ELASTIC AND DRIFT–DIFFUSION LIMITS OF ELECTRON–PHONON INTERACTION IN SEMICONDUCTORS
From MaRDI portal
Publication:4270467
DOI10.1142/S0218202598000032zbMath0957.82035MaRDI QIDQ4270467
Alexander Zwirchmayr, Christian Schmeiser
Publication date: 22 November 1999
Published in: Mathematical Models and Methods in Applied Sciences (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1142/s0218202598000032
electron-phonon interaction; transport problem; electron transport in semiconductors; elastic limit; drift-diffusion limits
Related Items
Macroscopic models for semiconductor heterostructures, AN INFINITE SYSTEM OF DIFFUSION EQUATIONS ARISING IN TRANSPORT THEORY: THE COUPLED SPHERICAL HARMONICS EXPANSION MODEL, THE HIGH FIELD ASYMPTOTICS FOR DEGENERATE SEMICONDUCTORS, ANALYSIS OF A SPHERICAL HARMONICS EXPANSION MODEL OF PLASMA PHYSICS, LOW AND HIGH FIELD SCALING LIMITS FOR THE VLASOV– AND WIGNER–POISSON–FOKKER–PLANCK SYSTEMS, LOW AND HIGH FIELD SCALING LIMITS FOR THE VLASOV– AND WIGNER–POISSON–FOKKER–PLANCK SYSTEMS, Recovering doping profiles in semiconductor devices with the Boltzmann-Poisson model, Macroscopic models for ionization in the presence of strong electric fields, On Well-Posedness of a Boltzmann-Like Semiconductor Model