Quasi-neutral limit to the drift-diffusion models for semiconductors with physical contact-insulating boundary conditions
DOI10.1016/J.JDE.2010.08.029zbMATH Open1213.35055OpenAlexW2060485292MaRDI QIDQ615977FDOQ615977
Authors: Sumit K. Garg 
Publication date: 7 January 2011
Published in: Journal of Differential Equations (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1016/j.jde.2010.08.029
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energy estimatesone space dimensionsmall Debye lengthboundary layermatched asymptotic analysisill-prepared boundary dataphysical contact-insulating boundary conditionswell prepared boundary
Asymptotic behavior of solutions to PDEs (35B40) Singular perturbations in context of PDEs (35B25) Reaction-diffusion equations (35K57) Statistical mechanics of semiconductors (82D37)
Cites Work
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- convergence of the vlasov-poisson system to the incompressible euler equations
- On Maxwellian equilibria of insulated semiconductors
- Quasineutral Limit of Euler–Poisson System with and without Viscosity
- An Asymptotic Analysis of One-Dimensional Models of Semiconductor Devices
- A hierarchy of hydrodynamic models for plasmas. Quasi-neutral limits in the drift-diffusion equations
- On Existence, Uniqueness and Asymptotic Behavior of Solutions of the Basic Equations for Carrier Transport in Semiconductors
- QUASINEUTRAL LIMIT OF THE MULTI-DIMENSIONAL DRIFT-DIFFUSION-POISSON MODELS FOR SEMICONDUCTORS WITH PN-JUNCTIONS
- Quasi-neutral limit of a nonlinear drift diffusion model for semiconductors
- Quasi-neutral Limit of the Drift Diffusion Models for Semiconductors: The Case of General Sign-Changing Doping Profile
- Quasineutral limit of a time-dependent drift-diffusion-Poisson model for p-n junction semiconductor devices
- QUASINEUTRAL LIMIT OF THE DRIFT-DIFFUSION MODEL FOR SEMICONDUCTORS WITH GENERAL INITIAL DATA
- Quasi-neutral limit of the multidimensional drift-diffusion models for semiconductors
- Title not available (Why is that?)
- A Singular Perturbation Analysis of the Fundamental Semiconductor Device Equations
- A Singularly Perturbed Boundary Value Problem Modelling a Semiconductor Device
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Cited In (10)
- Quasi-neutral limit to the drift-diffusion models for semiconductors with physical contact-insulating boundary conditions and the general sign-changing doping profile
- The initial time layer problem and the quasineutral limit in the semiconductor drift-diffusion model
- Boundary layer analysis in the semiclassical limit of a quantum drift-diffusion model
- Quasi-Neutral Limit to Steady-State Hydrodynamic Model of Semiconductors with Degenerate Boundary
- On Maxwellian equilibria of insulated semiconductors
- Mixed layer problem of a three-dimensional drift-diffusion model for semiconductors
- Mixed layer problem and quasineutral limit of the bipolar drift-diffusion model with different mobilities
- A system of convection-diffusion equations with small diffusion coefficient arising in semiconductor physics
- Quasi-neutral limit of the drift-diffusion model for semiconductors with general sign-changing doping profile
- The limiting problem of the drift-diffusion-Poisson model with discontinuous p-n-junctions
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