GLOBAL EXISTENCE AND ASYMPTOTIC BEHAVIOR FOR A SEMICONDUCTOR DRIFT-DIFFUSION-POISSON MODEL
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Publication:3521666
DOI10.1142/S0218202508002735zbMath1157.35013OpenAlexW1987610752MaRDI QIDQ3521666
Songmu Zheng, Wu Hao, Peter Alexander Markowich
Publication date: 26 August 2008
Published in: Mathematical Models and Methods in Applied Sciences (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1142/s0218202508002735
weak solutionunique equilibriumelliptic-parabolic system3D whole-space caserecombination-generation rate
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Cites Work
- Long time behavior of solutions of Nernst-Planck and Debye-Hückel drift-diffusion systems
- On the time-dependent drift-diffusion model for semiconductors
- Global solutions of the time-dependent drift-diffusion semiconductor equations
- Exponential decay toward equilibrium via entropy methods for reaction-diffusion equations
- Quasineutral limit of a time-dependent drift-diffusion-Poisson model for p-n junction semiconductor devices
- On large time asymptotics for drift-diffusion-poisson systems
- ON CONVEX SOBOLEV INEQUALITIES AND THE RATE OF CONVERGENCE TO EQUILIBRIUM FOR FOKKER-PLANCK TYPE EQUATIONS
- On Existence, Uniqueness and Asymptotic Behavior of Solutions of the Basic Equations for Carrier Transport in Semiconductors
- STATIONARY STATES IN PLASMA PHYSICS: MAXWELLIAN SOLUTIONS OF THE VLASOV-POISSON SYSTEM
- Quasi-neutral Limit of the Drift Diffusion Models for Semiconductors: The Case of General Sign-Changing Doping Profile
- QUASINEUTRAL LIMIT OF THE MULTI-DIMENSIONAL DRIFT-DIFFUSION-POISSON MODELS FOR SEMICONDUCTORS WITH PN-JUNCTIONS
- Asymptotic behavior of the drift-diffusion semiconductor equations
- On singular limits of mean-field equations.
- Entropy dissipation methods for degenerate parabolic problems and generalized Sobolev inequalities
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