Macroscopic models for semiconductor heterostructures
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Publication:4701668
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Cites work
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- High electric field approximation to charge transport in semiconductor devices
- Knudsen layers from a computational viewpoint
- On a hierarchy of macroscopic models for semiconductors
- SECOND ORDER BOUNDARY CONDITIONS FOR THE DRIFT-DIFFUSION EQUATIONS OF SEMICONDUCTORS
Cited in
(20)- Mathematical modelling of charge transport in graphene heterojunctions
- scientific article; zbMATH DE number 1230507 (Why is no real title available?)
- Homogenization of a spherical harmonics expansion model
- ON THE RELAXATION LIMITS OF THE HYDRODYNAMIC MODEL FOR SEMICONDUCTOR DEVICES
- Hybrid Classical-Quantum Models for Charge Transport in Graphene with Sharp Potentials
- ANALYSIS OF A SPHERICAL HARMONICS EXPANSION MODEL OF PLASMA PHYSICS
- A system of parabolic equations in nonequilibrium thermodynamics including thermal and electrical effects
- Numerical comparison between two spherical harmonics expansion models and a kinetic equation
- Diffusion limit of a Boltzmann-Poisson system with nonlinear equilibrium state
- Quantum transmission conditions for diffusive transport in graphene with steep potentials
- A coupled Schrödinger drift-diffusion model for quantum semiconductor device simulations
- scientific article; zbMATH DE number 2066062 (Why is no real title available?)
- Kinetic boundary layers and fluid-kinetic coupling in semiconductors
- On modeling the mechanical behavior of heterostructures with quantum dots
- Simulation of visible and ultra-violet group-III nitride light emitting diodes
- Weak Solutions for Nonlinear Boltzmann–Poisson System Modelling Electron–Electron Interactions
- Classical solutions of drift-diffusion equations for semiconductor devices: The two-dimensional case
- Hybrid coupling of a one-dimensional energy-transport Schrödinger system
- On the initial-boundary value problem for the bipolar hydrodynamic model for semiconductors
- Diffusion induced by grain boundaries: a SHE model
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