Quasineutral limit of a time-dependent drift-diffusion-Poisson model for p-n junction semiconductor devices

DOI10.1016/J.JDE.2006.01.022zbMATH Open1107.35016OpenAlexW2007826653MaRDI QIDQ2496733FDOQ2496733

Authors: Ling Hsiao, Shu Wang 

Publication date: 20 July 2006

Published in: Journal of Differential Equations (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1016/j.jde.2006.01.022

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zbMATH Keywords

elliptic-parabolic systemone space dimensionentropy production estimatesDebye lengthmultiple scale asymptotic expansionquasineutral limit Debye length

Mathematics Subject Classification ID

Asymptotic behavior of solutions to PDEs (35B40) Singular perturbations in context of PDEs (35B25) Motion of charged particles (78A35) Statistical mechanics of semiconductors (82D37)

Cites Work

• On large time asymptotics for drift-diffusion-poisson systems
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• convergence of the vlasov-poisson system to the incompressible euler equations
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• FROM VLASOV-POISSON SYSTEM TO THE INCOMPRESSIBLE EULER SYSTEM
• QUALITATIVE BEHAVIOR OF SOLUTIONS OF A DEGENERATE NONLINEAR DRIFT-DIFFUSION MODEL FOR SEMICONDUCTORS
• An Initial Value Problem from Semiconductor Device Theory
• Defect measures of the vlasov-poisson system in the quasineutral regime
• On the basic equations for carrier transport in semiconductors
• The initial time layer problem and the quasineutral limit in the semiconductor drift-diffusion model
• A hierarchy of hydrodynamic models for plasmas. Quasi-neutral limits in the drift-diffusion equations
• On Existence, Uniqueness and Asymptotic Behavior of Solutions of the Basic Equations for Carrier Transport in Semiconductors
• Theory of the flow of electrons and holes in Germanium and other semiconductors
• Convergence of Nonlinear Schrödinger–Poisson Systems to the Compressible Euler Equations
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• Quasi-neutral limit of a nonlinear drift diffusion model for semiconductors
• QUASINEUTRAL LIMIT OF THE DRIFT-DIFFUSION MODEL FOR SEMICONDUCTORS WITH GENERAL INITIAL DATA
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• A Singularly Perturbed Boundary Value Problem Modelling a Semiconductor Device
• On singular limits of mean-field equations.
• An Asymptotic Analysis of a Transient p-n-Junction Model
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Cited In (18)

• Vanishing cross-diffusion limit in a Keller-Segel system with additional cross-diffusion
• Quasi-neutral limit to the drift-diffusion models for semiconductors with physical contact-insulating boundary conditions and the general sign-changing doping profile
• The initial time layer problem and the quasineutral limit in the semiconductor drift-diffusion model
• Vacuum solution and quasineutral limit of semiconductor drift-diffusion equation
• Quantum semiconductor models
• Quasi-neutral limit and the boundary layer problem of Planck-Nernst-Poisson-Navier-Stokes equations for electro-hydrodynamics
• Quasi-neutral limit and the initial layer problem of the electro-diffusion model arising in electro-hydrodynamics
• On Maxwellian equilibria of insulated semiconductors
• Quasi-neutral limit and the initial layer problem of the drift-diffusion model
• Quasi-neutral limit to the drift-diffusion models for semiconductors with physical contact-insulating boundary conditions
• Quasineutral limit of a standard drift diffusion model for semiconductors.
• QUASINEUTRAL LIMIT OF THE MULTI-DIMENSIONAL DRIFT-DIFFUSION-POISSON MODELS FOR SEMICONDUCTORS WITH PN-JUNCTIONS
• Mixed layer problem and quasineutral limit of the bipolar drift-diffusion model with different mobilities
• Quasineutral limit of the electro-diffusion model arising in electrohydrodynamics
• Quasi-neutral limit of the multidimensional drift-diffusion models for semiconductors
• The limiting problem of the drift-diffusion-Poisson model with discontinuous p-n-junctions
• GLOBAL EXISTENCE AND ASYMPTOTIC BEHAVIOR FOR A SEMICONDUCTOR DRIFT-DIFFUSION-POISSON MODEL
• Quasineutral limit of bipolar quantum hydrodynamic model for semiconductors

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