Quasi-neutral limit to the drift-diffusion models for semiconductors with physical contact-insulating boundary conditions and the general sign-changing doping profile

DOI10.1016/J.NA.2009.12.041MaRDI QIDQ960886zbMATH OpenOpenAlexFDO

Authors B. E. Eshmatov

Publication date 29 March 2010

Published in Nonlinear Analysis. Theory, Methods \& Applications. Series A: Theory and Methods (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1016/j.na.2009.12.041

zbMATH Keywords

one space dimensionboundary layerinitial layercontact-insulating boundary conditionsentropy-energy method

Mathematics Subject Classification ID

Asymptotic behavior of solutions to PDEs (35B40) Singular perturbations in context of PDEs (35B25) Reaction-diffusion equations (35K57) PDEs in connection with optics and electromagnetic theory (35Q60) Statistical mechanics of semiconductors (82D37)

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Cites work

• scientific article; zbMATH DE number 3150729 (Why is no real title available?)
• scientific article; zbMATH DE number 108361 (Why is no real title available?)
• A Singular Perturbation Analysis of the Fundamental Semiconductor Device Equations
• A Singularly Perturbed Boundary Value Problem Modelling a Semiconductor Device
• An Asymptotic Analysis of One-Dimensional Models of Semiconductor Devices
• On Existence, Uniqueness and Asymptotic Behavior of Solutions of the Basic Equations for Carrier Transport in Semiconductors
• On Maxwellian equilibria of insulated semiconductors
• On singular limits of mean-field equations.
• QUASINEUTRAL LIMIT OF THE DRIFT-DIFFUSION MODEL FOR SEMICONDUCTORS WITH GENERAL INITIAL DATA
• QUASINEUTRAL LIMIT OF THE MULTI-DIMENSIONAL DRIFT-DIFFUSION-POISSON MODELS FOR SEMICONDUCTORS WITH PN-JUNCTIONS
• Quasi-neutral Limit of the Drift Diffusion Models for Semiconductors: The Case of General Sign-Changing Doping Profile
• Quasi-neutral limit of a nonlinear drift diffusion model for semiconductors
• Quasi-neutral limit to the drift-diffusion models for semiconductors with physical contact-insulating boundary conditions
• Quasineutral Limit of Euler–Poisson System with and without Viscosity
• Quasineutral limit of a time-dependent drift-diffusion-Poisson model for p-n junction semiconductor devices
• The initial time layer problem and the quasineutral limit in the semiconductor drift-diffusion model

Cited in

(3)

• Quasi-neutral limit of the drift-diffusion model for semiconductors with general sign-changing doping profile
• Quasi-neutral limit to the drift-diffusion models for semiconductors with physical contact-insulating boundary conditions
• Mixed layer problem and quasineutral limit of the bipolar drift-diffusion model with different mobilities

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