On Maxwellian equilibria of insulated semiconductors
From MaRDI portal
Publication:1584704
DOI10.4171/IFB/23zbMath0961.35158MaRDI QIDQ1584704
Christian Schmeiser, Jean Dolbeault, Luis A. Caffarelli, Peter Alexander Markowich
Publication date: 17 January 2001
Published in: Interfaces and Free Boundaries (Search for Journal in Brave)
existenceuniquenessequilibriumsemiconductorhomogeneous Neumann boundary conditionscharge neutralitysemilinear elliptic integrodifferential equation
PDEs in connection with optics and electromagnetic theory (35Q60) Integro-partial differential equations (45K05) Free boundary problems for PDEs (35R35) Motion of charged particles (78A35)
Related Items
Regularity of local minimizers of the interaction energy via obstacle problems, Asymptotic profile in a multi-dimensional stationary nonisentropic hydrodynamic semiconductor model, Asymptotic profile in a one-dimensional steady-state nonisentropic hydrodynamic model for semiconductors, Quasi-neutral limit to the drift-diffusion models for semiconductors with physical contact-insulating boundary conditions, Some free boundary problems involving non-local diffusion and aggregation, Large-time behavior of solutions to Vlasov-Poisson-Fokker-Planck equations: from evanescent collisions to diffusive limit, The model reduction of the Vlasov–Poisson–Fokker–Planck system to the Poisson–Nernst–Planck system via the Deep Neural Network Approach, Quasi-neutral limit to the drift-diffusion models for semiconductors with physical contact-insulating boundary conditions and the general sign-changing doping profile, Quasineutral limit of a time-dependent drift-diffusion-Poisson model for p-n junction semiconductor devices, Quasi-neutral limit of the drift-diffusion model for semiconductors with general sign-changing doping profile, Anisotropic Boltzmann-Gibbs dynamics of strongly magnetized Vlasov-Fokker-Planck equations, On obstacle problems for non coercive linear operators
