Theory of the flow of electrons and holes in Germanium and other semiconductors

DOI10.1002/J.1538-7305.1950.TB03653.XzbMATH Open1372.35295OpenAlexW2137485331WikidataQ60326435 ScholiaQ60326435MaRDI QIDQ5367111FDOQ5367111

Authors: Willy Werner van Roosbroeck 

Publication date: 12 October 2017

Published in: Bell System Technical Journal (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1002/j.1538-7305.1950.tb03653.x

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Mathematics Subject Classification ID

Technical applications of optics and electromagnetic theory (78A55) PDEs in connection with optics and electromagnetic theory (35Q60) PDEs in connection with statistical mechanics (35Q82) Motion of charged particles (78A35) Statistical mechanics of semiconductors (82D37)

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• A fully cross-diffusive two-component evolution system: existence and qualitative analysis via entropy-consistent thin-film-type approximation
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• Enhanced numerical analysis of current-voltage characteristics of long wavelength infrared p-on-n HgCdTe photodiodes
• A brief survey on numerical methods for solving singularly perturbed problems
• ANALYSIS OF A DISCRETIZATION ALGORITHM FOR STATIONARY CONTINUITY EQUATIONS IN SEMICONDUCTOR DEVICE MODELS
• ANALYSIS OF A DISCRETIZATION ALGORITHM FOR STATIONARY CONTINUITY EQUATIONS IN SEMICONDUCTOR DEVICE MODELS, II
• An optimization approach to a finite dimensional parameter estimation problem in semiconductor device design
• Dynamics of current, charge and mass
• Analysis of parasitic quantum effects in classical CMOS circuits
• On the existence of solutions for a drift-diffusion system arising in corrosion modeling
• On the composite discontinuous Galerkin method for simulations of electric properties of semiconductor devices
• A PDE-constrained optimization approach for topology optimization of strained photonic devices
• The 3D transient semiconductor equations with gradient-dependent and interfacial recombination
• A review of hydrodynamical models for semiconductors: Asymptotic behavior
• A relaxation scheme for the hydrodynamic equations for semiconductors
• Uniqueness and regularity for the two-dimensional drift-diffusion model for semiconductors coupled with Maxwell's equations
• Preconditioned CG-type methods for solving the coupled system of fundamental semiconductor equations
• Well-posedness on a new hydrodynamic model of the fluid with the dilute charged particles
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• Weak solutions to a hydrodynamic model for semiconductors and relaxation to the drift-diffusion equation
• An asymptotic-preserving scheme for the semiconductor Boltzmann equation toward the energy-transport limit
• Relaxation limit in bipolar semiconductor hydrodynamic model with non-constant doping profile
• Convergence of shock capturing schemes for the compressible Euler-Poisson equations
• Mixed finite volume methods for semiconductor device simulation
• ON THE 3-D BIPOLAR ISENTROPIC EULER–POISSON MODEL FOR SEMICONDUCTORS AND THE DRIFT-DIFFUSION LIMIT
• On a hierarchy of macroscopic models for semiconductors
• A parameter-uniform B-spline collocation method for singularly perturbed semilinear reaction-diffusion problems
• A model of electrodiffusion and osmotic water flow and its energetic structure
• Initial Boundary Value Problems from Semiconductor Device Theory
• An approach to the Gummel map by vector extrapolation methods
• Quasineutral limit of a time-dependent drift-diffusion-Poisson model for p-n junction semiconductor devices
• Numerical simulation of semiconductor devices
• Asymptotic behavior of solutions of transport equations for semiconductor devices
• An energy-transport model for semiconductors derived from the Boltzmann equation.
• Uniqueness results for the steady-state electrodiffusion equations in the case of monotonic potentials and multiple junctions
• A singular limit in the drift diffusion model for semiconductors coupled with maxwell's equations
• Convergence of a finite element method for the drift-diffusion semiconductor device equations: the zero diffusion case
• Classical solutions of drift-diffusion equations for semiconductor devices: The two-dimensional case
• Poisson-Nernst-Planck systems for narrow tubular-like membrane channels
• Study of hydrodynamical limits in a multicollision scale Boltzmann equation for semiconductors
• Relaxation limit and initial layer to hydrodynamic models for semiconductors
• QUASINEUTRAL LIMIT OF THE MULTI-DIMENSIONAL DRIFT-DIFFUSION-POISSON MODELS FOR SEMICONDUCTORS WITH PN-JUNCTIONS
• Thermomechanics of hydrogen storage in metallic hydrides: modeling and analysis
• Convergence conditions for Gummel's method
• On boundedness and stability of solutions to quasilinear parabolic equations with nonlocal nonlinearities
• Large-time asymptotics for a matrix spin drift-diffusion model
• An analysis of the Scharfetter-Gummel box method for the stationary semiconductor device equations
• On the initial-boundary value problem for the bipolar hydrodynamic model for semiconductors
• Initial Boundary Value Problems from Semiconductor Device Theory
• Numerical discretization of energy-transport model for semiconductors using high-order compact schemes
• THE GLOBAL WEAK SOLUTION AND RELAXATION LIMITS OF THE INITIAL–BOUNDARY VALUE PROBLEM TO THE BIPOLAR HYDRODYNAMIC MODEL FOR SEMICONDUCTORS
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• On the basic equations for carrier transport in semiconductors
• Bounds on the maximum modulus of solutions to quasilinear parabolic equations by means of a modified Lyapunov method
• A parameter-uniform Schwarz method for a singularly perturbed reaction-diffusion problem with an interior layer
• Numerical solution of a symmetric one-dimensional diode model
• A triangular mixed finite element method for the stationary semiconductor device equations
• The immersed boundary method for advection-electrodiffusion with implicit timestepping and local mesh refinement
• Reaction—Diffusion Processes of Electrically Charged Species
• The limiting problem of the drift-diffusion-Poisson model with discontinuous p-n-junctions
• THE GLOBAL WEAK SOLUTION AND RELAXATION LIMITS OF THE INITIAL–BOUNDARY VALUE PROBLEM TO THE BIPOLAR HYDRODYNAMIC MODEL FOR SEMICONDUCTORS
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• Stability of the Linearized Transient Semiconductor Device Equations
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• A QUALITATIVE ANALYSIS OF THE FUNDAMENTAL SEMICONDUCTOR DEVICE EQUATIONS
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• An error predict-correction formula of the load vector in the BSLM for solving three-dimensional Burgers' equations
• Galerkin Approximation of Weak Solutions of the Drift Diffusion Model for Semiconductors Coupled with Maxwell's Equations
• A conforming exponentially fitted finite element scheme for the semiconductor continuity equations in 3D
• Consistency and convergence for a family of finite volume discretizations of the Fokker–Planck operator
• Structure preservation in high-order hybrid discretisations of potential-driven advection-diffusion: linear and nonlinear approaches
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• Self-adaptive finite-element simulation of bipolar, strongly reverse-biased pn-junctions
• A stabilized finite element method for the Poisson-Nernst-Planck equations in three-dimensional ion channel simulations
• ASYMPTOTIC METHODS FOR TRANSIENT SEMICONDUCTOR DEVICE EQUATIONS
• Mathematical analysis of a thermodynamically consistent reduced model for iron corrosion
• Transport in a Semiconductor with Anisotropic Mobilities and the Photopiezoresistance Effect
• Long-time behaviour of hybrid finite volume schemes for advection-diffusion equations: linear and nonlinear approaches
• Electrophysiology
• On the computation of semiconductor device current characteristics by finite difference methods
• On the distribution of carriers in a semiconductor
• Mathematical Modeling of Semiconductors: From Quantum Mechanics to Devices

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