Modeling and Analysis of Laser-Beam-Induced Current Images in Semiconductors
DOI10.1137/0153012zbMATH Open0772.35072OpenAlexW2061773033MaRDI QIDQ5286311FDOQ5286311
Authors: W. Fang, Kazufumi Ito, Stavros N. Busenberg 
Publication date: 29 June 1993
Published in: SIAM Journal on Applied Mathematics (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1137/0153012
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Cited In (16)
- Second-order approach to optimal semiconductor design
- Strict and approximate models of a scratch on the basis of the method of integral equations
- The Quasi-Neutral Limit in Optimal Semiconductor Design
- LBIC imaging of semiconductor arrays: the cross-sectional model
- Mathematical modeling of the dependences of the monochromatic cathodoluminescence intensity on the electron beam energy for a three-layer semiconductor structure
- On the stationary semiconductor equations arising in modeling an LBIC technique
- Forward lateral photovoltage scanning problem: perturbation approach and existence-uniqueness analysis
- EXISTENCE OF STATIONARY SOLUTIONS TO AN ENERGY DRIFT-DIFFUSION MODEL FOR SEMICONDUCTOR DEVICES
- A homogenization model for laser beam-induced current imaging and detection of non-uniform\-ities in semiconductor arrays
- Identifiability of Semiconductor Defects from LBIC Images
- Parameter Identification for Semiconductor Diodes by LBIC Imaging
- Numerical analysis of nonlinear model of excited carrier decay
- Explicit solutions for LBIC signals in semiconductors by asymptotic method
- AN OPTIMAL CONTROL APPROACH TO SEMICONDUCTOR DESIGN
- MATHEMATICAL AND NUMERICAL ANALYSIS OF THE SPREADING RESISTANCE OF SEMICONDUCTOR BURIED RIDGE STRIPE LASERS
- On the \(N\)-dimensional stationary drift-diffusion semiconductor equations
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