High field approximations to a Boltzmann-Poisson system and boundary conditions in a semiconductor
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Publication:1372317
DOI10.1016/S0893-9659(97)00069-4zbMath0894.76072OpenAlexW2132254595MaRDI QIDQ1372317
Carlo Cercignani, C. David Levermore, Irene Martínez Gamba
Publication date: 12 November 1997
Published in: Applied Mathematics Letters (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1016/s0893-9659(97)00069-4
Rarefied gas flows, Boltzmann equation in fluid mechanics (76P05) Technical applications of optics and electromagnetic theory (78A55)
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Cites Work
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- Derivation of a hydrodynamic system hierarchy for semiconductors from the Boltzmann equation
- High electric field approximation to charge transport in semiconductor devices
- The Boltzmann equation and its applications
- High field approximations to a Boltzmann-Poisson system and boundary conditions in a semiconductor
- An energy-transport model for semiconductors derived from the Boltzmann equation.
- The milne and kramers problems for the boltzmann equation of a hard sphere gas
- Runaway Phenomena and Fluid Approximation Under High Fields in Semiconductor Kinetic Theory
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