Reconstruction of Semiconductor Doping Profile from Laser-Beam-Induced Current Image

DOI10.1137/S0036139992234804zbMath0808.35170MaRDI QIDQ4310866

Kazufumi Ito, Weifu Fang

Publication date: 5 March 1995

Published in: SIAM Journal on Applied Mathematics (Search for Journal in Brave)

zbMATH Keywords

algorithmleast squares formulationlaser-beam-induced currentreconstruction of a semiconductor doping profile

Mathematics Subject Classification ID

PDEs in connection with optics and electromagnetic theory (35Q60) Inverse problems for PDEs (35R30)

Related Items (6)

The Quasi-Neutral Limit in Optimal Semiconductor Design ⋮ Risk-averse optimal control of semilinear elliptic PDEs ⋮ Second-order approach to optimal semiconductor design ⋮ Recovering doping profiles in semiconductor devices with the Boltzmann-Poisson model ⋮ A homogenization model for laser beam-induced current imaging and detection of non-uniform\-ities in semiconductor arrays ⋮ Explicit solutions for LBIC signals in semiconductors by asymptotic method

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