Quasineutral limit of a time-dependent drift-diffusion-Poisson model for p-n junction semiconductor devices
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Publication:2496733
DOI10.1016/j.jde.2006.01.022zbMath1107.35016OpenAlexW2007826653MaRDI QIDQ2496733
Publication date: 20 July 2006
Published in: Journal of Differential Equations (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1016/j.jde.2006.01.022
one space dimensionDebye lengthelliptic-parabolic systementropy production estimatesmultiple scale asymptotic expansionquasineutral limit Debye length
Asymptotic behavior of solutions to PDEs (35B40) Singular perturbations in context of PDEs (35B25) Statistical mechanics of semiconductors (82D37) Motion of charged particles (78A35)
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Cites Work
- On the basic equations for carrier transport in semiconductors
- On Maxwellian equilibria of insulated semiconductors
- Quasi-neutral limit of a nonlinear drift diffusion model for semiconductors
- On large time asymptotics for drift-diffusion-poisson systems
- The initial time layer problem and the quasineutral limit in the semiconductor drift-diffusion model
- FROM VLASOV-POISSON SYSTEM TO THE INCOMPRESSIBLE EULER SYSTEM
- QUASINEUTRAL LIMIT OF THE DRIFT-DIFFUSION MODEL FOR SEMICONDUCTORS WITH GENERAL INITIAL DATA
- Quasineutral Limit of Euler–Poisson System with and without Viscosity
- On Existence, Uniqueness and Asymptotic Behavior of Solutions of the Basic Equations for Carrier Transport in Semiconductors
- An Asymptotic Analysis of a Transient p-n-Junction Model
- Quasineutral limit of an euler-poisson system arising from plasma physics
- Convergence of Nonlinear Schrödinger–Poisson Systems to the Compressible Euler Equations
- Defect measures of the vlasov-poisson system in the quasineutral regime
- QUALITATIVE BEHAVIOR OF SOLUTIONS OF A DEGENERATE NONLINEAR DRIFT-DIFFUSION MODEL FOR SEMICONDUCTORS
- Oscillations in quasineutral plasmas
- convergence of the vlasov-poisson system to the incompressible euler equations
- A Singularly Perturbed Boundary Value Problem Modelling a Semiconductor Device
- Theory of the Flow of Electrons and Holes in Germanium and Other Semiconductors
- An Initial Value Problem from Semiconductor Device Theory
- On singular limits of mean-field equations.
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