An energy-transport model for semiconductors derived from the Boltzmann equation.

DOI10.1007/BF02179583zbMATH Open1081.82610MaRDI QIDQ1593433FDOQ1593433

Authors: Naoufel Ben Abdallah, Pierre Degond, Stephane Génieys 

Publication date: 16 January 2001

Published in: Journal of Statistical Physics (Search for Journal in Brave)

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zbMATH Keywords

diffusion approximationkinetic equationssemiconductorsBoltzmann transport equationdrift-diffusion modelFermi-Dirac statisticsenergy transportChapman-Enskog expansionHilbert expansiondegenerate gaseshydrodynamic model

Mathematics Subject Classification ID

Kinetic theory of gases in time-dependent statistical mechanics (82C40) Rarefied gas flows, Boltzmann equation in fluid mechanics (76P05)

Cites Work

• Moment closure hierarchies for kinetic theories.
• Transport coefficients of plasmas and disparate mass binary gases
• THE ASYMPTOTICS OF COLLISION OPERATORS FOR TWO SPECIES OF PARTICLES OF DISPARATE MASSES
• HANS BETHE'S CONTRIBUTIONS TO SOLID-STATE PHYSICS
• On the kinetic theory of rarefied gases
• Thermodynamic derivation of the hydrodynamical model for charge transport in semiconductors
• Title not available (Why is that?)
• Title not available (Why is that?)
• Theory of the flow of electrons and holes in Germanium and other semiconductors
• The Drift–Diffusion Limit for Electron–Phonon Interaction in Semiconductors
• A thermodynamic framework for hydrodynamical models of carrier transport in semiconductors
• Runaway Phenomena and Fluid Approximation Under High Fields in Semiconductor Kinetic Theory
• Multidimensional spherical harmonics expansion of Boltzmann equation for transport in semiconductors
• Title not available (Why is that?)
• High electric field approximation to charge transport in semiconductor devices
• Diffusion approximation of nonlinear electron phonon collision mechanisms

Cited In (56)

• Weak Solutions for Nonlinear Boltzmann–Poisson System Modelling Electron–Electron Interactions
• Adjoint DSMC for nonlinear spatially-homogeneous Boltzmann equation with a general collision model
• The Velocity Overshoot in Semiconductors According to a Transport Model Derived from the Boltzmann Equation
• Title not available (Why is that?)
• Macroscopic models for semiconductor heterostructures
• THE HIGH FIELD ASYMPTOTICS FOR DEGENERATE SEMICONDUCTORS
• On spherical harmonics expansion type modelsfor electron–phonon collisions
• Local discontinuous Galerkin methods coupled with implicit integration factor methods for solving reaction-cross-diffusion systems
• Large time behavior and energy relaxation time limit of the solutions to an energy transport model in semiconductors
• High field approximations to a Boltzmann-Poisson system and boundary conditions in a semiconductor
• ON THE RELAXATION LIMITS OF THE HYDRODYNAMIC MODEL FOR SEMICONDUCTOR DEVICES
• Turing instability and traveling fronts for a nonlinear reaction-diffusion system with cross-diffusion
• Asymptotics of initial boundary value problems for hydrodynamic and drift diffusion models for semiconductors
• 2D numerical simulation of the MEP energy-transport model with a finite difference scheme
• Asymptotic transport models for heat and mass transfer in reactive porous media
• Energy transport in semiconductor devices
• Exciton-catalyzed recombination-generation of electrons and holes in semiconductors: a kinetic approach
• NUMERICAL SOLUTION FOR HYDRODYNAMICAL MODELS OF SEMICONDUCTORS
• Title not available (Why is that?)
• A system of parabolic equations in nonequilibrium thermodynamics including thermal and electrical effects
• A relaxation scheme for the hydrodynamic equations for semiconductors
• Existence analysis for a simplified transient energy-transport model for semiconductors
• Asymptotic behavior of strong solutions of a simplified energy-transport model with general conductivity
• A three-fluid approach in bipolar semiconductors with generation-recombination: constitutive laws and Onsager symmetry
• Study on a cross diffusion parabolic system
• An asymptotic-preserving scheme for the semiconductor Boltzmann equation toward the energy-transport limit
• A two-surface problem of the electron flow in a semiconductor on the basis of kinetic theory
• Pattern formation in a ratio-dependent predator-prey model with cross-diffusion
• Kinetic boundary layers and fluid-kinetic coupling in semiconductors
• An energy transport model describing heat generation and conduction in silicon semiconductors
• EXISTENCE OF STATIONARY SOLUTIONS TO AN ENERGY DRIFT-DIFFUSION MODEL FOR SEMICONDUCTOR DEVICES
• A hydrodynamical model for holes in silicon semiconductors
• On the existence of high-energy tails for the Boltzmann transport equation in semiconductors
• The effect of elastic and inelastic scattering on electronic transport in open systems
• From the Boltzmann equation to generalized kinetic models in applied sciences
• Study of hydrodynamical limits in a multicollision scale Boltzmann equation for semiconductors
• Lyapunov functionals, weak sequential stability, and uniqueness analysis for energy-transport systems
• Transport coefficients of plasmas and disparate mass binary gases
• On the initial-boundary value problem for the bipolar hydrodynamic model for semiconductors
• Energy-Transport Models for Charge Carriers Involving Impact Ionization in Semiconductors
• Numerical discretization of energy-transport model for semiconductors using high-order compact schemes
• THE GLOBAL WEAK SOLUTION AND RELAXATION LIMITS OF THE INITIAL–BOUNDARY VALUE PROBLEM TO THE BIPOLAR HYDRODYNAMIC MODEL FOR SEMICONDUCTORS
• Diffusive semiconductor moment equations using Fermi-Dirac statistics
• A transport equation for confined structures derived from the Boltzmann equation
• OPTIMAL DOPANT PROFILING BASED ON ENERGY-TRANSPORT SEMICONDUCTOR MODELS
• Diffusive limit of the two-band \(k\cdot p\) model for semiconductors
• An asymptotic-preserving scheme for the semiconductor Boltzmann equation with two-scale collisions: a splitting approach
• A simplified stationary energy-transport model with temperature-dependent conductivity
• Kinetic relaxation models for energy transport
• Semiconductor device optimization in the presence of thermal effects
• THE GLOBAL WEAK SOLUTION AND RELAXATION LIMITS OF THE INITIAL–BOUNDARY VALUE PROBLEM TO THE BIPOLAR HYDRODYNAMIC MODEL FOR SEMICONDUCTORS
• 2d numerical simulations of an electron-phonon hydrodynamical model based on the maximum entropy principle
• Quantum energy-transport and drift-diffusion models
• A solution to the simplified multi-dimensional energy-transport model with a general conductivity for semiconductors
• Quantum High-Field Corrections to a Drift-Collision Balance Model of Semiconductor Transport
• A complete multifluid model for bipolar semiconductors, with interacting carriers, phonons, and photons

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