Theory of the flow of electrons and holes in Germanium and other semiconductors
From MaRDI portal
(Redirected from Publication:5367111)
Recommendations
- scientific article; zbMATH DE number 861467
- Hot electron transport in semiconductors
- scientific article; zbMATH DE number 799723
- A two-surface problem of the electron flow in a semiconductor on the basis of kinetic theory
- Voltage-current characteristics of a đđ-diode from a drift-diffusion model with nonlinear diffusion
Cited in
(only showing first 100 items - show all)- Classical solutions of drift-diffusion equations for semiconductor devices: The two-dimensional case
- On the basic equations for carrier transport in semiconductors
- Numerical solution of a symmetric one-dimensional diode model
- Convergence conditions for Gummel's method
- On boundedness and stability of solutions to quasilinear parabolic equations with nonlocal nonlinearities
- Sensitivity analysis for semiconductor simulations
- Switching behavior of PN-diodes: Volterra integral equation models
- Asymptotic behavior of solutions of transport equations for semiconductor devices
- Time discretization of a nonlinear initial value problem
- Uniqueness and regularity for the two-dimensional drift-diffusion model for semiconductors coupled with Maxwell's equations
- Nonlinear boundary value problems with application to semiconductor device equations
- Semiconductor device simulation
- Three-dimensional exponentially fitted conforming tetrahedral finite elements for the semiconductor continuity equations
- Monotone iterative methods for the adaptive finite element solution of semiconductor equations
- An energy-transport model for semiconductors derived from the Boltzmann equation.
- A parameter-uniform Schwarz method for a singularly perturbed reaction-diffusion problem with an interior layer
- Numerical discretization of energy-transport model for semiconductors using high-order compact schemes
- Dynamics of current, charge and mass
- Computational and analytical comparison of flux discretizations for the semiconductor device equations beyond Boltzmann statistics
- Traveling waves in GaAs semiconductors
- Bounds on the maximum modulus of solutions to quasilinear parabolic equations by means of a modified Lyapunov method
- A relaxation scheme for the hydrodynamic equations for semiconductors
- Weak solutions to a hydrodynamic model for semiconductors and relaxation to the drift-diffusion equation
- Convergence of shock capturing schemes for the compressible Euler-Poisson equations
- An optimization approach to a finite dimensional parameter estimation problem in semiconductor device design
- Relaxation limit from the quantum Navier-Stokes equations to the quantum drift-diffusion equation
- A stabilized finite element method for the Poisson-Nernst-Planck equations in three-dimensional ion channel simulations
- Analysis of numerical schemes for semiconductor energy-transport models
- A PDE-constrained optimization approach for topology optimization of strained photonic devices
- A class of finite element methods with averaging techniques for solving the three-dimensional drift-diffusion model in semiconductor device simulations
- Long-time behaviour of hybrid finite volume schemes for advection-diffusion equations: linear and nonlinear approaches
- Mixed layer problem and quasineutral limit of the bipolar drift-diffusion model with different mobilities
- Uniform convergence to equilibrium for a family of drift-diffusion models with trap-assisted recombination and the limiting Shockley-Read-Hall model
- A virtual element method for the steady-state Poisson-Nernst-Planck equations on polygonal meshes
- Large-time asymptotics for a matrix spin drift-diffusion model
- On the composite discontinuous Galerkin method for simulations of electric properties of semiconductor devices
- Mathematical models as research data via flexiformal theory graphs
- An approach to the Gummel map by vector extrapolation methods
- A two-surface problem of the electron flow in a semiconductor on the basis of kinetic theory
- Simulation of visible and ultra-violet group-III nitride light emitting diodes
- Quasineutral limit of a time-dependent drift-diffusion-Poisson model for p-n junction semiconductor devices
- On the computation of semiconductor device current characteristics by finite difference methods
- Homogenization results for ionic transport in periodic porous media
- A conforming exponentially fitted finite element scheme for the semiconductor continuity equations in 3D
- Quantum semiconductor models
- Entropy method and asymptotic behaviours of finite volume schemes
- An Example for Bifurcation of Solutions of the Basic Equations for Carrier Distributions in Semiconductors
- Quasi-neutral limit of the multidimensional drift-diffusion models for semiconductors
- Analysis of electronic models for solar cells including energy resolved defect densities
- Self-adaptive finite-element simulation of bipolar, strongly reverse-biased pn-junctions
- Bifurcation from Characteristic Values for Equations Involving Fredholm Mappings with Applications to Partial Differential Equations. II Application
- Transport in a Semiconductor with Anisotropic Mobilities and the Photopiezoresistance Effect
- Mathematical modeling of semiconductors: from quantum mechanics to devices
- A triangular mixed finite element method for the stationary semiconductor device equations
- Well-posedness on a new hydrodynamic model of the fluid with the dilute charged particles
- Inverse-Average-Type Finite Element Discretizations of Selfadjoint Second-Order Elliptic Problems
- ASYMPTOTIC METHODS FOR TRANSIENT SEMICONDUCTOR DEVICE EQUATIONS
- Combinatorial Aspects in Sparse Elimination Methods
- Ein System stationärer partieller Differentialgleichungen
- Time-dependent solutions of a nonlinear system arising in semiconductor theory
- A QUALITATIVE ANALYSIS OF THE FUNDAMENTAL SEMICONDUCTOR DEVICE EQUATIONS
- ANALYSIS OF A DISCRETIZATION ALGORITHM FOR STATIONARY CONTINUITY EQUATIONS IN SEMICONDUCTOR DEVICE MODELS
- ANALYSIS OF A DISCRETIZATION ALGORITHM FOR STATIONARY CONTINUITY EQUATIONS IN SEMICONDUCTOR DEVICE MODELS, II
- ANALYSIS OF A DISCRETIZATION ALGORITHM FOR STATIONARY EQUATIONS IN SEMICONDUCTOR DEVICE MODELS, III
- scientific article; zbMATH DE number 4006818 (Why is no real title available?)
