ANALYSIS OF A DISCRETIZATION ALGORITHM FOR STATIONARY EQUATIONS IN SEMICONDUCTOR DEVICE MODELS, III

DOI10.1108/EB009995MaRDI QIDQ3756465zbMATHOpenAlexFDO

Authors M. S. Mock

Publication date 1984

Published in COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1108/eb009995

zbMATH Keywords

convergencefinite element methodelectrostatic potentialScharfetter-Gummel methodsemiconductor device model

Mathematics Subject Classification ID

Nonlinear boundary value problems for linear elliptic equations (35J65) Finite element, Rayleigh-Ritz and Galerkin methods for boundary value problems involving PDEs (65N30) Motion of charged particles (78A35) Applications to the sciences (65Z05)

Recommendations

• ANALYSIS OF A DISCRETIZATION ALGORITHM FOR STATIONARY CONTINUITY EQUATIONS IN SEMICONDUCTOR DEVICE MODELS, II
• ANALYSIS OF A DISCRETIZATION ALGORITHM FOR STATIONARY CONTINUITY EQUATIONS IN SEMICONDUCTOR DEVICE MODELS
• Finite Element Solution of the Fundamental Equations of Semiconductor Devices. I
• scientific article; zbMATH DE number 3883568
• ANALYSIS OF A DISCRETIZATION ALGORITHM FOR TIME‐DEPENDENT SEMICONDUCTOR MODELS

Cites work

• scientific article; zbMATH DE number 3844984 (Why is no real title available?)
• ANALYSIS OF A DISCRETIZATION ALGORITHM FOR STATIONARY CONTINUITY EQUATIONS IN SEMICONDUCTOR DEVICE MODELS
• ANALYSIS OF A DISCRETIZATION ALGORITHM FOR STATIONARY CONTINUITY EQUATIONS IN SEMICONDUCTOR DEVICE MODELS, II
• Theory of the flow of electrons and holes in Germanium and other semiconductors

Cited in

(14)

• scientific article; zbMATH DE number 3883568 (Why is no real title available?)
• ANALYSIS OF A DISCRETIZATION ALGORITHM FOR TIME‐DEPENDENT SEMICONDUCTOR MODELS
• Semiconductor device modelling from the numerical point of view
• DELAUNAY PARTITIONING IN THREE DIMENSIONS AND SEMICONDUCTOR MODELS
• Hexahedral finite elements for the stationary semiconductor device equations
• Analysis of the SG discretizatioin scheme on a multi-dimensional domain — application to impact ionization
• AN EXTENDED SCHARFETTER‐GUMMEL SCHEME FOR HIGH ORDER MOMENT EQUATIONS
• MIXED FINITE ELEMENT SIMULATION OF HETEROJUNCTION STRUCTURES INCLUDING A BOUNDARY LAYER MODEL FOR THE QUASI‐FERMI LEVELS
• An analysis of the Scharfetter-Gummel box method for the stationary semiconductor device equations
• Mapped discretization strategies for curvilinear adaptively redistributed grids in semiconductor device modeling
• ANALYSIS OF A DISCRETIZATION ALGORITHM FOR STATIONARY CONTINUITY EQUATIONS IN SEMICONDUCTOR DEVICE MODELS
• ANALYSIS OF A DISCRETIZATION ALGORITHM FOR STATIONARY CONTINUITY EQUATIONS IN SEMICONDUCTOR DEVICE MODELS, II
• Inverse-Average-Type Finite Element Discretizations of Selfadjoint Second-Order Elliptic Problems
• Finite element approximation of electrostatic potential in one dimensional multilayer structures with quantized electronic charge

This page was built for publication: ANALYSIS OF A DISCRETIZATION ALGORITHM FOR STATIONARY EQUATIONS IN SEMICONDUCTOR DEVICE MODELS, III

Report a bug (only for logged in users!)Click here to report a bug for this page (MaRDI item Q3756465)