Quasi-neutral limit of the drift-diffusion model for semiconductors with general sign-changing doping profile

DOI10.1007/s11425-008-0039-6zbMath1186.35016MaRDI QIDQ2519323

Shu Wang, Ling Hsiao, Qiang Chang Ju

Publication date: 26 January 2009

Published in: Science in China. Series A (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1007/s11425-008-0039-6

zbMATH Keywords

quasi-neutral limit; drift-diffusion equations; multiple scaling asymptotic expansions

Mathematics Subject Classification ID

35B40: Asymptotic behavior of solutions to PDEs

35K57: Reaction-diffusion equations

35C20: Asymptotic expansions of solutions to PDEs

82D37: Statistical mechanics of semiconductors

76X05: Ionized gas flow in electromagnetic fields; plasmic flow

Related Items

QUASI-NEUTRAL LIMIT OF THE MULTIDIMENSIONAL DRIFT-DIFFUSION MODELS FOR SEMICONDUCTORS

Cites Work

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• Quasi-neutral Limit of the Drift Diffusion Models for Semiconductors: The Case of General Sign-Changing Doping Profile
• On singular limits of mean-field equations.