Semiconductor device optimization in the presence of thermal effects

DOI10.1002/zamm.201100171zbMath1274.74093OpenAlexW1984724300MaRDI QIDQ2856973

Concetta Drago, Nicole Marheineke, René Pinnau

Publication date: 31 October 2013

Published in: ZAMM - Journal of Applied Mathematics and Mechanics / Zeitschrift für Angewandte Mathematik und Mechanik (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1002/zamm.201100171

zbMATH Keywords

energy transport modelsemiconductor designfast optimal designGaussian doping profiles

Mathematics Subject Classification ID

Thermal effects in solid mechanics (74F05) Electromagnetic effects in solid mechanics (74F15)

Related Items (2)

Optimal Control for Semiconductor Diode Design based on the MEP Energy-Transport Model ⋮ The Quasi-Neutral Limit in Optimal Semiconductor Design

Cites Work

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• On/off-state design of semiconductor doping profiles
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• A GLOBALLY CONVERGENT GUMMEL MAP FOR OPTIMAL DOPANT PROFILING
• Fast Optimal Design of Semiconductor Devices
• AN OPTIMAL CONTROL APPROACH TO SEMICONDUCTOR DESIGN
• On a hierarchy of macroscopic models for semiconductors

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