The 3D transient semiconductor equations with gradient-dependent and interfacial recombination

DOI10.1142/S0218202519500350MaRDI QIDQ4973265zbMATH OpenOpenAlexWikidataFDO

Authors Karoline Disser, Joachim Rehberg

Publication date 3 December 2019

Published in M\(^3\)AS. Mathematical Models \& Methods in Applied Sciences (Search for Journal in Brave)

Full work available at URL https://arxiv.org/abs/1805.01348

zbMATH Keywords

mixed boundary conditionsnonlinear parabolic systemsemiconductor deviceheterogeneous materialvan Roosbroeck's systemAvalanche recombinationdiscontinuous coefficients and datasurface recombination

Mathematics Subject Classification ID

Initial value problems for second-order parabolic systems (35K45) Nonlinear parabolic equations (35K55) Reaction-diffusion equations (35K57) PDEs in connection with optics and electromagnetic theory (35Q60) PDEs with low regular coefficients and/or low regular data (35R05) Motion of charged particles (78A35)

Abstract: We establish the well-posedness of the transient van Roosbroeck system in three space dimensions under realistic assumptions on the data: non-smooth domains, discontinuous coefficient functions and mixed boundary conditions. Moreover, within this analysis, recombination terms may be concentrated on surfaces and interfaces and may not only depend on charge-carrier densities, but also on the electric field and currents. In particular, this includes Avalanche recombination. The proofs are based on recent abstract results on maximal parabolic and optimal elliptic regularity of divergence-form operators.

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Cited in

(7)

• Global existence, uniqueness and stability for nonlinear dissipative bulk-interface interaction systems
• Global-in-time solutions and Hölder continuity for quasilinear parabolic PDEs with mixed boundary conditions in the Bessel dual scale
• Mathematical modeling of the dependences of the monochromatic cathodoluminescence intensity on the electron beam energy for a three-layer semiconductor structure
• Extrapolated elliptic regularity and application to the van Roosbroeck system of semiconductor equations
• Interpolation theory for Sobolev functions with partially vanishing trace on irregular open sets
• Semiconductor equations modelling non-stationary avalanche generation in 3D
• On the inclusion of the recombination term in discretizations of the semiconductor device equations

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