Quasi-neutral Limit of the Drift Diffusion Models for Semiconductors: The Case of General Sign-Changing Doping Profile

DOI10.1137/S0036141004440010zbMath1103.76070OpenAlexW2080093058MaRDI QIDQ5470624

Zhouping Xin, Shu Wang, Peter Alexander Markowich

Publication date: 31 May 2006

Published in: SIAM Journal on Mathematical Analysis (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1137/s0036141004440010

zbMATH Keywords

singular perturbationone space dimensionquasi-neutral limitclassical energy methodsdrift diffusion equationsmultiple scaling asymptotic expansions\(\lambda\)-weighted Lyapunov-type functionalinitial and boundary layersvanishing Debye length limit

Mathematics Subject Classification ID

Asymptotic behavior of solutions to PDEs (35B40) Singular perturbations in context of PDEs (35B25) Reaction-diffusion equations (35K57) Statistical mechanics of semiconductors (82D37) Ionized gas flow in electromagnetic fields; plasmic flow (76X05)

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