An energy-transport model for semiconductors derived from the Boltzmann equation.

DOI10.1007/BF02179583MaRDI QIDQ1593433zbMATH OpenFDO

Authors Naoufel Ben Abdallah, Pierre Degond, Stephane Génieys

Publication date 16 January 2001

Published in Journal of Statistical Physics (Search for Journal in Brave)

zbMATH Keywords

diffusion approximationkinetic equationssemiconductorsBoltzmann transport equationdrift-diffusion modelFermi-Dirac statisticsenergy transportChapman-Enskog expansionHilbert expansiondegenerate gaseshydrodynamic model

Mathematics Subject Classification ID

Kinetic theory of gases in time-dependent statistical mechanics (82C40) Rarefied gas flows, Boltzmann equation in fluid mechanics (76P05)

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Cites work

• scientific article; zbMATH DE number 60595 (Why is no real title available?)
• scientific article; zbMATH DE number 149143 (Why is no real title available?)
• scientific article; zbMATH DE number 978588 (Why is no real title available?)
• A thermodynamic framework for hydrodynamical models of carrier transport in semiconductors
• Diffusion approximation of nonlinear electron phonon collision mechanisms
• HANS BETHE'S CONTRIBUTIONS TO SOLID-STATE PHYSICS
• High electric field approximation to charge transport in semiconductor devices
• Moment closure hierarchies for kinetic theories.
• Multidimensional spherical harmonics expansion of Boltzmann equation for transport in semiconductors
• On the kinetic theory of rarefied gases
• Runaway Phenomena and Fluid Approximation Under High Fields in Semiconductor Kinetic Theory
• THE ASYMPTOTICS OF COLLISION OPERATORS FOR TWO SPECIES OF PARTICLES OF DISPARATE MASSES
• The Drift–Diffusion Limit for Electron–Phonon Interaction in Semiconductors
• Theory of the flow of electrons and holes in Germanium and other semiconductors
• Thermodynamic derivation of the hydrodynamical model for charge transport in semiconductors
• Transport coefficients of plasmas and disparate mass binary gases

Cited in

(56)

• Quantum High-Field Corrections to a Drift-Collision Balance Model of Semiconductor Transport
• The Velocity Overshoot in Semiconductors According to a Transport Model Derived from the Boltzmann Equation
• scientific article; zbMATH DE number 2046277 (Why is no real title available?)
• Local discontinuous Galerkin methods coupled with implicit integration factor methods for solving reaction-cross-diffusion systems
• Macroscopic models for semiconductor heterostructures
• THE HIGH FIELD ASYMPTOTICS FOR DEGENERATE SEMICONDUCTORS
• On spherical harmonics expansion type modelsfor electron–phonon collisions
• High field approximations to a Boltzmann-Poisson system and boundary conditions in a semiconductor
• Large time behavior and energy relaxation time limit of the solutions to an energy transport model in semiconductors
• Turing instability and traveling fronts for a nonlinear reaction-diffusion system with cross-diffusion
• ON THE RELAXATION LIMITS OF THE HYDRODYNAMIC MODEL FOR SEMICONDUCTOR DEVICES
• 2D numerical simulation of the MEP energy-transport model with a finite difference scheme
• Asymptotic transport models for heat and mass transfer in reactive porous media
• Asymptotics of initial boundary value problems for hydrodynamic and drift diffusion models for semiconductors
• Energy transport in semiconductor devices
• Exciton-catalyzed recombination-generation of electrons and holes in semiconductors: a kinetic approach
• NUMERICAL SOLUTION FOR HYDRODYNAMICAL MODELS OF SEMICONDUCTORS
• A system of parabolic equations in nonequilibrium thermodynamics including thermal and electrical effects
• scientific article; zbMATH DE number 2042309 (Why is no real title available?)
• A relaxation scheme for the hydrodynamic equations for semiconductors
• Existence analysis for a simplified transient energy-transport model for semiconductors
• Asymptotic behavior of strong solutions of a simplified energy-transport model with general conductivity
• Study on a cross diffusion parabolic system
• An asymptotic-preserving scheme for the semiconductor Boltzmann equation toward the energy-transport limit
• A three-fluid approach in bipolar semiconductors with generation-recombination: constitutive laws and Onsager symmetry
• A two-surface problem of the electron flow in a semiconductor on the basis of kinetic theory
• Pattern formation in a ratio-dependent predator-prey model with cross-diffusion
• An energy transport model describing heat generation and conduction in silicon semiconductors
• Kinetic boundary layers and fluid-kinetic coupling in semiconductors
• EXISTENCE OF STATIONARY SOLUTIONS TO AN ENERGY DRIFT-DIFFUSION MODEL FOR SEMICONDUCTOR DEVICES
• Weak Solutions for Nonlinear Boltzmann–Poisson System Modelling Electron–Electron Interactions
• A hydrodynamical model for holes in silicon semiconductors
• On the existence of high-energy tails for the Boltzmann transport equation in semiconductors
• From the Boltzmann equation to generalized kinetic models in applied sciences
• The effect of elastic and inelastic scattering on electronic transport in open systems
• Study of hydrodynamical limits in a multicollision scale Boltzmann equation for semiconductors
• Lyapunov functionals, weak sequential stability, and uniqueness analysis for energy-transport systems
• Transport coefficients of plasmas and disparate mass binary gases
• On the initial-boundary value problem for the bipolar hydrodynamic model for semiconductors
• Numerical discretization of energy-transport model for semiconductors using high-order compact schemes
• Adjoint DSMC for nonlinear spatially-homogeneous Boltzmann equation with a general collision model
• Diffusive semiconductor moment equations using Fermi-Dirac statistics
• Energy-Transport Models for Charge Carriers Involving Impact Ionization in Semiconductors
• THE GLOBAL WEAK SOLUTION AND RELAXATION LIMITS OF THE INITIAL–BOUNDARY VALUE PROBLEM TO THE BIPOLAR HYDRODYNAMIC MODEL FOR SEMICONDUCTORS
• A transport equation for confined structures derived from the Boltzmann equation
• Diffusive limit of the two-band \(k\cdot p\) model for semiconductors
• OPTIMAL DOPANT PROFILING BASED ON ENERGY-TRANSPORT SEMICONDUCTOR MODELS
• A simplified stationary energy-transport model with temperature-dependent conductivity
• An asymptotic-preserving scheme for the semiconductor Boltzmann equation with two-scale collisions: a splitting approach
• Kinetic relaxation models for energy transport
• Semiconductor device optimization in the presence of thermal effects
• 2d numerical simulations of an electron-phonon hydrodynamical model based on the maximum entropy principle
• THE GLOBAL WEAK SOLUTION AND RELAXATION LIMITS OF THE INITIAL–BOUNDARY VALUE PROBLEM TO THE BIPOLAR HYDRODYNAMIC MODEL FOR SEMICONDUCTORS
• Quantum energy-transport and drift-diffusion models
• A solution to the simplified multi-dimensional energy-transport model with a general conductivity for semiconductors
• A complete multifluid model for bipolar semiconductors, with interacting carriers, phonons, and photons

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