On the initial-boundary value problem for the bipolar hydrodynamic model for semiconductors
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Publication:5937326
DOI10.1006/jdeq.2000.3850zbMath1180.35434OpenAlexW2055287127MaRDI QIDQ5937326
Publication date: 12 July 2001
Published in: Journal of Differential Equations (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1006/jdeq.2000.3850
Related Items (9)
A review of hydrodynamical models for semiconductors: Asymptotic behavior ⋮ Global smooth solutions to the multidimensional hydrodynamic model for plasmas with insulating boundary conditions ⋮ Large time behavior of solutions of the bipolar hydrodynamical model for semiconductors. ⋮ Large-time behavior of entropy solutions to bipolar hydrodynamic model for semiconductors ⋮ Multi-dimensional bipolar hydrodynamic model of semiconductor with insulating boundary conditions and non-zero doping profile ⋮ Analysis on the initial-boundary value problem of a full bipolar hydrodynamic model for semiconductors ⋮ Optimal convergence rates to nonlinear diffusion waves for the compressible Euler-Poisson system with damping ⋮ Stability of the stationary solution of the Cauchy problem to a semiconductor full hydrodynamic model with recombination-generation rate ⋮ Global smooth solutions to the multi-dimensional hydrodynamic model for two-carrier plasmas
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