An Approximate Newton Method for the Solution of the Basic Semiconductor Device Equations

DOI10.1137/0726030zbMATH Open0667.65098OpenAlexW2090509184MaRDI QIDQ3819954FDOQ3819954

Authors: Christian Ringhofer, Christian Schmeiser 

Publication date: 1989

Published in: SIAM Journal on Numerical Analysis (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1137/0726030

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zbMATH Keywords

singular perturbationsiterative methodlocal convergenceNewton's methodGummel cycle iterationssteady state fundamental semiconductor device equations

Mathematics Subject Classification ID

Technical applications of optics and electromagnetic theory (78A55) Numerical computation of solutions to systems of equations (65H10) Singular perturbations in context of PDEs (35B25) Partial differential equations of mathematical physics and other areas of application (35Q99) Spectral, collocation and related methods for boundary value problems involving PDEs (65N35) Applications to the sciences (65Z05)

Cited In (25)

• Stability of steady-state for 3-D hydrodynamic model of unipolar semiconductor with ohmic contact boundary in hollow ball
• On the Iterative Solution of van Roosbroeck's Equations
• The phase plane method for the solution of equations applied to semiconductor device modelling
• Analysis of a new implicit solver for a semiconductor model
• A review of hydrodynamical models for semiconductors: Asymptotic behavior
• Large time behavior of solutions of the bipolar hydrodynamical model for semiconductors.
• Monotone iterative methods for the adaptive finite element solution of semiconductor equations
• On a one-dimensional steady-state hydrodynamic model for semiconductors
• Finite Element Approximation to Initial-Boundary Value Problems of the Semiconductor Device Equations with Magnetic Influence
• Subsonic steady-states for bipolar hydrodynamic model for semiconductors
• Almost Newton method for large flux steady-state of 1D Poisson--Nernst--Planck equations
• Numerical methods for high-dimensional probability density function equations
• Convergence of a finite element method for the drift-diffusion semiconductor device equations: the zero diffusion case
• New additive difference method for solving semiconductor problems
• From the Boltzmann equation to generalized kinetic models in applied sciences
• Zero Debye length asymptotic of the quantum hydrodynamic model for semiconductors
• An accelerated monotone iterative method for the quantum-corrected energy transport model
• An iterative method for adaptive finite element solutions of an energy transport model of semiconductor devices
• The uniqueness of steady sonic-subsonic solution to hydrodynamic model for semiconductors
• Title not available (Why is that?)
• Convergent algorithms suitable for the solution of the semiconductor device equations
• A COMPARISON OF SOME METHODS FOR THE SOLUTION OF THE NONLINEAR POISSON EQUATION IN SEMICONDUCTOR DEVICE MODELLING
• The subsonic or sonic-subsonic solution of the electric potential driven problem to the HD model for semiconductors
• Discretization of the multiscale semiconductor Boltzmann equation by diffusive relaxation schemes
• Numerical methods for kinetic equations

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