A domain decomposition method for silicon devices
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Publication:2721311
DOI10.1080/00411450008205889zbMath1028.82021OpenAlexW2007519341MaRDI QIDQ2721311
Joseph W. Jerome, Chi-Wang Shu, Carlo Cercignani, Irene Martínez Gamba
Publication date: 4 July 2001
Published in: Transport Theory and Statistical Physics (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1080/00411450008205889
drift-diffusion modeldomain decomposition methodsemiconductorsdrift-collisions balanceself-consistent charged transport
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Cites Work
- Derivation of a hydrodynamic system hierarchy for semiconductors from the Boltzmann equation
- Efficient implementation of essentially nonoscillatory shock-capturing schemes. II
- Upwind finite difference solution of Boltzmann equation applied to electron transport in semiconductor devices
- High field approximations to a Boltzmann-Poisson system and boundary conditions in a semiconductor
- Efficient implementation of weighted ENO schemes
- Conditions for runaway phenomena in the kinetic theory of particle swarms
- Runaway Phenomena and Fluid Approximation Under High Fields in Semiconductor Kinetic Theory
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