Discrete duality finite volume schemes for two‐dimensional drift‐diffusion and energy‐transport models
DOI10.1002/fld.1393zbMath1154.82034OpenAlexW2043198279MaRDI QIDQ3596552
Publication date: 28 January 2009
Published in: International Journal for Numerical Methods in Fluids (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1002/fld.1393
PDEs in connection with optics and electromagnetic theory (35Q60) Statistical mechanics of semiconductors (82D37) Finite element, Rayleigh-Ritz and Galerkin methods for initial value and initial-boundary value problems involving PDEs (65M60) Transport processes in time-dependent statistical mechanics (82C70) Mesh generation, refinement, and adaptive methods for the numerical solution of initial value and initial-boundary value problems involving PDEs (65M50)
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Cites Work
- Unnamed Item
- Numerical simulation of semiconductor devices
- Approximation of diffusion operators with discontinuous tensor coefficients on distorted meshes.
- A finite volume method for the approximation of diffusion operators on distorted meshes
- Numerical discretization of energy-transport model for semiconductors using high-order compact schemes
- Convergence rate of a finite volume scheme for a two dimensional convection-diffusion problem
- A Discretization Scheme for a Quasi-Hydrodynamic Semiconductor Model
- A Mixed Finite-Element Discretization of the Energy-Transport Model for Semiconductors
- The energy transport and the drift diffusion equations as relaxation limits of the hydrodynamic model for semiconductors
- Numerical Discretization of Energy-Transport Models for Semiconductors with Nonparabolic Band Structure
- On a hierarchy of macroscopic models for semiconductors
- FINITE VOLUME APPROXIMATION FOR DEGENERATE DRIFT-DIFFUSION SYSTEM IN SEVERAL SPACE DIMENSIONS
- Numerical Approximation of a Drift‐Diffusion Model for Semiconductors with Nonlinear Diffusion
- A finite volume method for the Laplace equation on almost arbitrary two-dimensional grids