ANALYSIS OF A DISCRETIZATION ALGORITHM FOR STATIONARY CONTINUITY EQUATIONS IN SEMICONDUCTOR DEVICE MODELS
DOI10.1108/EB009979zbMATH Open0619.65116OpenAlexW4230421617MaRDI QIDQ3756463FDOQ3756463
Publication date: 1983
Published in: COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1108/eb009979
mesh refinementmesh generationelectrostatic potentialsemiconductor device modelsquasi-Fermi potentialsstationary continuity equations
Nonlinear boundary value problems for linear elliptic equations (35J65) Stability and convergence of numerical methods for boundary value problems involving PDEs (65N12) Motion of charged particles (78A35) Applications to the sciences (65Z05)
Cites Work
Cited In (14)
- On a Petrov-Galerkin method for the electrical and thermal behaviour of semiconductor devices in two dimensions
- MIXED FINITE ELEMENT SIMULATION OF HETEROJUNCTION STRUCTURES INCLUDING A BOUNDARY LAYER MODEL FOR THE QUASI‐FERMI LEVELS
- ANALYSIS OF A DISCRETIZATION ALGORITHM FOR STATIONARY CONTINUITY EQUATIONS IN SEMICONDUCTOR DEVICE MODELS, II
- Hexahedral finite elements for the stationary semiconductor device equations
- ANALYSIS OF A DISCRETIZATION ALGORITHM FOR TIME‐DEPENDENT SEMICONDUCTOR MODELS
- Convergence analysis of a partial differential algebraic system from coupling a semiconductor model to a circuit model
- An analysis of the Scharfetter-Gummel box method for the stationary semiconductor device equations
- Computational and analytical comparison of flux discretizations for the semiconductor device equations beyond Boltzmann statistics
- On the inclusion of the recombination term in discretizations of the semiconductor device equations
- DELAUNAY PARTITIONING IN THREE DIMENSIONS AND SEMICONDUCTOR MODELS
- A triangular mixed finite element method for the stationary semiconductor device equations
- Mapped discretization strategies for curvilinear adaptively redistributed grids in semiconductor device modeling
- ANALYSIS OF A DISCRETIZATION ALGORITHM FOR STATIONARY EQUATIONS IN SEMICONDUCTOR DEVICE MODELS, III
- Three-dimensional exponentially fitted conforming tetrahedral finite elements for the semiconductor continuity equations
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