A Singular Perturbation Analysis of the Fundamental Semiconductor Device Equations
DOI10.1137/0144064zbMATH Open0568.35007OpenAlexW2014463875MaRDI QIDQ3684483FDOQ3684483
Authors: Peter Alexander Markowich
Publication date: 1984
Published in: SIAM Journal on Applied Mathematics (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1137/0144064
Recommendations
- A Singular Perturbation Analysis of the Transient Semiconductor Device Equations
- A Singular Perturbation Analysis for the Transient Semiconductor Device Equations in One Space Dimension
- scientific article; zbMATH DE number 4065482
- A Singularly Perturbed Boundary Value Problem Modelling a Semiconductor Device
- scientific article; zbMATH DE number 4000478
- scientific article
- scientific article; zbMATH DE number 682478
- A QUALITATIVE ANALYSIS OF THE FUNDAMENTAL SEMICONDUCTOR DEVICE EQUATIONS
- A Singular Perturbation Analysis of Reverse-Biased Semiconductor Diodes
- scientific article; zbMATH DE number 4196464
a priori estimatesasymptotic behaviourexistencenumerical simulationsingular perturbation analysisweak solutionsmatched asymptotic expansionsNeumann-Dirichlet boundary conditionsfundamental semiconductor device equations
Electro- and magnetostatics (78A30) Singular perturbations in context of PDEs (35B25) Asymptotic expansions of solutions to PDEs (35C20) Nonlinear boundary value problems for linear elliptic equations (35J65)
Cited In (30)
- Analysis of singular transistor circuits using the orthogonal functions
- A QUALITATIVE ANALYSIS OF THE FUNDAMENTAL SEMICONDUCTOR DEVICE EQUATIONS
- Quasi-neutral limit to the drift-diffusion models for semiconductors with physical contact-insulating boundary conditions and the general sign-changing doping profile
- A Singular Perturbation Analysis of Reverse-Biased Semiconductor Diodes
- ASYMPTOTIC METHODS FOR TRANSIENT SEMICONDUCTOR DEVICE EQUATIONS
- Title not available (Why is that?)
- Singular perturbation analysis of the steady-state Poisson–Nernst–Planck system: Applications to ion channels
- A method for proving uniqueness theorems for the stationary semiconductor device and electrochemistry equations
- Two-dimensional modeling of electron flow through a poorly conducting layer
- Uniform Asymptotic Representation of Solutions of the Basic Semiconductor-Device Equations
- Perturbation approach to Ebers-Moll equations for transistor circuit analysis
- Uniform asymptotic error estimates for semiconductor device and electrochemistry equations
- A SENSITIVITY ANALYSIS OF THE STEADY STATE SEMICONDUCTOR DEVICE EQUATIONS
- Title not available (Why is that?)
- A Singular Perturbation Analysis of the Transient Semiconductor Device Equations
- Finite Element Approximation to Initial-Boundary Value Problems of the Semiconductor Device Equations with Magnetic Influence
- Global solutions to the coupled chemotaxis-fluid equations
- A Singular Perturbation Analysis for the Transient Semiconductor Device Equations in One Space Dimension
- Numerical Approximation of a Drift‐Diffusion Model for Semiconductors with Nonlinear Diffusion
- A Singularly Perturbed Boundary Value Problem Modelling a Semiconductor Device
- Singular perturbation theory applied to the electrochemistry equations in the case of electroneutrality
- Quasi-neutral limit to the drift-diffusion models for semiconductors with physical contact-insulating boundary conditions
- Simulation of visible and ultra-violet group-III nitride light emitting diodes
- Title not available (Why is that?)
- An analysis of the Scharfetter-Gummel box method for the stationary semiconductor device equations
- Title not available (Why is that?)
- Junction layer analysis in one-dimensional steady-state Euler-Poisson equations
- Boundary layer analysis and quasi-neutral limits in the drift-diffusion equations
- Title not available (Why is that?)
- An Asymptotic Analysis of One-Dimensional Models of Semiconductor Devices
This page was built for publication: A Singular Perturbation Analysis of the Fundamental Semiconductor Device Equations
Report a bug (only for logged in users!)Click here to report a bug for this page (MaRDI item Q3684483)