Quasi-neutral limit to the drift-diffusion models for semiconductors with physical contact-insulating boundary conditions and the general sign-changing doping profile
DOI10.1016/j.na.2009.12.041zbMath1185.35011OpenAlexW2013821937MaRDI QIDQ960886
Publication date: 29 March 2010
Published in: Nonlinear Analysis. Theory, Methods \& Applications. Series A: Theory and Methods (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1016/j.na.2009.12.041
boundary layerone space dimensioninitial layercontact-insulating boundary conditionsentropy-energy method
Asymptotic behavior of solutions to PDEs (35B40) PDEs in connection with optics and electromagnetic theory (35Q60) Singular perturbations in context of PDEs (35B25) Reaction-diffusion equations (35K57) Statistical mechanics of semiconductors (82D37)
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Cites Work
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