Numerical simulation of semiconductor devices

From MaRDI portal
Publication:912746

DOI10.1016/0045-7825(89)90044-3zbMath0698.76125OpenAlexW2085322600WikidataQ57386808 ScholiaQ57386808MaRDI QIDQ912746

Luisa Donatella Marini, Paola Pietra, Franco Brezzi

Publication date: 1989

Published in: Computer Methods in Applied Mechanics and Engineering (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1016/0045-7825(89)90044-3



Related Items

Consistency and convergence for a family of finite volume discretizations of the Fokker–Planck operator, Quasi‐variational inequality and shape optimization for solution of a free boundary problem, Model reduction-based initialization methods for solving the Poisson-Nernst-Planck equations in three-dimensional ion channel simulations, Exponentially fitted discontinuous Galerkin schemes for singularly perturbed problems, Simulation of submicron pseudomorphic AlGaAs/InGaAs/GaAs high electron mobility transistors, A class of finite element methods with averaging techniques for solving the three-dimensional drift-diffusion model in semiconductor device simulations, Modeling and Simulation of Organic Solar Cells, A structure-preserving finite element discretization for the time-dependent Nernst-Planck equation, Unnamed Item, Numerical simulation of tunneling effects in nanoscale semiconductor devices using quantum corrected drift-diffusion models, Massively parallel methods for semiconductor device modelling, FINITE VOLUME APPROXIMATION FOR DEGENERATE DRIFT-DIFFUSION SYSTEM IN SEVERAL SPACE DIMENSIONS, Energy transport in semiconductor devices, Metodi misti di exponential fitting per le equazioni di continuita' della corrente, Newton Solvers for Drift-Diffusion and Electrokinetic Equations, Linearized conservative finite element methods for the Nernst-Planck-Poisson equations, Hierarchical electrochemical modeling and simulation of bio-hybrid interfaces, MIXED FINITE ELEMENTS IN MAGNETOSTATICS, A structure preserving hybrid finite volume scheme for semiconductor models with magnetic field on general meshes, A Stable Mimetic Finite-Difference Method for Convection-Dominated Diffusion Equations, Enriched residual free bubbles for semiconductor device simulation, A hybrid mixed finite element method for convection-diffusion-reaction equation with local exponential fitting technique, A weighted hybridizable discontinuous Galerkin method for drift-diffusion problems, Positivity preserving discretization of time dependent semiconductor drift-diffusion equations, A new control volume finite element method for the stable and accurate solution of the drift-diffusion equations on general unstructured grids, Generalized Scharfetter-Gummel schemes for electro-thermal transport in degenerate semiconductors using the Kelvin formula for the Seebeck coefficient, Analytical and numerical study of photocurrent transients in organic polymer solar cells, A conservative and monotone mixed-hybridized finite element approximation of transport problems in heterogeneous domains, On the existence of solutions for a drift-diffusion system arising in corrosion modeling, On the stable solution of transient convection-diffusion equations, A computational framework to investigate charge transport in heterogeneous organic photovoltaic devices, 3-D mixed finite element schemes for charge transport equations, Flux-upwind stabilization of the discontinuous Petrov–Galerkin formulation with Lagrange multipliers for advection-diffusion problems, An a priori error estimate for a monotone mixed finite-element discretization of a convection-diffusion problem, A High-Order Staggered Meshless Method for Elliptic Problems, Inverse average type tetrahedral finite-element schemes for the stationary semiconductor device equations, Numerical convergence of a parameterisation method for the solution of a highly anisotropic two-dimensional elliptic problem, An analysis of monotonicity conditions in the mixed hybrid finite element method on unstructured triangulations, Quantum-corrected drift-diffusion models for transport in semiconductor devices, Discrete duality finite volume schemes for two‐dimensional drift‐diffusion and energy‐transport models, NEW MIXED FINITE ELEMENT SCHEMES FOR CURRENT CONTINUITY EQUATIONS, Local existence result in time for a drift-diffusion system with Robin boundary conditions, A triangular mixed finite element method for the stationary semiconductor device equations, Three-dimensional simulation of biological ion channels under mechanical, thermal and fluid forces, Numerical solutions of Euler-Poisson systems for potential flows, Projection finite element methods for semiconductor device equations, Unnamed Item, Residual type a posteriori error estimates for the time-dependent Poisson-Nernst-Planck equations, The patch test as a validation of a new finite element for the solution of convection-diffusion equations, A monotonic scheme for advection-diffusion problems, An analysis of a conforming exponentially fitted finite element method for a convection-diffusion problem



Cites Work