Numerical Approximation of a Drift‐Diffusion Model for Semiconductors with Nonlinear Diffusion
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Publication:5691223
DOI10.1002/zamm.19950751016zbMath0866.35056OpenAlexW2110017567MaRDI QIDQ5691223
Publication date: 24 July 1997
Published in: ZAMM - Journal of Applied Mathematics and Mechanics / Zeitschrift für Angewandte Mathematik und Mechanik (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1002/zamm.19950751016
Degenerate parabolic equations (35K65) Finite difference methods for initial value and initial-boundary value problems involving PDEs (65M06) Motion of charged particles (78A35)
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Cites Work
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- On steady state Euler-Poisson models for semiconductors
- The thermal equilibrium state of semiconductor devices
- A Singular Perturbation Analysis of the Fundamental Semiconductor Device Equations
- Some problems of the qualitative theory of non-linear degenerate second-order parabolic equations
- Two-Dimensional Exponential Fitting and Applications to Drift-Diffusion Models
- Vacuum and non‐vacuum solutions of the quasi‐hydrodynamic semiconductor model in thermal equilibrium
- Semiconductor Equations for variable Mobilities Based on Boltzmann Statistics or Fermi-Dirac Statistics
- The free boundary problem of a semiconductor in thermal equilibrium
- A Singularly Perturbed Boundary Value Problem Modelling a Semiconductor Device
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