Quasineutral limit of a time-dependent drift-diffusion-Poisson model for p-n junction semiconductor devices

DOI10.1016/J.JDE.2006.01.022MaRDI QIDQ2496733zbMATH OpenOpenAlexFDO

Authors Ling Hsiao, Shu Wang

Publication date 20 July 2006

Published in Journal of Differential Equations (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1016/j.jde.2006.01.022

zbMATH Keywords

elliptic-parabolic systemone space dimensionentropy production estimatesDebye lengthmultiple scale asymptotic expansionquasineutral limit Debye length

Mathematics Subject Classification ID

Asymptotic behavior of solutions to PDEs (35B40) Singular perturbations in context of PDEs (35B25) Motion of charged particles (78A35) Statistical mechanics of semiconductors (82D37)

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Cited in

(18)

• Vanishing cross-diffusion limit in a Keller-Segel system with additional cross-diffusion
• Quasi-neutral limit to the drift-diffusion models for semiconductors with physical contact-insulating boundary conditions and the general sign-changing doping profile
• The initial time layer problem and the quasineutral limit in the semiconductor drift-diffusion model
• Vacuum solution and quasineutral limit of semiconductor drift-diffusion equation
• Quantum semiconductor models
• Quasi-neutral limit and the boundary layer problem of Planck-Nernst-Poisson-Navier-Stokes equations for electro-hydrodynamics
• Quasi-neutral limit and the initial layer problem of the electro-diffusion model arising in electro-hydrodynamics
• On Maxwellian equilibria of insulated semiconductors
• Quasi-neutral limit to the drift-diffusion models for semiconductors with physical contact-insulating boundary conditions
• Quasi-neutral limit and the initial layer problem of the drift-diffusion model
• Quasineutral limit of a standard drift diffusion model for semiconductors.
• Mixed layer problem and quasineutral limit of the bipolar drift-diffusion model with different mobilities
• QUASINEUTRAL LIMIT OF THE MULTI-DIMENSIONAL DRIFT-DIFFUSION-POISSON MODELS FOR SEMICONDUCTORS WITH PN-JUNCTIONS
• Quasineutral limit of the electro-diffusion model arising in electrohydrodynamics
• Quasi-neutral limit of the multidimensional drift-diffusion models for semiconductors
• The limiting problem of the drift-diffusion-Poisson model with discontinuous p-n-junctions
• GLOBAL EXISTENCE AND ASYMPTOTIC BEHAVIOR FOR A SEMICONDUCTOR DRIFT-DIFFUSION-POISSON MODEL
• Quasineutral limit of bipolar quantum hydrodynamic model for semiconductors

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