Semiconductor device optimization in the presence of thermal effects

DOI10.1002/ZAMM.201100171zbMATH Open1274.74093OpenAlexW1984724300MaRDI QIDQ2856973FDOQ2856973

Authors: Concetta R. Drago, Nicole Marheineke, René Pinnau 

Publication date: 31 October 2013

Published in: ZAMM. Zeitschrift für Angewandte Mathematik und Mechanik (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1002/zamm.201100171

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zbMATH Keywords

energy transport modelsemiconductor designfast optimal designGaussian doping profiles

Mathematics Subject Classification ID

Thermal effects in solid mechanics (74F05) Electromagnetic effects in solid mechanics (74F15)

Cites Work

• On a hierarchy of macroscopic models for semiconductors
• AN OPTIMAL CONTROL APPROACH TO SEMICONDUCTOR DESIGN
• A system of parabolic equations in nonequilibrium thermodynamics including thermal and electrical effects
• Title not available (Why is that?)
• Fast Optimal Design of Semiconductor Devices
• An energy-transport model for semiconductors derived from the Boltzmann equation.
• On/off-state design of semiconductor doping profiles
• A GLOBALLY CONVERGENT GUMMEL MAP FOR OPTIMAL DOPANT PROFILING

Cited In (4)

• An optimization approach to a finite dimensional parameter estimation problem in semiconductor device design
• Optimal Control for Semiconductor Diode Design based on the MEP Energy-Transport Model
• Optimization of temperature of polysilicon rods
• The quasi-neutral limit in optimal semiconductor design

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