The Quasi-Neutral Limit in Optimal Semiconductor Design

DOI10.1137/15M1051877zbMATH Open1372.35029arXiv1512.01116OpenAlexW3105795890MaRDI QIDQ5348482FDOQ5348482

Claudia Totzeck, Oliver Tse, René Pinnau

Publication date: 18 August 2017

Published in: SIAM Journal on Control and Optimization (Search for Journal in Brave)

Abstract: We study the quasi-neutral limit in an optimal semiconductor design problem constrained by a nonlinear, nonlocal Poisson equation modelling the drift diffusion equations in thermal equilibrium. While a broad knowledge on the asymptotic links between the different models in the semiconductor model hierarchy exists, there are so far no results on the corresponding optimization problems available. Using a variational approach we end up with a bi-level optimization problem, which is thoroughly analysed. Further, we exploit the concept of Gamma-convergence to perform the quasi-neutral limit for the minima and minimizers. This justifies the construction of fast optimization algorithms based on the zero space charge approximation of the drift-diffusion model. The analytical results are underlined by numerical experiments confirming the feasibility of our approach.

Full work available at URL: https://arxiv.org/abs/1512.01116

zbMATH Keywords

\(\Gamma\)-convergencedrift-diffusion modelfirst-order necessary conditionnonlinear nonlocal Poisson equation

Mathematics Subject Classification ID

Asymptotic behavior of solutions to PDEs (35B40) Variational methods for elliptic systems (35J50) Homogenization in context of PDEs; PDEs in media with periodic structure (35B27) PDEs in connection with quantum mechanics (35Q40) PDEs in connection with control and optimization (35Q93) Existence theories for optimal control problems involving partial differential equations (49J20) Optimality conditions for problems involving partial differential equations (49K20)

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Uses Software

• FEniCS
• SyFi

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