An iterative method for adaptive finite element solutions of an energy transport model of semiconductor devices
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Publication:1405166
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- A finite element formulation for the hydrodynamic semiconductor device equations
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Cited in
(14)- Energy transport in semiconductor devices
- An accelerated monotone iterative method for the quantum-corrected energy transport model
- Adaptive energy discretization of the semiconductor Boltzmann equation
- A new parallel adaptive finite volume method for the numerical simulation of semiconductor devices
- A quantum corrected energy-transport model for nanoscale semiconductor devices
- Adaptation in coupled problems
- Nonstationary monotone iterative methods for nonlinear partial differential equations
- A two-dimensional thin-film transistor simulation using adaptive computing technique
- A posteriori error control in numerical simulations of semiconductor nanodevices
- Monotone iterative methods for the adaptive finite element solution of semiconductor equations
- An adaptive remeshing technique based on hierarchical error estimates for simulation of semiconductor devices
- Transient electrohydrodynamic flow with concentration-dependent fluid properties: modelling and energy-stable numerical schemes
- An Adaptive Mixed Scheme for Energy-Transport Simulations of Field-Effect Transistors
- A quantum corrected Poisson-Nernst-Planck model for biological ion channels
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