An iterative method for adaptive finite element solutions of an energy transport model of semiconductor devices
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Publication:1405166
DOI10.1016/S0021-9991(03)00247-XzbMATH Open1032.82039OpenAlexW2094360637MaRDI QIDQ1405166FDOQ1405166
Authors: Ren-Chuen Chen, Jinn-Liang Liu 
Publication date: 25 August 2003
Published in: Journal of Computational Physics (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1016/s0021-9991(03)00247-x
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Cited In (14)
- An Adaptive Mixed Scheme for Energy-Transport Simulations of Field-Effect Transistors
- Energy transport in semiconductor devices
- An adaptive remeshing technique based on hierarchical error estimates for simulation of semiconductor devices
- Monotone iterative methods for the adaptive finite element solution of semiconductor equations
- A two-dimensional thin-film transistor simulation using adaptive computing technique
- A quantum corrected Poisson-Nernst-Planck model for biological ion channels
- Adaptive energy discretization of the semiconductor Boltzmann equation
- A new parallel adaptive finite volume method for the numerical simulation of semiconductor devices
- An accelerated monotone iterative method for the quantum-corrected energy transport model
- A posteriori error control in numerical simulations of semiconductor nanodevices
- A quantum corrected energy-transport model for nanoscale semiconductor devices
- Transient electrohydrodynamic flow with concentration-dependent fluid properties: modelling and energy-stable numerical schemes
- Adaptation in coupled problems
- Nonstationary monotone iterative methods for nonlinear partial differential equations
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