ANALYSIS OF A DISCRETIZATION ALGORITHM FOR STATIONARY EQUATIONS IN SEMICONDUCTOR DEVICE MODELS, III

DOI10.1108/EB009995zbMATH Open0619.65118OpenAlexW2041238515MaRDI QIDQ3756465FDOQ3756465

Authors: M. S. Mock 

Publication date: 1984

Published in: COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1108/eb009995

Recommendations

• ANALYSIS OF A DISCRETIZATION ALGORITHM FOR STATIONARY CONTINUITY EQUATIONS IN SEMICONDUCTOR DEVICE MODELS, II
• ANALYSIS OF A DISCRETIZATION ALGORITHM FOR STATIONARY CONTINUITY EQUATIONS IN SEMICONDUCTOR DEVICE MODELS
• Finite Element Solution of the Fundamental Equations of Semiconductor Devices. I
• scientific article; zbMATH DE number 3883568
• ANALYSIS OF A DISCRETIZATION ALGORITHM FOR TIME‐DEPENDENT SEMICONDUCTOR MODELS

zbMATH Keywords

convergencefinite element methodelectrostatic potentialScharfetter-Gummel methodsemiconductor device model

Mathematics Subject Classification ID

Nonlinear boundary value problems for linear elliptic equations (35J65) Finite element, Rayleigh-Ritz and Galerkin methods for boundary value problems involving PDEs (65N30) Motion of charged particles (78A35) Applications to the sciences (65Z05)

Cites Work

• Theory of the flow of electrons and holes in Germanium and other semiconductors
• Title not available (Why is that?)
• ANALYSIS OF A DISCRETIZATION ALGORITHM FOR STATIONARY CONTINUITY EQUATIONS IN SEMICONDUCTOR DEVICE MODELS
• ANALYSIS OF A DISCRETIZATION ALGORITHM FOR STATIONARY CONTINUITY EQUATIONS IN SEMICONDUCTOR DEVICE MODELS, II

Cited In (14)

• Inverse-Average-Type Finite Element Discretizations of Selfadjoint Second-Order Elliptic Problems
• MIXED FINITE ELEMENT SIMULATION OF HETEROJUNCTION STRUCTURES INCLUDING A BOUNDARY LAYER MODEL FOR THE QUASI‐FERMI LEVELS
• ANALYSIS OF A DISCRETIZATION ALGORITHM FOR STATIONARY CONTINUITY EQUATIONS IN SEMICONDUCTOR DEVICE MODELS
• ANALYSIS OF A DISCRETIZATION ALGORITHM FOR STATIONARY CONTINUITY EQUATIONS IN SEMICONDUCTOR DEVICE MODELS, II
• Hexahedral finite elements for the stationary semiconductor device equations
• ANALYSIS OF A DISCRETIZATION ALGORITHM FOR TIME‐DEPENDENT SEMICONDUCTOR MODELS
• Analysis of the SG discretizatioin scheme on a multi-dimensional domain — application to impact ionization
• Title not available (Why is that?)
• An analysis of the Scharfetter-Gummel box method for the stationary semiconductor device equations
• DELAUNAY PARTITIONING IN THREE DIMENSIONS AND SEMICONDUCTOR MODELS
• Finite element approximation of electrostatic potential in one dimensional multilayer structures with quantized electronic charge
• Mapped discretization strategies for curvilinear adaptively redistributed grids in semiconductor device modeling
• Semiconductor device modelling from the numerical point of view
• AN EXTENDED SCHARFETTER‐GUMMEL SCHEME FOR HIGH ORDER MOMENT EQUATIONS

This page was built for publication: ANALYSIS OF A DISCRETIZATION ALGORITHM FOR STATIONARY EQUATIONS IN SEMICONDUCTOR DEVICE MODELS, III

Report a bug (only for logged in users!)Click here to report a bug for this page (MaRDI item Q3756465)