Energy transport in semiconductor devices
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Publication:2929098
DOI10.1080/13873951003679017zbMATH Open1298.35106OpenAlexW2142825673MaRDI QIDQ2929098FDOQ2929098
Authors: Ansgar Jüngel 
Publication date: 11 November 2014
Published in: Mathematical and Computer Modelling of Dynamical Systems (Search for Journal in Brave)
Full work available at URL: http://hdl.handle.net/10.1080/13873951003679017
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semiconductorsenergy-transport equationsfinite-element approximationexistence analysisweak sequential stability
Nonlinear elliptic equations (35J60) Nonlinear parabolic equations (35K55) Finite element, Rayleigh-Ritz, Galerkin and collocation methods for ordinary differential equations (65L60) Finite element, Rayleigh-Ritz and Galerkin methods for initial value and initial-boundary value problems involving PDEs (65M60) Statistical mechanics of semiconductors (82D37)
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Cited In (21)
- Title not available (Why is that?)
- Thermodynamic design of energy models of semiconductor devices
- A Mixed Finite-Element Discretization of the Energy-Transport Model for Semiconductors
- Title not available (Why is that?)
- Hot electron transport in semiconductors
- Existence analysis for a simplified transient energy-transport model for semiconductors
- Quasi-hydrodynamic semiconductor equations
- An asymptotic-preserving scheme for the semiconductor Boltzmann equation toward the energy-transport limit
- An energy transport model describing heat generation and conduction in silicon semiconductors
- Title not available (Why is that?)
- Group classification of an energy transport model for semiconductors with crystal heating
- Analysis of a bipolar energy-transport model for a metal-oxide-semiconductor diode
- Decay to equilibrium for energy-reaction-diffusion systems
- Global existence analysis for degenerate energy-transport models for semiconductors
- Lyapunov functionals, weak sequential stability, and uniqueness analysis for energy-transport systems
- Energy-transport models for spin transport in ferromagnetic semiconductors
- A posteriori error control in numerical simulations of semiconductor nanodevices
- An asymptotic-preserving scheme for the semiconductor Boltzmann equation with two-scale collisions: a splitting approach
- A hierarchy of hydrodynamic models for silicon carbide semiconductors
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- Discretization of semiconductor device problems. II
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