Theory of the flow of electrons and holes in Germanium and other semiconductors
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Cited in
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- Semiconductor Equations for variable Mobilities Based on Boltzmann Statistics or Fermi-Dirac Statistics
- Error Estimates for a Finite Element Method for the Drift-Diffusion Semiconductor Device Equations: The Zero Diffusion Case
- Relaxation limit from the quantum Navier-Stokes equations to the quantum drift-diffusion equation
- Traveling waves in GaAs semiconductors
- The existence theory of the nonlinear discrete system and the convergence theory of the Gummel iteration for the PNP equations
- A QUALITATIVE ANALYSIS OF THE FUNDAMENTAL SEMICONDUCTOR DEVICE EQUATIONS
- On the Discretization of van Roosbroeck's Equations with Magnetic Field
- Global estimates and asymptotics for electro reaction diffusion systems in heterostructures
- On the Discretization of van Roosbroeck's Equations with Magnetic Field
- Homogenization results for ionic transport in periodic porous media
- A fully cross-diffusive two-component evolution system: existence and qualitative analysis via entropy-consistent thin-film-type approximation
- On the Discretization of van Roosbroeck's Equations with Magnetic Field
- Global well posedness for a 2D drift-diffusion-Maxwell system
- Inverse-Average-Type Finite Element Discretizations of Selfadjoint Second-Order Elliptic Problems
- A new numerical strategy for the drift-diffusion equations based on bridging the hybrid mixed and exponential fitted methods
- On the Boundedness of Solutions to the Basic Equations in Semiconductor Theory
- An error predict-correction formula of the load vector in the BSLM for solving three-dimensional Burgers' equations
- Galerkin Approximation of Weak Solutions of the Drift Diffusion Model for Semiconductors Coupled with Maxwell's Equations
- Time-dependent solutions of a nonlinear system arising in semiconductor theoryâII. Boundedness and periodicity
- A conforming exponentially fitted finite element scheme for the semiconductor continuity equations in 3D
- Mathematical models as research data via flexiformal theory graphs
- Structure preservation in high-order hybrid discretisations of potential-driven advection-diffusion: linear and nonlinear approaches
- Parameter-uniformly convergent exponential spline difference scheme for singularly perturbed semilinear reaction-diffusion problems
- A stabilized finite element method for the Poisson-Nernst-Planck equations in three-dimensional ion channel simulations
- Self-adaptive finite-element simulation of bipolar, strongly reverse-biased pn-junctions
- A 1D coupled Schrödinger drift-diffusion model including collisions
- scientific article; zbMATH DE number 894365 (Why is no real title available?)
- ASYMPTOTIC METHODS FOR TRANSIENT SEMICONDUCTOR DEVICE EQUATIONS
- Time-dependent solutions of a nonlinear system arising in semiconductor theory
- Transport in a Semiconductor with Anisotropic Mobilities and the Photopiezoresistance Effect
- Enhanced numerical analysis of current-voltage characteristics of long wavelength infrared p-on-n HgCdTe photodiodes
- Mathematical analysis of a thermodynamically consistent reduced model for iron corrosion
- Quantum semiconductor models
- A brief survey on numerical methods for solving singularly perturbed problems
- Long-time behaviour of hybrid finite volume schemes for advection-diffusion equations: linear and nonlinear approaches
- On the computation of semiconductor device current characteristics by finite difference methods
- ANALYSIS OF A DISCRETIZATION ALGORITHM FOR STATIONARY CONTINUITY EQUATIONS IN SEMICONDUCTOR DEVICE MODELS
- ANALYSIS OF A DISCRETIZATION ALGORITHM FOR STATIONARY CONTINUITY EQUATIONS IN SEMICONDUCTOR DEVICE MODELS, II
- Electrophysiology
- An optimization approach to a finite dimensional parameter estimation problem in semiconductor device design
- Dynamics of current, charge and mass
- On the existence of solutions for a drift-diffusion system arising in corrosion modeling
- On the distribution of carriers in a semiconductor
- On the composite discontinuous Galerkin method for simulations of electric properties of semiconductor devices
- A PDE-constrained optimization approach for topology optimization of strained photonic devices
- Analysis of parasitic quantum effects in classical CMOS circuits
- Large data solutions to the viscous quantum hydrodynamic model with barrier potential
- A virtual element method for the steady-state Poisson-Nernst-Planck equations on polygonal meshes
- A review of hydrodynamical models for semiconductors: Asymptotic behavior
