Analysis of a new implicit solver for a semiconductor model
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Publication:4997429
domain decompositionimplicit time integrationsemiconductorsynthetic accelerationdrift-diffusion limitBoltzmann-Poisson equations
Boltzmann equations (35Q20) PDEs in connection with optics and electromagnetic theory (35Q60) Vlasov equations (35Q83) Stability and convergence of numerical methods for initial value and initial-boundary value problems involving PDEs (65M12) Multigrid methods; domain decomposition for initial value and initial-boundary value problems involving PDEs (65M55) Numerical solution of discretized equations for initial value and initial-boundary value problems involving PDEs (65M22) PDEs in connection with semiconductor devices (35Q81)
Abstract: We present and analyze a new iterative solver for implicit discretizations of a simplified Boltzmann-Poisson system. The algorithm builds on recent work that incorporated a sweeping algorithm for the Vlasov-Poisson equations as part of nested inner-outer iterative solvers for the Boltzmann-Poisson equations. The new method eliminates the need for nesting and requires only one transport sweep per iteration. It arises as a new fixed-point formulation of the discretized system which we prove to be contractive for a given electric potential. We also derive an accelerator to improve the convergence rate for systems in the drift-diffusion regime. We numerically compare the efficiency of the new solver, with and without acceleration, with a recently developed nested iterative solver.
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