LOW AND HIGH FIELD SCALING LIMITS FOR THE VLASOV– AND WIGNER–POISSON–FOKKER–PLANCK SYSTEMS
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Publication:5890453
DOI10.1081/TT-100105365zbMath1106.82381MaRDI QIDQ5890453
Chi-Wang Shu, Anton Arnold, Irene Martínez Gamba, José Antonio Carrillo
Publication date: 6 May 2002
Published in: Transport Theory and Statistical Physics (Search for Journal in Brave)
Domain decompositionVlasov-Poisson-Fokker-Planck equationScaling limitsDrift-diffusion modelsSemiconductor models
Statistical mechanics of semiconductors (82D37) Kinetic theory of gases in time-dependent statistical mechanics (82C40)
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Cites Work
- Derivation of a hydrodynamic system hierarchy for semiconductors from the Boltzmann equation
- Path integral approach to quantum Brownian motion
- Efficient implementation of essentially nonoscillatory shock-capturing schemes. II
- High field approximations to a Boltzmann-Poisson system and boundary conditions in a semiconductor
- Efficient implementation of weighted ENO schemes
- Exponential convergence toward equilibrium for homogeneous Fokker-Planck-type equations
- ELASTIC AND DRIFT–DIFFUSION LIMITS OF ELECTRON–PHONON INTERACTION IN SEMICONDUCTORS
- Runaway Phenomena and Fluid Approximation Under High Fields in Semiconductor Kinetic Theory
- The Quantum Hydrodynamic Model for Semiconductor Devices
- On the Quantum Correction For Thermodynamic Equilibrium
- The Child–Langmuir Law for the Boltzmann Equation of Semiconductors
- On a hierarchy of macroscopic models for semiconductors
- High field approximations of the spherical harmonics expansion model for semiconductors
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