ANALYSIS OF A DISCRETIZATION ALGORITHM FOR STATIONARY EQUATIONS IN SEMICONDUCTOR DEVICE MODELS, III
DOI10.1108/EB009995zbMATH Open0619.65118OpenAlexW2041238515MaRDI QIDQ3756465FDOQ3756465
Publication date: 1984
Published in: COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1108/eb009995
convergencefinite element methodelectrostatic potentialScharfetter-Gummel methodsemiconductor device model
Nonlinear boundary value problems for linear elliptic equations (35J65) Finite element, Rayleigh-Ritz and Galerkin methods for boundary value problems involving PDEs (65N30) Motion of charged particles (78A35) Applications to the sciences (65Z05)
Cites Work
- Theory of the Flow of Electrons and Holes in Germanium and Other Semiconductors
- Title not available (Why is that?)
- ANALYSIS OF A DISCRETIZATION ALGORITHM FOR STATIONARY CONTINUITY EQUATIONS IN SEMICONDUCTOR DEVICE MODELS
- ANALYSIS OF A DISCRETIZATION ALGORITHM FOR STATIONARY CONTINUITY EQUATIONS IN SEMICONDUCTOR DEVICE MODELS, II
Cited In (9)
- Inverse-Average-Type Finite Element Discretizations of Selfadjoint Second-Order Elliptic Problems
- MIXED FINITE ELEMENT SIMULATION OF HETEROJUNCTION STRUCTURES INCLUDING A BOUNDARY LAYER MODEL FOR THE QUASI‐FERMI LEVELS
- Hexahedral finite elements for the stationary semiconductor device equations
- Analysis of the SG discretizatioin scheme on a multi-dimensional domain — application to impact ionization
- An analysis of the Scharfetter-Gummel box method for the stationary semiconductor device equations
- DELAUNAY PARTITIONING IN THREE DIMENSIONS AND SEMICONDUCTOR MODELS
- Mapped discretization strategies for curvilinear adaptively redistributed grids in semiconductor device modeling
- Semiconductor device modelling from the numerical point of view
- AN EXTENDED SCHARFETTER‐GUMMEL SCHEME FOR HIGH ORDER MOMENT EQUATIONS
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