)
• Title not available (Why is that?)
• Elliptic and parabolic regularity for second-order divergence operators with mixed boundary conditions
• Computational and analytical comparison of flux discretizations for the semiconductor device equations beyond Boltzmann statistics
• Global existence analysis for degenerate energy-transport models for semiconductors

Cited In (7)

• Global existence, uniqueness and stability for nonlinear dissipative bulk-interface interaction systems
• Global-in-time solutions and Hölder continuity for quasilinear parabolic PDEs with mixed boundary conditions in the Bessel dual scale
• Mathematical modeling of the dependences of the monochromatic cathodoluminescence intensity on the electron beam energy for a three-layer semiconductor structure
• Extrapolated elliptic regularity and application to the van Roosbroeck system of semiconductor equations
• Interpolation theory for Sobolev functions with partially vanishing trace on irregular open sets
• Semiconductor equations modelling non-stationary avalanche generation in 3D
• On the inclusion of the recombination term in discretizations of the semiconductor device equations

Uses Software

• WIAS-TeSCA
• Sentaurus Device

This page was built for publication: The 3D transient semiconductor equations with gradient-dependent and interfacial recombination

Report a bug (only for logged in users!)Click here to report a bug for this page (MaRDI item Q4973265)