Quasi-neutral limit to the drift-diffusion models for semiconductors with physical contact-insulating boundary conditions
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Publication:615977
DOI10.1016/j.jde.2010.08.029zbMath1213.35055MaRDI QIDQ615977
Publication date: 7 January 2011
Published in: Journal of Differential Equations (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1016/j.jde.2010.08.029
energy estimates; boundary layer; one space dimension; small Debye length; matched asymptotic analysis; ill-prepared boundary data; physical contact-insulating boundary conditions; well prepared boundary
35B40: Asymptotic behavior of solutions to PDEs
35B25: Singular perturbations in context of PDEs
35K57: Reaction-diffusion equations
82D37: Statistical mechanics of semiconductors
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Quasi-neutral limit to the drift-diffusion models for semiconductors with physical contact-insulating boundary conditions and the general sign-changing doping profile, Mixed layer problem and quasineutral limit of the bipolar drift-diffusion model with different mobilities
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