The limiting problem of the drift-diffusion-Poisson model with discontinuous p-n-junctions

DOI10.1016/J.JMAA.2008.05.058MaRDI QIDQ936580zbMATH OpenOpenAlexFDO

Authors Hongjun Yuan, Chunling Cao, Songzhe Lian, Wenjie Gao

Publication date 14 August 2008

Published in Journal of Mathematical Analysis and Applications (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1016/j.jmaa.2008.05.058

zbMATH Keywords

elliptic-parabolic systemdiscontinuous doping profile

Mathematics Subject Classification ID

Asymptotic behavior of solutions to PDEs (35B40) PDEs with randomness, stochastic partial differential equations (35R60) Statistical mechanics of semiconductors (82D37)

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Cites work

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• A hierarchy of hydrodynamic models for plasmas. Quasi-neutral limits in the drift-diffusion equations
• An Asymptotic Analysis of a Transient p-n-Junction Model
• Compact sets in the space \(L^ p(0,T;B)\)
• QUASINEUTRAL LIMIT OF THE DRIFT-DIFFUSION MODEL FOR SEMICONDUCTORS WITH GENERAL INITIAL DATA
• Quasi-neutral Limit of the Drift Diffusion Models for Semiconductors: The Case of General Sign-Changing Doping Profile
• Quasi-neutral limit of a nonlinear drift diffusion model for semiconductors
• Quasineutral limit of a time-dependent drift-diffusion-Poisson model for p-n junction semiconductor devices
• The initial time layer problem and the quasineutral limit in the semiconductor drift-diffusion model
• Theory of the flow of electrons and holes in Germanium and other semiconductors

Cited in

(2)

• Drift-diffusion in electrochemistry: thresholds for boundary flux and discontinuous optical generation
• Analysis of a drift-diffusion-Schrödinger-Poisson model

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