Quasi-neutral limit to the drift-diffusion models for semiconductors with physical contact-insulating boundary conditions and the general sign-changing doping profile
DOI10.1016/J.NA.2009.12.041zbMATH Open1185.35011OpenAlexW2013821937MaRDI QIDQ960886FDOQ960886
Authors: B. E. Eshmatov 
Publication date: 29 March 2010
Published in: Nonlinear Analysis. Theory, Methods \& Applications. Series A: Theory and Methods (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1016/j.na.2009.12.041
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one space dimensionboundary layerinitial layercontact-insulating boundary conditionsentropy-energy method
Asymptotic behavior of solutions to PDEs (35B40) Singular perturbations in context of PDEs (35B25) Reaction-diffusion equations (35K57) PDEs in connection with optics and electromagnetic theory (35Q60) Statistical mechanics of semiconductors (82D37)
Cites Work
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- On Maxwellian equilibria of insulated semiconductors
- Quasineutral Limit of Euler–Poisson System with and without Viscosity
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- QUASINEUTRAL LIMIT OF THE MULTI-DIMENSIONAL DRIFT-DIFFUSION-POISSON MODELS FOR SEMICONDUCTORS WITH PN-JUNCTIONS
- Quasi-neutral limit of a nonlinear drift diffusion model for semiconductors
- Quasi-neutral Limit of the Drift Diffusion Models for Semiconductors: The Case of General Sign-Changing Doping Profile
- Quasineutral limit of a time-dependent drift-diffusion-Poisson model for p-n junction semiconductor devices
- QUASINEUTRAL LIMIT OF THE DRIFT-DIFFUSION MODEL FOR SEMICONDUCTORS WITH GENERAL INITIAL DATA
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- A Singular Perturbation Analysis of the Fundamental Semiconductor Device Equations
- A Singularly Perturbed Boundary Value Problem Modelling a Semiconductor Device
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- Quasi-neutral limit to the drift-diffusion models for semiconductors with physical contact-insulating boundary conditions
Cited In (3)
- Quasi-neutral limit to the drift-diffusion models for semiconductors with physical contact-insulating boundary conditions
- Mixed layer problem and quasineutral limit of the bipolar drift-diffusion model with different mobilities
- Quasi-neutral limit of the drift-diffusion model for semiconductors with general sign-changing doping profile
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