QUASINEUTRAL LIMIT OF THE MULTI-DIMENSIONAL DRIFT-DIFFUSION-POISSON MODELS FOR SEMICONDUCTORS WITH PN-JUNCTIONS
DOI10.1142/S021820250600125XzbMATH Open1098.35012OpenAlexW1993361067MaRDI QIDQ5484742FDOQ5484742
Authors: Shu Wang 
Publication date: 21 August 2006
Published in: M\(^3\)AS. Mathematical Models \& Methods in Applied Sciences (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1142/s021820250600125x
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Cites Work
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- convergence of the vlasov-poisson system to the incompressible euler equations
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- FROM VLASOV-POISSON SYSTEM TO THE INCOMPRESSIBLE EULER SYSTEM
- QUALITATIVE BEHAVIOR OF SOLUTIONS OF A DEGENERATE NONLINEAR DRIFT-DIFFUSION MODEL FOR SEMICONDUCTORS
- Defect measures of the vlasov-poisson system in the quasineutral regime
- On the basic equations for carrier transport in semiconductors
- On Existence, Uniqueness and Asymptotic Behavior of Solutions of the Basic Equations for Carrier Transport in Semiconductors
- Theory of the flow of electrons and holes in Germanium and other semiconductors
- Convergence of Nonlinear Schrödinger–Poisson Systems to the Compressible Euler Equations
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- Quasi-neutral limit of a nonlinear drift diffusion model for semiconductors
- QUASINEUTRAL LIMIT OF THE DRIFT-DIFFUSION MODEL FOR SEMICONDUCTORS WITH GENERAL INITIAL DATA
- A Singularly Perturbed Boundary Value Problem Modelling a Semiconductor Device
- On singular limits of mean-field equations.
- An Asymptotic Analysis of a Transient p-n-Junction Model
Cited In (20)
- Quasineutral limit of the multi-dimensional drift-diffusion models for semiconductors with PN-junctions
- QUASINEUTRAL LIMIT OF THE DRIFT-DIFFUSION MODEL FOR SEMICONDUCTORS WITH GENERAL INITIAL DATA
- Quasi-neutral limit to the drift-diffusion models for semiconductors with physical contact-insulating boundary conditions and the general sign-changing doping profile
- A generalized Poisson-Nernst-Planck-Navier-Stokes model on the fluid with the crowded charged particles: derivation and its well-posedness
- A review on small Debye length and quasi-neutral limits in macroscopic models for charged fluids
- Well-posedness on a new hydrodynamic model of the fluid with the dilute charged particles
- Optimal decay rates of the solution for generalized Poisson-Nernst-Planck-Navier-Stokes equations in \(\mathbb{R}^3\)
- Debye layer in Poisson-Boltzmann model with isolated singularities
- Quasi-neutral limit and the initial layer problem of the drift-diffusion model
- Quasi-neutral limit to the drift-diffusion models for semiconductors with physical contact-insulating boundary conditions
- Quasineutral limit of a standard drift diffusion model for semiconductors.
- Quasineutral limit of a time-dependent drift-diffusion-Poisson model for p-n junction semiconductor devices
- Quasi-neutral Limit of the Drift Diffusion Models for Semiconductors: The Case of General Sign-Changing Doping Profile
- Mixed layer problem and quasineutral limit of the bipolar drift-diffusion model with different mobilities
- Quasi-neutral limit of the drift-diffusion model for semiconductors with general sign-changing doping profile
- DIFFUSIVE TRANSPORT OF PARTIALLY QUANTIZED PARTICLES: L log L SOLUTIONS
- Quasi-neutral limit of the multidimensional drift-diffusion models for semiconductors
- The limiting problem of the drift-diffusion-Poisson model with discontinuous p-n-junctions
- On the well-posedness and decay rates of solutions to the Poisson-Nernst-Planck-Navier-Stokes system
- GLOBAL EXISTENCE AND ASYMPTOTIC BEHAVIOR FOR A SEMICONDUCTOR DRIFT-DIFFUSION-POISSON MODEL
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