ANALYSIS OF A DISCRETIZATION ALGORITHM FOR STATIONARY CONTINUITY EQUATIONS IN SEMICONDUCTOR DEVICE MODELS

DOI10.1108/EB009979MaRDI QIDQ3756463zbMATH OpenOpenAlexFDO

Authors M. S. Mock

Publication date 1983

Published in COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1108/eb009979

zbMATH Keywords

mesh refinementmesh generationelectrostatic potentialsemiconductor device modelsquasi-Fermi potentialsstationary continuity equations

Mathematics Subject Classification ID

Nonlinear boundary value problems for linear elliptic equations (35J65) Stability and convergence of numerical methods for boundary value problems involving PDEs (65N12) Motion of charged particles (78A35) Applications to the sciences (65Z05)

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Cites work

• scientific article; zbMATH DE number 3844984 (Why is no real title available?)
• Theory of the flow of electrons and holes in Germanium and other semiconductors

Cited in

(19)

• Current density and continuity in discretized models
• On the inclusion of the recombination term in discretizations of the semiconductor device equations
• scientific article; zbMATH DE number 3883568 (Why is no real title available?)
• ANALYSIS OF A DISCRETIZATION ALGORITHM FOR STATIONARY EQUATIONS IN SEMICONDUCTOR DEVICE MODELS, III
• ANALYSIS OF A DISCRETIZATION ALGORITHM FOR TIME‐DEPENDENT SEMICONDUCTOR MODELS
• Convergence analysis of a partial differential algebraic system from coupling a semiconductor model to a circuit model
• Computational and analytical comparison of flux discretizations for the semiconductor device equations beyond Boltzmann statistics
• Computation of Current-Voltage Characteristics in a Semiconductor Device using Arc-length Continuation
• Semiconductor device modelling from the numerical point of view
• DELAUNAY PARTITIONING IN THREE DIMENSIONS AND SEMICONDUCTOR MODELS
• A SCALING METHOD IN THE NUMERICAL ANALYSIS SOLUTION OF THE CURRENT CONTINUITY EQUATIONS IN SEMICONDUCTOR ANALYSIS
• Hexahedral finite elements for the stationary semiconductor device equations
• Three-dimensional exponentially fitted conforming tetrahedral finite elements for the semiconductor continuity equations
• MIXED FINITE ELEMENT SIMULATION OF HETEROJUNCTION STRUCTURES INCLUDING A BOUNDARY LAYER MODEL FOR THE QUASI‐FERMI LEVELS
• An analysis of the Scharfetter-Gummel box method for the stationary semiconductor device equations
• Mapped discretization strategies for curvilinear adaptively redistributed grids in semiconductor device modeling
• On a Petrov-Galerkin method for the electrical and thermal behaviour of semiconductor devices in two dimensions
• ANALYSIS OF A DISCRETIZATION ALGORITHM FOR STATIONARY CONTINUITY EQUATIONS IN SEMICONDUCTOR DEVICE MODELS, II
• A triangular mixed finite element method for the stationary semiconductor device equations

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