Semiconductor device optimization in the presence of thermal effects

DOI10.1002/ZAMM.201100171MaRDI QIDQ2856973zbMATHOpenAlexFDO

Authors Concetta R. Drago, Nicole Marheineke, René Pinnau

Publication date 31 October 2013

Published in ZAMM. Zeitschrift für Angewandte Mathematik und Mechanik (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1002/zamm.201100171

zbMATH Keywords

energy transport modelsemiconductor designfast optimal designGaussian doping profiles

Mathematics Subject Classification ID

Thermal effects in solid mechanics (74F05) Electromagnetic effects in solid mechanics (74F15)

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Cites work

• scientific article; zbMATH DE number 1230507 (Why is no real title available?)
• A GLOBALLY CONVERGENT GUMMEL MAP FOR OPTIMAL DOPANT PROFILING
• A system of parabolic equations in nonequilibrium thermodynamics including thermal and electrical effects
• AN OPTIMAL CONTROL APPROACH TO SEMICONDUCTOR DESIGN
• An energy-transport model for semiconductors derived from the Boltzmann equation.
• Fast Optimal Design of Semiconductor Devices
• On a hierarchy of macroscopic models for semiconductors
• On/off-state design of semiconductor doping profiles

Cited in

(4)

• Optimization of temperature of polysilicon rods
• An optimization approach to a finite dimensional parameter estimation problem in semiconductor device design
• The quasi-neutral limit in optimal semiconductor design
• Optimal Control for Semiconductor Diode Design based on the MEP Energy-Transport Model

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