- On the Boundedness of Solutions to the Basic Equations in Semiconductor Theory
- Zum System partieller Differentialgleichungen des Ladungsträgertransports
- Stability of the Linearized Transient Semiconductor Device Equations
- Time-dependent solutions of a nonlinear system arising in semiconductor theoryâII. Boundedness and periodicity
- On the distribution of carriers in a semiconductor
- EXISTENCE AND REGULARITY FOR VAN ROOSBROECK SYSTEMS WITH GENERAL MIXED BOUNDARY CONDITIONS
- Metodi misti di exponential fitting per le equazioni di continuita' della corrente
- Convergence of a finite element method for the drift-diffusion semiconductor device equations: the zero diffusion case
- Parameter-uniformly convergent exponential spline difference scheme for singularly perturbed semilinear reaction-diffusion problems
- Study of hydrodynamical limits in a multicollision scale Boltzmann equation for semiconductors
- Error Estimates for a Finite Element Method for the Drift-Diffusion Semiconductor Device Equations: The Zero Diffusion Case
- Mixed finite volume methods for semiconductor device simulation
- On the Discretization of van Roosbroeck's Equations with Magnetic Field
- Uniqueness results for the steady-state electrodiffusion equations in the case of monotonic potentials and multiple junctions
- Global estimates and asymptotics for electro reaction diffusion systems in heterostructures
- A singular limit in the drift diffusion model for semiconductors coupled with maxwell's equations
- On the Discretization of van Roosbroeck's Equations with Magnetic Field
- On the Discretization of van Roosbroeck's Equations with Magnetic Field
- On the non-existence of đ-uniform finite difference methods on uniform meshes for semilinear two-point boundary value problems
- On the Discretization of van Roosbroeck's Equations with Magnetic Field
- THE GLOBAL WEAK SOLUTION AND RELAXATION LIMITS OF THE INITIALâBOUNDARY VALUE PROBLEM TO THE BIPOLAR HYDRODYNAMIC MODEL FOR SEMICONDUCTORS
- A review of hydrodynamical models for semiconductors: Asymptotic behavior
- Optimization of a Multiphysics Problem in Semiconductor Laser Design
- Global well posedness for a 2D drift-diffusion-Maxwell system
- An analysis of the Scharfetter-Gummel box method for the stationary semiconductor device equations
- Semiconductor Equations for variable Mobilities Based on Boltzmann Statistics or Fermi-Dirac Statistics
- Thermomechanics of hydrogen storage in metallic hydrides: modeling and analysis
- ON THE 3-D BIPOLAR ISENTROPIC EULERâPOISSON MODEL FOR SEMICONDUCTORS AND THE DRIFT-DIFFUSION LIMIT
- THE GLOBAL WEAK SOLUTION AND RELAXATION LIMITS OF THE INITIALâBOUNDARY VALUE PROBLEM TO THE BIPOLAR HYDRODYNAMIC MODEL FOR SEMICONDUCTORS
- On the existence of solutions for a drift-diffusion system arising in corrosion modeling
- scientific article; zbMATH DE number 844347 (Why is no real title available?)
- scientific article; zbMATH DE number 861467 (Why is no real title available?)
- ReactionâDiffusion Processes of Electrically Charged Species
- scientific article; zbMATH DE number 894365 (Why is no real title available?)
- Multilevel solution of augmented driftâdiffusion equations
This page was built for publication: Theory of the flow of electrons and holes in Germanium and other semiconductors
Report a bug (only for logged in users!)Click here to report a bug for this page (MaRDI item Q5367111)