Macroscopic models for semiconductor heterostructures
DOI10.1063/1.532528zbMATH Open0938.82049OpenAlexW1966982940MaRDI QIDQ4701668FDOQ4701668
Authors: Pierre Degond, Christian Schmeiser 
Publication date: 21 November 1999
Published in: Journal of Mathematical Physics (Search for Journal in Brave)
Full work available at URL: https://semanticscholar.org/paper/e434b5f2866f598e2e9c4e1a2859d73b59314750
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Cites Work
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- Knudsen layers from a computational viewpoint
- High electric field approximation to charge transport in semiconductor devices
- COMPARATIVE STUDIES OF HYDRODYNAMIC AND ENERGY TRANSPORT MODELS
- SECOND ORDER BOUNDARY CONDITIONS FOR THE DRIFT-DIFFUSION EQUATIONS OF SEMICONDUCTORS
Cited In (20)
- Mathematical modelling of charge transport in graphene heterojunctions
- Homogenization of a spherical harmonics expansion model
- ON THE RELAXATION LIMITS OF THE HYDRODYNAMIC MODEL FOR SEMICONDUCTOR DEVICES
- Hybrid Classical-Quantum Models for Charge Transport in Graphene with Sharp Potentials
- ANALYSIS OF A SPHERICAL HARMONICS EXPANSION MODEL OF PLASMA PHYSICS
- A system of parabolic equations in nonequilibrium thermodynamics including thermal and electrical effects
- Diffusion limit of a Boltzmann-Poisson system with nonlinear equilibrium state
- Numerical comparison between two spherical harmonics expansion models and a kinetic equation
- Quantum transmission conditions for diffusive transport in graphene with steep potentials
- A coupled Schrödinger drift-diffusion model for quantum semiconductor device simulations
- Title not available (Why is that?)
- Kinetic boundary layers and fluid-kinetic coupling in semiconductors
- On modeling the mechanical behavior of heterostructures with quantum dots
- Simulation of visible and ultra-violet group-III nitride light emitting diodes
- Weak Solutions for Nonlinear Boltzmann–Poisson System Modelling Electron–Electron Interactions
- Classical solutions of drift-diffusion equations for semiconductor devices: The two-dimensional case
- Hybrid coupling of a one-dimensional energy-transport Schrödinger system
- On the initial-boundary value problem for the bipolar hydrodynamic model for semiconductors
- Diffusion induced by grain boundaries: a SHE model
- Title not available (Why is that?)
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