Modeling and Analysis of Laser-Beam-Induced Current Images in Semiconductors

DOI10.1137/0153012zbMath0772.35072OpenAlexW2061773033MaRDI QIDQ5286311

Weifu Fang, Kazufumi Ito, Stavros N. Busenberg

Publication date: 29 June 1993

Published in: SIAM Journal on Applied Mathematics (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1137/0153012

zbMATH Keywords

approximate modelnondestructive optical testing techniquestationary basic semiconductor equationswellposedness of the model equations

Mathematics Subject Classification ID

PDEs in connection with optics and electromagnetic theory (35Q60) Inverse problems for PDEs (35R30) Nonlinear elliptic equations (35J60)

Related Items (9)

EXISTENCE OF STATIONARY SOLUTIONS TO AN ENERGY DRIFT-DIFFUSION MODEL FOR SEMICONDUCTOR DEVICES ⋮ AN OPTIMAL CONTROL APPROACH TO SEMICONDUCTOR DESIGN ⋮ On the stationary semiconductor equations arising in modeling an LBIC technique ⋮ The Quasi-Neutral Limit in Optimal Semiconductor Design ⋮ Second-order approach to optimal semiconductor design ⋮ LBIC imaging of semiconductor arrays: the cross-sectional model ⋮ A homogenization model for laser beam-induced current imaging and detection of non-uniform\-ities in semiconductor arrays ⋮ Explicit solutions for LBIC signals in semiconductors by asymptotic method ⋮ On the \(N\)-dimensional stationary drift-diffusion semiconductor equations

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