An Approximate Newton Method for the Solution of the Basic Semiconductor Device Equations

DOI10.1137/0726030MaRDI QIDQ3819954zbMATH OpenOpenAlexFDO

Authors Christian Ringhofer, Christian Schmeiser

Publication date 1989

Published in SIAM Journal on Numerical Analysis (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1137/0726030

zbMATH Keywords

singular perturbationsiterative methodlocal convergenceNewton's methodGummel cycle iterationssteady state fundamental semiconductor device equations

Mathematics Subject Classification ID

Technical applications of optics and electromagnetic theory (78A55) Numerical computation of solutions to systems of equations (65H10) Singular perturbations in context of PDEs (35B25) Partial differential equations of mathematical physics and other areas of application (35Q99) Spectral, collocation and related methods for boundary value problems involving PDEs (65N35) Applications to the sciences (65Z05)

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• A review of hydrodynamical models for semiconductors: Asymptotic behavior
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• On a one-dimensional steady-state hydrodynamic model for semiconductors
• Finite Element Approximation to Initial-Boundary Value Problems of the Semiconductor Device Equations with Magnetic Influence
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• New additive difference method for solving semiconductor problems
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• An accelerated monotone iterative method for the quantum-corrected energy transport model
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• The uniqueness of steady sonic-subsonic solution to hydrodynamic model for semiconductors
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• A COMPARISON OF SOME METHODS FOR THE SOLUTION OF THE NONLINEAR POISSON EQUATION IN SEMICONDUCTOR DEVICE MODELLING
• The subsonic or sonic-subsonic solution of the electric potential driven problem to the HD model for semiconductors
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