Semiconductor device modelling from the numerical point of view
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Publication:4728191
Newton's methodcontraction mapping principlecontinuity equationselectrostatic potentialsemiconductor device modellingbipolar transistornon-linear Poisson equationresurf device
Technical applications of optics and electromagnetic theory (78A55) Electro- and magnetostatics (78A30) Partial differential equations of mathematical physics and other areas of application (35Q99) Numerical solution of discretized equations for boundary value problems involving PDEs (65N22) Applications to the sciences (65Z05)
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