Semiconductor device modelling from the numerical point of view
From MaRDI portal
Publication:4728191
DOI10.1002/NME.1620240408zbMATH Open0618.65125OpenAlexW2099105561MaRDI QIDQ4728191FDOQ4728191
Authors: Simon J. Polak, Cor Den Heijer, W. H. A. Schilders 
Publication date: 1987
Published in: International Journal for Numerical Methods in Engineering (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1002/nme.1620240408
Recommendations
- scientific article; zbMATH DE number 3844984
- scientific article; zbMATH DE number 3883568
- Simulation of the Transient Behavior of a One-Dimensional Semiconductor Device II
- ANALYSIS OF A DISCRETIZATION ALGORITHM FOR STATIONARY CONTINUITY EQUATIONS IN SEMICONDUCTOR DEVICE MODELS
- scientific article; zbMATH DE number 4110040
Newton's methodcontraction mapping principlecontinuity equationselectrostatic potentialsemiconductor device modellingbipolar transistornon-linear Poisson equationresurf device
Technical applications of optics and electromagnetic theory (78A55) Electro- and magnetostatics (78A30) Partial differential equations of mathematical physics and other areas of application (35Q99) Numerical solution of discretized equations for boundary value problems involving PDEs (65N22) Applications to the sciences (65Z05)
Cites Work
- CGS
- Title not available (Why is that?)
- Title not available (Why is that?)
- Title not available (Why is that?)
- Title not available (Why is that?)
- Title not available (Why is that?)
- Title not available (Why is that?)
- Title not available (Why is that?)
- ANALYSIS OF A DISCRETIZATION ALGORITHM FOR STATIONARY CONTINUITY EQUATIONS IN SEMICONDUCTOR DEVICE MODELS, II
- ANALYSIS OF A DISCRETIZATION ALGORITHM FOR STATIONARY EQUATIONS IN SEMICONDUCTOR DEVICE MODELS, III
- A QUALITATIVE ANALYSIS OF THE FUNDAMENTAL SEMICONDUCTOR DEVICE EQUATIONS
- Title not available (Why is that?)
Cited In (61)
- Acceleration of solving drift-diffusion equations enabled by estimation of initial value at nonequilibrium
- THE INCLUSION OF A FINITE CAPTURE TIME IN NUMERICAL DEVICE SIMULATION
- An \(\varepsilon \)-uniformly convergent method for singularly perturbed parabolic problems exhibiting boundary layers
- Less Emphasis on Hard Regions: Curriculum Learning of PINNs for Singularly Perturbed Convection-Diffusion-Reaction Problems
- A variable stepsize hybrid block optimized technique for integrating a class of singularly perturbed parabolic problems
- A QUANTUM TRANSMITTING SCHRÖDINGER–POISSON SYSTEM
- Title not available (Why is that?)
- Derivation of a quasi-linear second-order elliptic-parabolic model for the efficiency of silicon solar cells
- A physics-based strategy for choosing initial iterate for solving drift-diffusion equations
- Semiconductor device design using the \textsc{BiMADS} algorithm
- The Midpoint Upwind Finite Difference Scheme for Time-Dependent Singularly Perturbed Convection-Diffusion Equations on Non-Uniform Mesh
- Title not available (Why is that?)
- MIXED FINITE ELEMENT SIMULATION OF HETEROJUNCTION STRUCTURES INCLUDING A BOUNDARY LAYER MODEL FOR THE QUASI‐FERMI LEVELS
- Moore's law and numerical modeling
- Numerical modeling of varizone semiconductor devices
- Enriched residual free bubbles for semiconductor device simulation
- A uniformly convergent B-spline collocation method on a nonuniform mesh for singularly perturbed one-dimensional time-dependent linear convection-diffusion problem
- Numerical solution of singularly perturbed convection-diffusion problem using parameter uniform B-spline collocation method
- Mathematical and Numerical Modelling of Heterostructure Semiconductor Devices: From Theory to Programming
- A brief survey on numerical methods for solving singularly perturbed problems
- On the composite discontinuous Galerkin method for simulations of electric properties of semiconductor devices
- Adaptive multigrid applied to a bipolar transistor problem
- Strategies for mesh-handling and model specification within a highly flexible simulation framework
- Title not available (Why is that?)
- Hexahedral finite elements for the stationary semiconductor device equations
- A numerical study on Neumann-Neumann and FETI methods for \(hp\) approximations on geometrically refined boundary layer meshes in two dimensions.
- The numerical simulation of the p-n barrier capacity in semiconductor device structures
- Preconditioned CG-type methods for solving the coupled system of fundamental semiconductor equations
- Title not available (Why is that?)
- Crank–Nicolson finite difference method based on a midpoint upwind scheme on a non-uniform mesh for time-dependent singularly perturbed convection–diffusion equations
- Title not available (Why is that?)
- Numerical solutions of singularly perturbed one-dimensional parabolic convection-diffusion problems by the Bessel collocation method
- Massively parallel methods for semiconductor device modelling
- AN EXPONENTIAL FITTING SCHEME FOR THE ELECTROTHERMAL DEVICE EQUATIONS SPECIFICALLY FOR THE SIMULATION OF AVALANCHE GENERATION
- Domain decomposition technique for the continuity equations of semiconductor device models
- Second-order parameter-uniform finite difference scheme for singularly perturbed parabolic problem with a boundary turning point
- Title not available (Why is that?)
- Title not available (Why is that?)
- Simulation of visible and ultra-violet group-III nitride light emitting diodes
- Numerical simulation of semiconductor devices
- Generalized conjugate gradient squared
- Numerical modelling of equilibrium charge separation in poled devices
- Convexity of trace functionals and Schrödinger operators
- A nonlinear multigrid method for one-dimensional semiconductor device simulation: Results for the diode
- ON THE STABILITY OF TIME DISCRETISATIONS FOR THE SEMICONDUCTOR EQUATIONS
- Finite element methods for convection-diffusion problems using exponential splines on triangles
- Robust higher order finite difference scheme for singularly perturbed turning point problem with two outflow boundary layers
- Title not available (Why is that?)
- Static and dynamic numerical device modeling for transient circuit simulation
- An efficient numerical technique for two-parameter singularly perturbed problems having discontinuity in convection coefficient and source term
- A new viewpoint on mixed elements
- A uniformly convergent quadratic \(B\)-spline based scheme for singularly perturbed degenerate parabolic problems
- Title not available (Why is that?)
- Title not available (Why is that?)
- Finite element approximation of electrostatic potential in one dimensional multilayer structures with quantized electronic charge
- On the numerical solution of the three-dimensional semiconductor device equations on vector-concurrent computers
- ADVANCED NUMERICAL TECHNIQUES IN SEMICONDUCTOR DEVICE SIMULATION
- A new upwind difference analysis of an exponentially graded Bakhvalov-type mesh for singularly perturbed elliptic convection-diffusion problems
- Title not available (Why is that?)
- Electro-thermo-chemical computational models for 3D heterogeneous semiconductor device simulation
- Collocation method using artificial viscosity for solving stiff singularly perturbed turning point problem having twin boundary layers
Uses Software
This page was built for publication: Semiconductor device modelling from the numerical point of view
Report a bug (only for logged in users!)Click here to report a bug for this page (MaRDI item Q4728191)