- The 3D transient semiconductor equations with gradient-dependent and interfacial recombination
- A relaxation scheme for the hydrodynamic equations for semiconductors
- Uniqueness and regularity for the two-dimensional drift-diffusion model for semiconductors coupled with Maxwell's equations
- Metodi misti di exponential fitting per le equazioni di continuita' della corrente
- Preconditioned CG-type methods for solving the coupled system of fundamental semiconductor equations
- Well-posedness on a new hydrodynamic model of the fluid with the dilute charged particles
- An Example for Bifurcation of Solutions of the Basic Equations for Carrier Distributions in Semiconductors
- Partial regularity of suitable weak solutions of the Navier-Stokes-Planck-Nernst-Poisson equation
- Monotone iterative methods for the adaptive finite element solution of semiconductor equations
- Error analysis of virtual element methods for the time-dependent Poisson-Nernst-Planck equations
- An asymptotic-preserving scheme for the semiconductor Boltzmann equation toward the energy-transport limit
- Relaxation limit in bipolar semiconductor hydrodynamic model with non-constant doping profile
- Uniform estimates and uniqueness of stationary solutions to the driftâdiffusion model for semiconductors
- Weak solutions to a hydrodynamic model for semiconductors and relaxation to the drift-diffusion equation
- Convergence of shock capturing schemes for the compressible Euler-Poisson equations
- Stationary energy models for semiconductor devices with incompletely ionized impurities
- A class of finite element methods with averaging techniques for solving the three-dimensional drift-diffusion model in semiconductor device simulations
- Color-coded epistemic modes in a Jungian hexagon of opposition
- A two-surface problem of the electron flow in a semiconductor on the basis of kinetic theory
- Mixed finite volume methods for semiconductor device simulation
- scientific article; zbMATH DE number 4006818 (Why is no real title available?)
- ON THE 3-D BIPOLAR ISENTROPIC EULERâPOISSON MODEL FOR SEMICONDUCTORS AND THE DRIFT-DIFFUSION LIMIT
- A parameter-uniform B-spline collocation method for singularly perturbed semilinear reaction-diffusion problems
- A model of electrodiffusion and osmotic water flow and its energetic structure
- Multilevel solution of augmented driftâdiffusion equations
- On a hierarchy of macroscopic models for semiconductors
- Initial Boundary Value Problems from Semiconductor Device Theory
- An approach to the Gummel map by vector extrapolation methods
- Simulation of visible and ultra-violet group-III nitride light emitting diodes
- Numerical simulation of semiconductor devices
- Quasineutral limit of a time-dependent drift-diffusion-Poisson model for p-n junction semiconductor devices
- Bifurcation from Characteristic Values for Equations Involving Fredholm Mappings with Applications to Partial Differential Equations. II Application
- Asymptotic behavior of solutions of transport equations for semiconductor devices
- An energy-transport model for semiconductors derived from the Boltzmann equation.
- Classical solutions of drift-diffusion equations for semiconductor devices: The two-dimensional case
- Uniqueness results for the steady-state electrodiffusion equations in the case of monotonic potentials and multiple junctions
- A singular limit in the drift diffusion model for semiconductors coupled with maxwell's equations
- Consistency and convergence for a family of finite volume discretizations of the Fokker-Planck operator
- Poisson-Nernst-Planck systems for narrow tubular-like membrane channels
- Convergence of a finite element method for the drift-diffusion semiconductor device equations: the zero diffusion case
- Timeâperiodic flows of electrons and holes in semiconductor devices
- A structure preserving hybrid finite volume scheme for semiconductor models with magnetic field on general meshes
- scientific article; zbMATH DE number 844347 (Why is no real title available?)
- Convergence of a finite volume scheme for a corrosion model
- Nanoparticle-based organic polymer retinal prostheses: modeling, solution map and simulation
- Study of hydrodynamical limits in a multicollision scale Boltzmann equation for semiconductors
- Relaxation limit and initial layer to hydrodynamic models for semiconductors
- Thermomechanics of hydrogen storage in metallic hydrides: modeling and analysis
- The time-relaxation limit for weak solutions to the quantum hydrodynamics system
- Mixed layer problem and quasineutral limit of the bipolar drift-diffusion model with different mobilities
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